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BCW33LT3G

Onsemi

BCW33LT3G by Onsemi

BCW33LT3G by Onsemi is a NPN BJT transistor with 420 min hFE, 32V VCEO, and 0.1A IC. Ideal for switching applications, it comes in a small outline package with Gull Wing terminals. With a max operating temperature of 150 °C, it is suitable for various electronic devices requiring low power dissipation.

Median Price

$0.023

Lifecycle Status

Suppliers In-Stock

13

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Mouser Electronics

USA . 19,348 parts In-Stock

1+ parts

$0.170

100+ parts

$0.065

1k+ parts

$0.037

10k+ parts

$0.027

19,348

$0.170

$0.065

$0.037

$0.027

DigiKey

USA . 26,209 parts In-Stock

1+ parts

$0.180

100+ parts

$0.068

1k+ parts

$0.043

10k+ parts

$0.028

26,209

$0.180

$0.068

$0.043

$0.028

Rochester

USA . 800,000 parts In-Stock

1+ parts

-

100+ parts

$0.023

1k+ parts

$0.019

10k+ parts

$0.017

800,000

-

$0.023

$0.019

$0.017

Verical

USA . 760,000 parts In-Stock

1+ parts

-

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760,000

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Flip Electronics (Authorized)

USA . 60,000 parts In-Stock

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60,000

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Arrow

USA . 10,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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10k+ parts

$0.015

10,000

-

-

-

$0.015

Chip1Stop

Japan . 10,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.021

10,000

-

-

-

$0.021

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 1,729 parts In-Stock

1+ parts

$0.015

100+ parts

-

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-

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1,729

$0.015

-

-

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Digiode

USA . 1,551 parts In-Stock

1+ parts

$0.024

100+ parts

-

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-

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-

1,551

$0.024

-

-

-

TME

Poland . 64 parts In-Stock

1+ parts

$0.160

100+ parts

$0.051

1k+ parts

$0.035

10k+ parts

$0.026

64

$0.160

$0.051

$0.035

$0.026

Flip Electronics

USA . 180,000 parts In-Stock

1+ parts

-

100+ parts

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180,000

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NAC Semi

USA . 170,000 parts In-Stock

1+ parts

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$0.025

170,000

-

-

-

$0.025

ComSIT Distribution GmbH

Germany . 12,452 parts In-Stock

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12,452

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corohmni

South Africa . 148 parts In-Stock

1+ parts

$0.015

100+ parts

-

1k+ parts

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10k+ parts

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148

$0.015

-

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Ampacity Inc.

Singapore . 289,615 parts In-Stock

1+ parts

$0.018

100+ parts

-

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289,615

$0.018

-

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Corphita

USA . 861 parts In-Stock

1+ parts

$0.022

100+ parts

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861

$0.022

-

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Continental Prestige Electronics

USA . 790,000 parts In-Stock

1+ parts

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$0.022

790,000

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$0.022

Perfect Parts

USA . 179,200 parts In-Stock

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179,200

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GreenTree Electronics

Israel . 60,000 parts In-Stock

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60,000

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Eastek

USA . 50,000 parts In-Stock

1+ parts

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$0.025

50,000

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$0.025

QUARKTWIN TECHNOLOGY LTD

USA . 17,856 parts In-Stock

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17,856

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Glotronic Ltd.

UK . 8,000 parts In-Stock

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8,000

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Problanco Electronics

Mexico . 7,387 parts In-Stock

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7,387

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SupplyDigital Components

Austria . 5,946 parts In-Stock

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5,946

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TANS Electronics

Latvia . 5,633 parts In-Stock

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5,633

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Kulean Microsystems

USA . 4,933 parts In-Stock

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4,933

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UHIMA Technologies

Türkiye . 845 parts In-Stock

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845

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Northwest PG Solutions

USA . 461 parts In-Stock

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461

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Native Components

USA . 234 parts In-Stock

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234

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Overview

Discover the BCW33LT3G by Onsemi, a high-quality Small Signal Bipolar Junction Transistor perfect for switching applications. Manufactured by Onsemi, this NPN transistor offers reliable performance and versatility in a compact package. With a maximum power dissipation of 0.3W and a maximum collector-emitter voltage of 32V, this transistor is ideal for a wide range of electronic projects. Upgrade your designs with the BCW33LT3G and experience the superior quality and efficiency that Onsemi products have to offer.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy body material makes this transistor lightweight and durable, making it ideal for applications where weight and reliability are important.

Polarity or Channel Type: NPN

The NPN polarity allows for easy integration into NPN transistor circuits, making this transistor versatile and compatible with a wide range of applications.

Configuration: SINGLE

The single configuration simplifies circuit design and offers ease of implementation, making this transistor a convenient choice for various switching applications.

Transistor Application: SWITCHING

Designed specifically for switching applications, this transistor ensures high performance and efficiency in controlling electronic signals.

Surface Mount: YES

The surface mount feature enables easy and secure mounting on printed circuit boards, saving space and facilitating automated assembly processes.

Package Shape: RECTANGULAR

The rectangular package shape allows for efficient placement on PCBs and ensures a compact design, making it suitable for space-constrained applications.

Terminal Form: GULL WING

The gull wing terminal form provides reliable connections and facilitates soldering processes, ensuring a secure and stable electrical connection.

Maximum Power Dissipation (Abs): 0.3W

With a maximum power dissipation of 0.3W, this transistor can handle moderate power levels, making it suitable for low to medium power applications.

Package Style (Meter): SMALL OUTLINE

The small outline package style minimizes the footprint on the PCB, while providing efficient heat dissipation, making it suitable for compact electronic designs.

Minimum DC Current Gain (hFE): 420

The high minimum DC current gain ensures reliable amplification of signals, making this transistor ideal for applications requiring stable and consistent performance.

Maximum Operating Temperature: 150 °C

With a maximum operating temperature of 150 °C, this transistor can withstand high-temperature environments, ensuring reliability in harsh conditions.

Maximum Collector-Emitter Voltage: 32V

The high collector-emitter voltage rating of 32V allows for safe operation in circuits with varying voltage levels, making this transistor versatile and compatible with a wide range of applications.

Transistor Element Material: SILICON

The use of silicon as the transistor element material ensures high performance, reliability, and durability, making this transistor a dependable choice for electronic circuits.

Maximum Collector Current (IC): 0.1A

With a maximum collector current of 0.1A, this transistor can handle moderate current levels, making it suitable for low-power switching applications.

Terminal Finish: Matte Tin (Sn) - annealed

The matte tin terminal finish provides corrosion resistance and ensures reliable electrical connections, making this transistor suitable for long-term use in various environmental conditions.

Terminal Position: DUAL

The dual terminal position allows for easy installation and secure connections on the PCB, ensuring stable and reliable performance in electronic circuits.

Maximum Time At Peak Reflow Temperature (s): 40

With a maximum time of 40 seconds at peak reflow temperature, this transistor can withstand the soldering process, ensuring efficient and reliable assembly on the PCB.

Peak Reflow Temperature °C: 260

The peak reflow temperature of 260 °C ensures proper soldering and mounting on the PCB, making this transistor suitable for automated assembly processes.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) BCW33LT3G attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

32 V

Configuration:

Minimum DC Current Gain (hFE):

420

JEDEC-95 Code:

TO-236AB

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

Matte Tin (Sn) - annealed

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

40

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

BCW33LT3G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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