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BCW30LT1

Onsemi

BCW30LT1 by Onsemi

BCW30LT1 by Onsemi is a PNP BJT transistor with 215 min hFE, 32V VCEO, and 0.1A IC. It is used in small outline packages for applications requiring low power dissipation and high collector current.

Median Price

$0.035

Lifecycle Status

Suppliers In-Stock

20

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 126,000 parts In-Stock

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-

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$0.030

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$0.025

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$0.023

126,000

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$0.030

$0.025

$0.023

DigiKey

USA . 126,000 parts In-Stock

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$0.040

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$0.040

Verical

USA . 123,000 parts In-Stock

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Digiode

USA . 2,330 parts In-Stock

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$0.024

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2,330

$0.024

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Vyrian

USA . 469 parts In-Stock

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$0.025

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469

$0.025

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Zilex Electronics Inc.

Canada . 135,000 parts In-Stock

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DigiKey Marketplace

USA . 126,000 parts In-Stock

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Inland Empire Components Inc.

USA . 24,000 parts In-Stock

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Electronic Expediters

USA . 10,797 parts In-Stock

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Mil-Aero Solutions, Inc.

USA . 9,000 parts In-Stock

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ComSIT Distribution GmbH

Germany . 6,691 parts In-Stock

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ACDS - Activité Composants Distribution Service

France . 5,929 parts In-Stock

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Bristol Electronics

USA . 3,689 parts In-Stock

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Kronex Distribution GmbH

USA . 3,000 parts In-Stock

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Semi Source

USA . 2,980 parts In-Stock

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J2 Sourcing AB

Sweden . 2,849 parts In-Stock

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Component Sense

UK . 2,697 parts In-Stock

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2,697

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North Shore Components

USA . 2,000 parts In-Stock

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2,000

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Sinequanon

UK . 2,000 parts In-Stock

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Lantek

USA . 900 parts In-Stock

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900

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Distributors (Availability)

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Corohmni

South Africa . 474 parts In-Stock

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$0.020

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474

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Corphita

USA . 2,045 parts In-Stock

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$0.022

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$0.022

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Perfect Parts

USA . 179,375 parts In-Stock

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Continental Prestige Electronics

USA . 126,000 parts In-Stock

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Cyclops Electronics Ltd (Excess)

UK . 80,078 parts In-Stock

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Kepictronics

USA . 30,000 parts In-Stock

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Metaverse IC Inc.

Canada . 15,000 parts In-Stock

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SupplyDigital Components

Austria . 7,607 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

USA . 7,059 parts In-Stock

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TANS Electronics

Latvia . 6,088 parts In-Stock

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Kulean Microsystems

USA . 4,920 parts In-Stock

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A-Z Elektronik GmbH

Germany . 2,850 parts In-Stock

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Northwest PG Solutions

USA . 2,239 parts In-Stock

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Glotronic Ltd.

UK . 2,224 parts In-Stock

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Alle Elektronik GmbH

Germany . 1,900 parts In-Stock

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Assy Fe

Spain . 1,555 parts In-Stock

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Problanco Electronics

Mexico . 1,378 parts In-Stock

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GreenTree Electronics

Israel . 900 parts In-Stock

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Native Components

USA . 810 parts In-Stock

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UHIMA Technologies

Türkiye . 303 parts In-Stock

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Overview

Enhance your electronic projects with the BCW30LT1 by Onsemi, a top-notch Small Signal Bipolar Junction Transistor that guarantees reliability and superior performance. Manufactured by Onsemi, a renowned industry leader, this PNP transistor is ideal for a wide range of applications. Its small outline package and high DC current gain make it a versatile choice for various designs. With a maximum power dissipation of 0.225 W and a collector-emitter voltage of 32 V, this transistor offers exceptional value and efficiency to customers looking to elevate their projects to the next level. Upgrade your electronics with the BCW30LT1 and experience the difference quality makes.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the transistor, making it suitable for a variety of applications.

Polarity or Channel Type: PNP

The PNP configuration allows for easy integration into circuits that require this type of transistor.

Configuration: SINGLE

Simplified design and ease of use in circuits requiring a single transistor configuration.

Surface Mount: YES

Allows for easy integration into surface mount technology for compact and efficient circuit designs.

Package Shape: RECTANGULAR

Rectangular shape allows for efficient placement and utilization of space in circuit designs.

Maximum Power Dissipation (Abs): 0.225 W

Capable of handling moderate power levels, making it suitable for a range of applications.

Minimum DC Current Gain (hFE): 215

High DC current gain ensures reliable and stable operation in various circuit configurations.

Maximum Operating Temperature: 150 °C

Can operate at high temperatures without performance degradation, suitable for industrial applications.

Maximum Collector-Emitter Voltage: 32 V

Can handle relatively high voltage levels, expanding its potential use cases.

Transistor Element Material: SILICON

Silicon material provides high performance and reliability in transistor operation.

Maximum Collector Current (IC): 0.1 A

Capable of handling moderate current levels, suitable for various low-power applications.

Terminal Finish: Tin/Lead (Sn/Pb)

Tin/lead finish provides good solderability and reliability in circuit connections.

Peak Reflow Temperature °C: 235

Capable of withstanding high reflow temperatures during manufacturing processes.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) BCW30LT1 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

32 V

Configuration:

Minimum DC Current Gain (hFE):

215

JEDEC-95 Code:

TO-236AB

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e0

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

235

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

Tin/Lead (Sn/Pb)

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Element Material:

SILICON

Trade Compliance

BCW30LT1 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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