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CAT28F020HRA-90T

Onsemi

CAT28F020HRA-90T by Onsemi

CAT28F020HRA-90T by Onsemi is a 256Kx8 NOR flash memory with 2097152-bit density. It operates at 5V, has a programming voltage of 12V, and offers fast access time of 90ns. Ideal for industrial applications requiring high endurance with 100000 write/erase cycles.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

< 1k

Distributors (In-Stock)

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Digiode

USA . 247 parts In-Stock

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Vyrian

USA . 80 parts In-Stock

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80

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Distributors (Availability)

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Native Components

USA . 867 parts In-Stock

1+ parts

$0.075

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$0.072

867

$0.075

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$0.072

Northwest PG Solutions

USA . 1,862 parts In-Stock

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$0.083

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$0.073

1,862

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$0.073

Problanco Electronics

Mexico . 5,931 parts In-Stock

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TANS Electronics

Latvia . 4,975 parts In-Stock

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Kulean Microsystems

USA . 4,318 parts In-Stock

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Corphita

USA . 1,292 parts In-Stock

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1,292

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SupplyDigital Components

Austria . 479 parts In-Stock

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Corohmni

South Africa . 314 parts In-Stock

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UHIMA Technologies

Türkiye . 5 parts In-Stock

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Overview

Discover the Onsemi CAT28F020HRA-90T Flash Memory, a top-of-the-line product designed for reliability and performance. With Onsemi's reputation for quality craftsmanship and cutting-edge technology, this flash memory is perfect for a wide range of applications. Experience fast access times, high endurance, and seamless operation with this innovative product. Trust in the value and benefits that Onsemi provides, and elevate your projects to new heights with the CAT28F020HRA-90T.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material used for the package body provides durability and protection for the flash memory, making it suitable for various environments.

Surface Mount: YES

Being surface mount compatible allows for easy and efficient integration into circuit boards, saving space and simplifying assembly processes.

Nominal Supply Voltage / Vsup (V): 5

The nominal supply voltage of 5V ensures compatibility with standard power systems, making it easy to use in a range of applications.

Operating Mode: ASYNCHRONOUS

The asynchronous operating mode allows for efficient and independent operation, enhancing performance and flexibility in data access.

Memory Density: 2,097,152 bits

With a high memory density, this flash memory can store a large amount of data, making it suitable for applications requiring extensive storage capabilities.

Endurance: 100,000 Write/Erase Cycles

The high endurance rating of 100,000 write/erase cycles ensures longevity and reliability for frequent data read/write operations.

Technical Specifications

Flash Memory CAT28F020HRA-90T attributes and parameters. Explore more Flash Memory devices from Onsemi

Specs

Maximum Access Time:

90 ns

Command User Interface:

YES

Data Polling:

NO

Endurance:

100000 Write/Erase Cycles

JESD-30 Code:

R-PDSO-G32

JESD-609 Code:

e3

Length:

20 mm

Memory Density:

2097152 bit

Memory IC Type:

Memory Width:

8

No. of Functions:

1

No. of Terminals:

32

No. of Words:

262144 words

No. of Words Code:

256K

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

105 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

256KX8

Package Body Material:

PLASTIC/EPOXY

Package Code:

SOP

Package Equivalence Code:

TSSOP32,.8,20

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Parallel or Serial:

PARALLEL

Peak Reflow Temperature (C):

NOT SPECIFIED

Power Supplies (V):

5

Programming Voltage (V):

12

Qualification:

Not Qualified

Reverse Pinout:

YES

Maximum Seated Height:

1.2 mm

Maximum Standby Current:

.0001 Amp

Sub-Category:

Flash Memories

Maximum Supply Current:

30 mA

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

4.75 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

GULL WING

Terminal Pitch:

.5 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Toggle Bit:

NO

Type:

NOR TYPE

Width:

8 mm

Trade Compliance

CAT28F020HRA-90T Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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