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BCW32TA

Diodes Incorporated

BCW32TA by Diodes Incorporated

BCW32TA by Diodes Inc. is a small signal NPN bipolar junction transistor (BJT) with a max collector-emitter voltage of 20V and a min DC current gain of 200. It is designed for surface mount applications and has a rectangular package with gull wing terminals. This transistor is commonly used in electronic circuits requiring low power amplification or switching functions.

Median Price

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Lifecycle Status

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3

In-Stock Inventory

1k+

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Component Sense

UK . 4,927 parts In-Stock

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Nova Conductors

Japan . 900 parts In-Stock

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900

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Vyrian

USA . 213 parts In-Stock

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213

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Aztec Data Supply Inc.

USA . 1,496 parts In-Stock

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$0.714

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Corohmni

South Africa . 71 parts In-Stock

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$0.813

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AZTECH Wire

Italy . 220 parts In-Stock

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$11.018

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Argo Parts USA

USA . 4,364 parts In-Stock

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Continental Prestige Electronics

USA . 543 parts In-Stock

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Bastille Electronics

Australia . 300 parts In-Stock

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Overview

Experience high-quality performance with the BCW32TA from Diodes Incorporated. As a leading manufacturer in the industry, Diodes Incorporated ensures that their products meet the highest standards of excellence. The BCW32TA belongs to the Small Signal Bipolar Junction Transistors category and offers numerous advantages for your electronic applications. Its NPN polarity and single configuration make it versatile for a wide range of uses. With surface mount capability and a small outline package style, this transistor is ideal for space-constrained designs. Its maximum collector-emitter voltage of 20V and maximum collector current of 0.1A guarantee reliable and efficient operation. Trust in Diodes Incorporated and enjoy the value, benefits, and advantages that the BCW32TA brings to your projects.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy as the package body material ensures durability and protection for the transistor, making it resistant to damage and suitable for a wide range of applications.

Polarity or Channel Type: NPN

The NPN polarity allows for easy integration and compatibility with other electronic components, enhancing flexibility and versatility in circuit design.

Configuration: SINGLE

The single configuration simplifies the transistor's operation and makes it straightforward to incorporate into various circuit designs.

Surface Mount: YES

The surface mount capability enables easy and efficient installation on printed circuit boards, saving valuable space and making it ideal for compact electronic devices.

Package Shape: RECTANGULAR

The rectangular shape of the package ensures convenient and secure mounting on circuit boards, providing stability and ease of assembly.

Terminal Form: GULL WING

The gull wing terminal form offers excellent soldering properties, ensuring reliable electrical connections and enhancing overall performance.

No. of Elements: 1

With only one element, this transistor simplifies circuit design and increases reliability by reducing the chances of failure.

No. of Terminals: 3

The three terminals offer easy connectivity and compatibility with existing circuitry, facilitating quick integration and efficient operation.

Package Style (Meter): SMALL OUTLINE

The small outline package style allows for space-saving installation and makes it suitable for applications with limited board space.

Minimum DC Current Gain (hFE): 200

The minimum DC current gain of 200 guarantees stable and predictable amplification performance, ensuring accurate signal processing.

Maximum Collector-Emitter Voltage: 20 V

With a maximum collector-emitter voltage of 20 V, this transistor can handle a wide range of voltage levels, making it versatile and suitable for various voltage applications.

Transistor Element Material: SILICON

The use of silicon as the transistor element material offers excellent electrical characteristics, such as low power loss and high current capability, making it an efficient choice for signal amplification.

Maximum Collector Current (IC): 0.1 A

The maximum collector current of 0.1 A ensures the transistor can handle moderate power requirements, making it suitable for a range of low to medium current applications.

Terminal Position: DUAL

The dual terminal position allows for straightforward connections, enhancing ease of use and facilitating quick installation in circuit designs.

Reference Standard: CECC

The compliance with CECC, a recognized industry standard, ensures high-quality and reliable performance, meeting stringent requirements.

Nominal Transition Frequency (fT): 300 MHz

With a nominal transition frequency of 300 MHz, this transistor can reliably handle high-frequency signals, making it ideal for applications requiring fast switching and signal processing.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) BCW32TA attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Diodes Incorporated

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

20 V

Configuration:

Minimum DC Current Gain (hFE):

200

JESD-30 Code:

R-PDSO-G3

No. of Elements:

1

No. of Terminals:

3

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

NPN

Qualification:

Not Qualified

Reference Standard:

CECC

Surface Mount:

YES

Terminal Form:

GULL WING

Terminal Position:

DUAL

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

BCW32TA Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Diodes Incorporated

Diodes Incorporated is an international leader in the design and production of high-grade application specific standard products utilized in a wide variety of industries. The company has developed cutting-edge technology that enhances the performance and reliability of components for consumer, industrial, automotive and communication applications. Established in 1959, Diodes Incorporated has been providing superior services to its customers by creating innovative solutions from their world-class manufacturing centers located around the world. Their commitment to delivering quality products extends to their selection of materials which are carefully chosen to meet the demand of both commercial and military requirements.

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Management team

Chairman and CEO

Keh-Shew Lu 

CFO

Brett R. Whitmire 

Lead Director

Angie Chen Button

Manufacturer fab locations 11

Fab name Location Fab Initiation Wafer Capacity

Fab 1

Fabrication

Fab Initiation

1987

China

Shanghai

Wafer Capacity

40,000

1987

40,000

Zizhu Fab 1

Fabrication

Fab Initiation

2013

China

Shanghai

Wafer Capacity

18,500

2013

18,500

G Fab

Fabrication

Fab Initiation

2008

UK

Greenock

Wafer Capacity

8,000

2008

8,000

Keelung Fab

Fabrication

Fab Initiation

1990

Taiwan

Keelung

Wafer Capacity

58,000

1990

58,000

Wuxi Fab

Fabrication

Fab Initiation

2004

China

Wuxi

Wafer Capacity

190,000

2004

190,000

Shanghai Fab

Fabrication

Fab Initiation

1993

China

Shanghai

Wafer Capacity

110,000

1993

110,000

G Fab

Fabrication

Fab Initiation

1970

UK

Greenock

Wafer Capacity

22,000

1970

22,000

Hsinchu Fab

Fabrication

Fab Initiation

1998

Taiwan

Hsinchu

Wafer Capacity

38,000

1998

38,000

Fab 2

Fabrication

Fab Initiation

2003

China

Shanghai

Wafer Capacity

20,000

2003

20,000

SPFAB

Fabrication

Fab Initiation

1995

USA

South Portland

Wafer Capacity

17,000

1995

17,000

N/A

Fabrication

Fab Initiation

1982

UK

Oldham

Wafer Capacity

4,000

1982

4,000

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