Loading...

BCW33LT3

Onsemi

BCW33LT3 by Onsemi

BCW33LT3 by Onsemi is a NPN BJT transistor with 3 terminals, suitable for switching applications. It has a min hFE of 420 and can handle a max collector current of 0.1 A. With a max operating temperature of 150 °C, it is ideal for small outline packages in surface mount configurations.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

ComSIT Distribution GmbH

Germany . 53,451 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

53,451

-

-

-

-

Vyrian

USA . 1,650 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,650

-

-

-

-

Digiode

USA . 1,355 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,355

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Native Components

USA . 2 parts In-Stock

1+ parts

$0.140

100+ parts

-

1k+ parts

-

10k+ parts

$0.135

2

$0.140

-

-

$0.135

Northwest PG Solutions

USA . 1,212 parts In-Stock

1+ parts

$0.154

100+ parts

-

1k+ parts

-

10k+ parts

$0.136

1,212

$0.154

-

-

$0.136

SupplyDigital Components

Austria . 7,486 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

7,486

-

-

-

-

Kulean Microsystems

USA . 5,600 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

5,600

-

-

-

-

Problanco Electronics

Mexico . 4,468 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

4,468

-

-

-

-

TANS Electronics

Latvia . 1,254 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,254

-

-

-

-

Corphita

USA . 1,115 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,115

-

-

-

-

UHIMA Technologies

Türkiye . 945 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

945

-

-

-

-

Corohmni

South Africa . 495 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

495

-

-

-

-

Overview

Upgrade your electronic projects with the BCW33LT3 by Onsemi, a top-quality Small Signal Bipolar Junction Transistor that offers exceptional performance and reliability. Manufactured by industry leader Onsemi, this NPN transistor is perfect for switching applications. With its gull wing terminals and small outline package style, the BCW33LT3 is easy to integrate into your designs. Trust in Onsemi's reputation for excellence and choose the BCW33LT3 for superior results in your next project.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection for the transistor, making it suitable for a variety of applications.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification and switching circuits, offering reliable performance.

Configuration: SINGLE

Simplified circuit design and ease of use due to single configuration.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring efficient performance in such scenarios.

Surface Mount: YES

Easily mountable on a PCB, allowing for efficient assembly and space-saving design.

Package Shape: RECTANGULAR

Rectangular shape enables compact and organized PCB layout.

Maximum Power Dissipation (Abs): 0.225 W

Sufficient power handling capability for reliable operation within specified limits.

Minimum DC Current Gain (hFE): 420

High current gain ensures amplification of small input signals with precision.

Maximum Operating Temperature: 150 °C

Wide operating temperature range allows for use in diverse environments.

Maximum Collector-Emitter Voltage: 32 V

Suitable for applications requiring voltage handling capabilities up to 32 volts.

Maximum Collector Current (IC): 0.1 A

Able to handle collector current up to 0.1 ampere, making it suitable for low to medium current applications.

Terminal Finish: Tin/Lead (Sn/Pb)

Tin/lead finish provides good solderability and reliability in the terminal connections.

Peak Reflow Temperature °C: 235

High peak reflow temperature ensures secure and stable solder joints during assembly.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) BCW33LT3 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

32 V

Configuration:

Minimum DC Current Gain (hFE):

420

JEDEC-95 Code:

TO-236AB

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e0

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

235

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

Tin/Lead (Sn/Pb)

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

BCW33LT3 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

previous next
The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

Category top products 20

Authentic purchasing experiences

Partstack™ will investigate all reported instances of potential suspect/counterfeit part listings.

Similar products 20