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BCW30

Onsemi

BCW30 by Onsemi

BCW30 by Onsemi is a PNP BJT transistor for switching applications. It has a VCEsat of 0.3V, hFE of 215, and fT of 100MHz. With a max operating temperature of 150 °C, it is ideal for small outline surface mount packages in electronic circuits.

Median Price

$0.020

Lifecycle Status

Suppliers In-Stock

34

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 8,950 parts In-Stock

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$0.020

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Distributors (In-Stock)

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ComSIT Distribution GmbH

Germany . 138,000 parts In-Stock

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ComSIT USA

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A&K Electronics

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Belgium . 16,770 parts In-Stock

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Component Sense

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PC Components Company LLC

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Digiode

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MISTER SPROCKETS

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Corel Iberica Componentes, S.L.

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Legend Electronics Inc.

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Kronex Distribution GmbH

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LIBRA Elektronik GmbH

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ACDS - Activité Composants Distribution Service

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Prism Electronics

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AZTECH Wire

Italy . 3,387 parts In-Stock

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Northwest PG Solutions

USA . 5,490 parts In-Stock

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Native Components

USA . 3,298 parts In-Stock

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IDEA Electronic Components Group

UK . 1,447 parts In-Stock

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MKK Technologies

India . 2,263 parts In-Stock

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DigiPath Technology Company

USA . 2,263 parts In-Stock

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One Stop Electronics

USA . 769 parts In-Stock

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Component Stockers USA

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Metaverse IC Inc.

Canada . 306,000 parts In-Stock

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Perfect Parts

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Cyclops Electronics Ltd (Excess)

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Kepictronics

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QUARKTWIN TECHNOLOGY LTD

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Spain . 11,052 parts In-Stock

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SupplyDigital Components

Austria . 8,270 parts In-Stock

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Kulean Microsystems

USA . 7,827 parts In-Stock

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Microchip USA

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Corphita

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Glotronic Ltd.

UK . 4,800 parts In-Stock

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UNI Independent Distributors

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Authorized Procurement Solutions

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Supply Digital

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Alle Elektronik GmbH

Germany . 1,800 parts In-Stock

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Parana Technologies

USA . 1,693 parts In-Stock

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Marpe Global Electronics

Taiwan . 1,635 parts In-Stock

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QualityLine Systems

Poland . 1,635 parts In-Stock

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XL Components Corporation

Australia . 1,635 parts In-Stock

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TANS Electronics

Latvia . 836 parts In-Stock

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Problanco Electronics

Mexico . 595 parts In-Stock

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UHIMA Technologies

Türkiye . 578 parts In-Stock

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Corohmni

South Africa . 148 parts In-Stock

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Overview

Looking for a reliable and high-quality Small Signal Bipolar Junction Transistor (BJT) for your switching applications? Look no further than the BCW30 by Onsemi. With a maximum VCEsat of only 0.3V and a minimum DC current gain of 215, this PNP transistor offers superior performance and efficiency. Its compact package shape and surface-mount capability make it versatile for a wide range of electronic projects. Trust Onsemi's reputation for excellence and innovation, and experience the value and benefits that the BCW30 can bring to your designs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy package body material provides durability and protection for the transistor, making it suitable for a variety of applications.

Polarity or Channel Type: PNP

The PNP polarity allows for easy integration into circuits where PNP transistors are required, enhancing compatibility and versatility.

Configuration: SINGLE

The single configuration simplifies circuit design and installation, making it a convenient choice for various switching applications.

Transistor Application: SWITCHING

Designed specifically for switching applications, this transistor delivers reliable performance and efficient operation in switching circuits.

Surface Mount: YES

The surface mount capability enables easy and secure mounting on PCBs, saving space and simplifying assembly processes.

Maximum VCEsat: 0.3 V

The low maximum VCEsat value ensures minimal power loss and efficient operation, making the transistor energy-efficient.

Package Shape: RECTANGULAR

The rectangular package shape allows for easy PCB layout and integration, contributing to a neat and organized circuit design.

Terminal Form: GULL WING

The gull wing terminal form provides secure solder connections and improved heat dissipation, enhancing the transistor's reliability and performance.

No. of Terminals: 3

With three terminals, this transistor offers standard functionality while remaining compact and easy to use in various circuit designs.

Maximum Power Dissipation (Abs): 0.25 W

The low maximum power dissipation value of 0.25 W indicates efficient heat management and reliable performance under varying load conditions.

Package Style (Meter): SMALL OUTLINE

The small outline package style saves space on the PCB, making it suitable for compact electronic devices and applications with limited board space.

Minimum DC Current Gain (hFE): 215

With a minimum DC current gain of 215, this transistor provides consistent and predictable amplification of current, ensuring stable performance in circuits.

Maximum Operating Temperature: 150 °C

The high maximum operating temperature of 150 °C allows for reliable operation in various environments and under different temperature conditions.

Maximum Collector-Emitter Voltage: 32 V

The high maximum collector-emitter voltage rating of 32 V ensures safe and reliable operation in applications where higher voltage handling is required.

Transistor Element Material: SILICON

Made of silicon, a common semiconductor material known for its reliability and performance, this transistor offers excellent electrical properties for optimal operation.

Maximum Collector Current (IC): 0.1 A

With a maximum collector current of 0.1 A, this transistor can handle moderate current levels, making it suitable for various switching applications.

Terminal Finish: Tin (Sn)

The tin terminal finish provides corrosion resistance and reliable solder joints, ensuring long-term performance and durability of the transistor.

Terminal Position: DUAL

The dual terminal position offers flexibility in circuit connections and layout, allowing for easy integration and compatibility with different circuit designs.

Maximum Time At Peak Reflow Temperature (s): 30

With a maximum time at peak reflow temperature of 30 seconds, this transistor is easy to solder and handle during assembly, saving time and effort.

Peak Reflow Temperature °C: 260

The high peak reflow temperature of 260 °C ensures stable solder joints and reliable connections, even under extreme heat conditions.

Nominal Transition Frequency (fT): 100 MHz

The high nominal transition frequency of 100 MHz indicates fast switching speeds and high-frequency operation, making it suitable for applications requiring rapid signal processing.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) BCW30 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

32 V

Configuration:

Minimum DC Current Gain (hFE):

215

JEDEC-95 Code:

TO-236AB

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

Tin (Sn)

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum VCEsat:

.3 V

Trade Compliance

BCW30 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

NSN

5961-99-779-8587, 5961997798587, 5961-15-143-3901, 5961151433901

NIIN

997798587, 151433901

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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