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BCW32LT1G

Onsemi

BCW32LT1G by Onsemi

BCW32LT1G by Onsemi is a NPN BJT transistor with 3 terminals, hFE of 200, and max operating temp of 150°C. It is used in small outline packages for applications requiring a collector-emitter voltage of 32V and collector current up to 0.1A.

Median Price

$0.046

Lifecycle Status

Suppliers In-Stock

28

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Arrow

USA . 35,000 parts In-Stock

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$0.014

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35,000

$0.014

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Mouser Electronics

USA . 10,774 parts In-Stock

1+ parts

$0.180

100+ parts

$0.067

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$0.043

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$0.035

10,774

$0.180

$0.067

$0.043

$0.035

DigiKey

USA . 4,106 parts In-Stock

1+ parts

$0.180

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$0.067

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$0.043

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$0.030

4,106

$0.180

$0.067

$0.043

$0.030

Rochester

USA . 465,000 parts In-Stock

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-

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$0.047

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$0.039

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$0.047

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Verical

USA . 300,000 parts In-Stock

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$0.044

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Future Electronics

Canada . 21,000 parts In-Stock

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$0.025

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Chip1Stop

Japan . 5,500 parts In-Stock

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$0.013

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$0.013

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Farnell

UK . 3,760 parts In-Stock

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$0.053

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$0.041

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$0.037

3,760

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$0.053

$0.041

$0.037

Element14

Singapore . 3,760 parts In-Stock

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$0.091

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$0.063

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3,760

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$0.063

$0.062

Newark

USA . 3,000 parts In-Stock

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Distributors (In-Stock)

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Digiode

USA . 2,397 parts In-Stock

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Nova Conductors

Japan . 10 parts In-Stock

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$0.034

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10

$0.034

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TME

Poland . 1,481 parts In-Stock

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$0.160

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$0.071

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$0.042

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$0.029

1,481

$0.160

$0.071

$0.042

$0.029

Vyrian

USA . 136,336 parts In-Stock

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Flip Electronics

USA . 84,000 parts In-Stock

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IBS Electronics

USA . 60,000 parts In-Stock

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$0.040

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$0.040

NAC Semi

USA . 18,000 parts In-Stock

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$0.052

Dan-Mar Components

USA . 5,843 parts In-Stock

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Bristol Electronics

USA . 5,426 parts In-Stock

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Specialty Parts & Electronic Components, Inc. (S.P.E.C.)

USA . 5,035 parts In-Stock

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Cyclops Electronics Ltd

UK . 4,938 parts In-Stock

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ACDS - Activité Composants Distribution Service

France . 3,000 parts In-Stock

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VNN

France . 2,825 parts In-Stock

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Schukat

Germany . 2,500 parts In-Stock

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$0.053

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$0.033

2,500

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$0.033

Inventory MP

USA . 1,651 parts In-Stock

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Corel Iberica Componentes, S.L.

Spain . 960 parts In-Stock

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Connector Distribution Corp

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Right Parts Inc.

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130

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Distributors (Availability)

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Ampacity Inc.

Singapore . 135,663 parts In-Stock

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$0.011

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Corphita

USA . 1,729 parts In-Stock

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Corohmni

South Africa . 421 parts In-Stock

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$0.016

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421

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Bastille Electronics

Australia . 300 parts In-Stock

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$0.034

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$0.032

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$0.031

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300

$0.034

$0.032

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Argo Parts USA

USA . 3,428 parts In-Stock

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$0.034

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$0.033

3,428

$0.034

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$0.033

Continental Prestige Electronics

USA . 465,000 parts In-Stock

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$0.024

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Perfect Parts

USA . 145,861 parts In-Stock

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Authorized Procurement Solutions

USA . 18,000 parts In-Stock

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Glotronic Ltd.

UK . 16,800 parts In-Stock

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Kepictronics

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SupplyDigital Components

Austria . 6,935 parts In-Stock

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Kulean Microsystems

USA . 5,576 parts In-Stock

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S.R.D Solutions

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Problanco Electronics

Mexico . 4,488 parts In-Stock

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Eastek

USA . 3,000 parts In-Stock

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GreenTree Electronics

Israel . 3,000 parts In-Stock

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A-Z Elektronik GmbH

Germany . 2,520 parts In-Stock

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Alle Elektronik GmbH

Germany . 1,680 parts In-Stock

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TANS Electronics

Latvia . 1,383 parts In-Stock

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Lixinc

USA . 703 parts In-Stock

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UHIMA Technologies

Türkiye . 211 parts In-Stock

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Overview

Experience the superior quality and reliability of the BCW32LT1G by Onsemi, a leading manufacturer in the industry. This NPN Small Signal Bipolar Junction Transistor (BJT) offers exceptional performance and versatility in a compact rectangular package. Ideal for a wide range of applications, this transistor provides customers with increased efficiency and precision in their electronic projects. Trust in Onsemi to deliver top-notch products that meet your needs and exceed your expectations. Elevate your designs with the BCW32LT1G and unleash the full potential of your creations.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/epoxy material provides durability and protection for the transistor, making it suitable for various applications.

Polarity or Channel Type: NPN

NPN transistors are commonly used and offer high efficiency in amplification and switching circuits.

Configuration: SINGLE

Single configuration simplifies circuit design and reduces complexity in applications.

Surface Mount: YES

Surface mount capability allows for easy and convenient installation on PCBs.

Package Shape: RECTANGULAR

Rectangular shape offers compatibility with standard PCB layouts and facilitates efficient placement.

No. of Terminals: 3

Three terminals provide necessary connections for proper transistor operation in circuits.

Maximum Power Dissipation (Abs): 0.225 W

High maximum power dissipation allows for reliable performance under varying load conditions.

Minimum DC Current Gain (hFE): 200

High minimum DC current gain ensures stable and consistent amplification of signals in the transistor.

Maximum Operating Temperature: 150 °C

Wide operating temperature range enables the transistor to function effectively in different environmental conditions.

Maximum Collector-Emitter Voltage: 32 V

High maximum collector-emitter voltage rating provides robustness and protection against voltage spikes.

Transistor Element Material: SILICON

Silicon material offers superior performance and reliability in transistor operation.

Minimum Operating Temperature: -55 °C

Low minimum operating temperature ensures functionality in cold environments or during temperature fluctuations.

Maximum Collector Current (IC): 0.1 A

High maximum collector current allows for handling higher current loads in circuits.

Terminal Finish: Matte Tin (Sn) - annealed

Matte tin finish provides good solderability and reliability for terminal connections on the transistor.

Terminal Position: DUAL

Dual terminal position offers flexibility in circuit layout and connection options for the transistor.

Maximum Time At Peak Reflow Temperature (s): 40

Good thermal performance with maximum time at peak reflow temperature ensures proper soldering and reliability during assembly.

Peak Reflow Temperature °C: 260

High peak reflow temperature capability allows for reliable and consistent soldering of the transistor on PCBs.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) BCW32LT1G attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

32 V

Configuration:

Minimum DC Current Gain (hFE):

200

JEDEC-95 Code:

TO-236AB

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

Matte Tin (Sn) - annealed

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

40

Transistor Element Material:

SILICON

Trade Compliance

BCW32LT1G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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