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BCW32LT1

Onsemi

BCW32LT1 by Onsemi

BCW32LT1 by Onsemi is a NPN BJT transistor with 3 terminals, max. power dissipation of 0.225W, and min. DC current gain of 200. It is used in applications requiring small outline package style, operating at up to 150 °C, and with a max. collector-emitter voltage of 32V.

Median Price

$0.032

Lifecycle Status

Suppliers In-Stock

14

In-Stock Inventory

1k+

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Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Chip1Stop

Japan . 5,773 parts In-Stock

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$1.050

100+ parts

$0.079

1k+ parts

$0.058

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5,773

$1.050

$0.079

$0.058

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Rochester

USA . 423,000 parts In-Stock

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-

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$0.030

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$0.025

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$0.023

423,000

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$0.030

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$0.023

Verical

USA . 393,000 parts In-Stock

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$0.032

393,000

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$0.032

Distributors (In-Stock)

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Digiode

USA . 2,380 parts In-Stock

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$0.024

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2,380

$0.024

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Vyrian

USA . 1,791 parts In-Stock

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$0.025

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1,791

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DigiKey Marketplace

USA . 423,000 parts In-Stock

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423,000

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MISTER SPROCKETS

USA . 39,000 parts In-Stock

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Bristol Electronics

USA . 15,418 parts In-Stock

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Whistler Technology

UK . 6,000 parts In-Stock

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R&J Components

USA . 4,292 parts In-Stock

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4,292

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Mil-Aero Solutions, Inc.

USA . 3,000 parts In-Stock

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EMSNET

USA . 2,209 parts In-Stock

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Kronex Distribution GmbH

USA . 2,185 parts In-Stock

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ComSIT Distribution GmbH

Germany . 1,000 parts In-Stock

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1,000

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Distributors (Availability)

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Corphita

USA . 2,232 parts In-Stock

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$0.022

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2,232

$0.022

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Corohmni

South Africa . 251 parts In-Stock

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$0.025

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251

$0.025

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Component Stockers USA

USA . 410,999 parts In-Stock

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$0.030

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$0.020

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$0.020

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$0.020

410,999

$0.030

$0.020

$0.020

$0.020

Continental Prestige Electronics

USA . 423,000 parts In-Stock

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$0.020

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Perfect Parts

USA . 127,680 parts In-Stock

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127,680

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Cyclops Electronics Ltd (Excess)

UK . 57,720 parts In-Stock

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Kepictronics

USA . 42,000 parts In-Stock

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ChipTracer

USA . 15,418 parts In-Stock

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TANS Electronics

Latvia . 8,340 parts In-Stock

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Authorized Procurement Solutions

USA . 5,773 parts In-Stock

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GreenTree Electronics

Israel . 5,773 parts In-Stock

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Problanco Electronics

Mexico . 5,656 parts In-Stock

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SupplyDigital Components

Austria . 4,382 parts In-Stock

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Kulean Microsystems

USA . 3,426 parts In-Stock

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A-Z Elektronik GmbH

Germany . 1,674 parts In-Stock

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Alle Elektronik GmbH

Germany . 1,116 parts In-Stock

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UHIMA Technologies

Türkiye . 675 parts In-Stock

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675

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Native Components

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380

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Northwest PG Solutions

USA . 189 parts In-Stock

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Overview

Enhance your electronic projects with the BCW32LT1 by Onsemi, a top-quality Small Signal Bipolar Junction Transistor. Manufactured by the trusted brand Onsemi, this NPN transistor offers reliability and performance for various applications. With a maximum collector-emitter voltage of 32V and a minimum DC current gain of 200, this transistor provides efficient power dissipation and high operating temperatures. Trust in Onsemi's expertise and choose the BCW32LT1 for your next project to experience unparalleled value and exceptional results.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides good protection for the transistor, making it suitable for a wide range of applications.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification circuits, making this product versatile for signal processing.

Configuration: SINGLE

SINGLE configuration simplifies circuit design and makes the transistor easy to integrate into a variety of electronic devices.

Surface Mount: YES

Surface mount capability allows for easy and secure mounting on circuit boards, saving space and facilitating automated manufacturing processes.

Package Shape: RECTANGULAR

Rectangular shape enables efficient placement on the circuit board and ensures a compact overall design.

Terminal Form: GULL WING

Gull wing terminals provide reliable electrical connection and are suitable for automated soldering processes.

Maximum Power Dissipation (Abs): 0.225 W

With a high maximum power dissipation, this transistor can handle moderate power levels without overheating.

Package Style (Meter): SMALL OUTLINE

Small outline package style saves space on the circuit board and allows for dense packing of components.

Minimum DC Current Gain (hFE): 200

A high minimum current gain ensures stable and reliable amplification performance in various applications.

Maximum Operating Temperature: 150 °C

With a high maximum operating temperature, this transistor can withstand elevated temperatures without loss of performance.

Maximum Collector-Emitter Voltage: 32 V

The high maximum collector-emitter voltage rating allows for safe operation in circuits with varying voltage levels.

Transistor Element Material: SILICON

Silicon transistors offer high performance and reliability, making them a preferred choice for many electronic applications.

Maximum Collector Current (IC): 0.1 A

This transistor can handle moderate collector currents, making it suitable for low to medium power applications.

Terminal Finish: Tin/Lead (Sn/Pb)

Tin/Lead terminal finish provides good solderability and ensures a secure connection to the circuit board.

Terminal Position: DUAL

Dual terminal position allows for flexible mounting options and compatibility with different circuit layouts.

Maximum Time At Peak Reflow Temperature (s): 30

This transistor can withstand peak reflow temperatures for a sufficient duration, ensuring reliable soldering during manufacturing.

Peak Reflow Temperature °C: 235

High peak reflow temperature capability allows for reliable soldering in lead-free and high-temperature processes.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) BCW32LT1 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

32 V

Configuration:

Minimum DC Current Gain (hFE):

200

JEDEC-95 Code:

TO-236AB

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e0

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

235

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

Tin/Lead (Sn/Pb)

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Element Material:

SILICON

Trade Compliance

BCW32LT1 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

NSN

5961-01-480-7758, 5961014807758

NIIN

014807758

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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