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BCW32

Onsemi

BCW32 by Onsemi

BCW32 by Onsemi is a NPN BJT transistor for switching applications. It has a max VCEsat of 0.25V, min hFE of 200, and max IC of 0.1A. With a package style of small outline, it operates up to 150 °C making it suitable for various electronic devices requiring low power consumption and high-speed switching capabilities.

Median Price

$2.340

Lifecycle Status

Suppliers In-Stock

31

In-Stock Inventory

1k+

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American Microsemiconductor Inc.

USA . 30,000 parts In-Stock

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$2.340

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R&J Components

USA . 28,192 parts In-Stock

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Corel Iberica Componentes, S.L.

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ABC Electronics Ltd.

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Sinequanon

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PC Components Company LLC

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Bristol Electronics

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Resion

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Manoshevitz Elec. Sales

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Digiode

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A&K Electronics

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Diverse Electronics

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Anansix

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Vyrian

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Dan-Mar Components

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Component Sense

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ECAB

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ACDS - Activité Composants Distribution Service

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Kronex Distribution GmbH

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Specialty Parts & Electronic Components, Inc. (S.P.E.C.)

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GES GmbH

Germany . 2,959 parts In-Stock

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Halfin

Belgium . 2,920 parts In-Stock

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J2 Sourcing AB

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ComSIT Distribution GmbH

Germany . 2,025 parts In-Stock

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LIBRA Elektronik GmbH

Germany . 1,899 parts In-Stock

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Fibra_Brandt Electronic GMBH

Germany . 1,730 parts In-Stock

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Microfarads

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Manotoh

Italy . 293 parts In-Stock

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Ashlea Components Ltd

UK . 150 parts In-Stock

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Prism Electronics

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Cogito LLC

Ukraine . 48 parts In-Stock

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Distributors (Availability)

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IDEA Electronic Components Group

UK . 1,051 parts In-Stock

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$1.791

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$1.612

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AZTECH Wire

Italy . 13,453 parts In-Stock

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Corohmni

South Africa . 236 parts In-Stock

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MKK Technologies

India . 1,330 parts In-Stock

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DigiPath Technology Company

USA . 1,330 parts In-Stock

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One Stop Electronics

USA . 1,368 parts In-Stock

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Ampacity Inc.

Singapore . 1,410 parts In-Stock

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Metaverse IC Inc.

Canada . 306,000 parts In-Stock

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Assy Fe

Spain . 42,378 parts In-Stock

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Kepictronics

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Cyclops Electronics Ltd (Excess)

UK . 10,722 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

USA . 7,953 parts In-Stock

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Corphita

USA . 7,707 parts In-Stock

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Montano Global Distributors

Canada . 7,492 parts In-Stock

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NIA Electronics

USA . 7,406 parts In-Stock

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Perfect Parts

USA . 7,280 parts In-Stock

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Northwest PG Solutions

USA . 6,296 parts In-Stock

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Ledger Components

France . 5,885 parts In-Stock

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LMD Electronica

Estonia . 5,417 parts In-Stock

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Speed Components Ltd (Excess)

Israel . 5,070 parts In-Stock

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Glotronic Ltd.

UK . 3,700 parts In-Stock

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LOOK Integrated Logistics

Peru . 3,455 parts In-Stock

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SupplyDigital Components

Austria . 3,436 parts In-Stock

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Problanco Electronics

Mexico . 3,038 parts In-Stock

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TANS Electronics

Latvia . 2,831 parts In-Stock

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Supply Digital

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Authorized Procurement Solutions

USA . 2,700 parts In-Stock

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Kulean Microsystems

USA . 2,611 parts In-Stock

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UNI Independent Distributors

Spain . 2,466 parts In-Stock

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Native Components

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UHIMA Technologies

Türkiye . 651 parts In-Stock

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Parana Technologies

USA . 179 parts In-Stock

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$2.142

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Overview

Experience superior performance and reliability with the BCW32 by Onsemi, a top-of-the-line Small Signal Bipolar Junction Transistor. Manufactured by the trusted brand Onsemi, this NPN transistor is perfect for switching applications. With a maximum VCEsat of 0.25V and a minimum DC current gain of 200, this product offers unmatched value and efficiency. Whether you're a hobbyist or a professional, the BCW32's high-quality construction and advanced features make it an essential component for your projects. Don't settle for anything less than the best - choose the BCW32 for all your transistor needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the internal components of the transistor.

Polarity or Channel Type: NPN

Commonly used in amplification and switching applications, making this transistor versatile.

Configuration: SINGLE

Simplifies circuit design and integration, ideal for straightforward applications.

Transistor Application: SWITCHING

Designed for efficient switching operations, ensuring reliable performance in switching circuits.

Surface Mount: YES

Enables easy installation on PCBs, saving space and simplifying assembly.

Maximum VCEsat: 0.25 V

Low saturation voltage helps minimize power losses and increase efficiency in switching applications.

Package Shape: RECTANGULAR

Facilitates easy placement and alignment on the PCB for efficient soldering.

Terminal Form: GULL WING

Provides secure anchoring and ease of soldering during assembly.

No. of Terminals: 3

Simplifies circuit connections and reduces complexity in circuit layout.

Maximum Power Dissipation (Abs): 0.25 W

Adequate power handling capability for a variety of low-power applications.

Package Style (Meter): SMALL OUTLINE

Compact size and lightweight design suitable for space-constrained applications.

Minimum DC Current Gain (hFE): 200

High DC current gain ensures reliable amplification of input signals.

Maximum Operating Temperature: 150 °C

Wide operating temperature range suitable for diverse environmental conditions.

Maximum Collector-Emitter Voltage: 32 V

Allows for safe operation within specified voltage limits.

Transistor Element Material: SILICON

Offers excellent semiconductor properties for reliable and consistent performance.

Maximum Collector Current (IC): 0.1 A

Adequate current handling capability for various low-power applications.

Terminal Finish: Tin (Sn)

Provides corrosion resistance and facilitates soldering during assembly.

Terminal Position: DUAL

Offers flexibility in circuit configurations and connections.

Maximum Time At Peak Reflow Temperature (s): 30

Ensures proper solder joint formation during assembly process.

Peak Reflow Temperature °C: 260

Suitable peak temperature for lead-free soldering process.

Nominal Transition Frequency (fT): 100 MHz

high transition frequency enables high-speed switching operations and amplification.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) BCW32 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

32 V

Configuration:

Minimum DC Current Gain (hFE):

200

JEDEC-95 Code:

TO-236AB

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

Tin (Sn)

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum VCEsat:

.25 V

Trade Compliance

BCW32 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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