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BCW30,235

NXP Semiconductors

BCW30,235 by NXP Semiconductors

BCW30,235 by NXP Semiconductors is a PNP BJT transistor for switching applications. It has a max VCEsat of 0.3V and min hFE of 215. With a max operating temperature of 150°C, it is suitable for small outline packages in surface mount configurations.

Median Price

$0.059

Lifecycle Status

Suppliers In-Stock

7

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

DigiKey

USA . 9,961 parts In-Stock

1+ parts

$0.230

100+ parts

$0.086

1k+ parts

$0.056

10k+ parts

$0.042

9,961

$0.230

$0.086

$0.056

$0.042

Rochester

USA . 9,628 parts In-Stock

1+ parts

-

100+ parts

$0.059

1k+ parts

$0.049

10k+ parts

$0.043

9,628

-

$0.059

$0.049

$0.043

Verical

USA . 9,628 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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10k+ parts

$0.054

9,628

-

-

-

$0.054

Distributors (In-Stock)

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Digiode

USA . 2,132 parts In-Stock

1+ parts

$0.021

100+ parts

-

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2,132

$0.021

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Chip Stock

USA . 156,000 parts In-Stock

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156,000

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Vyrian

USA . 6,757 parts In-Stock

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6,757

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Anansix

USA . 794 parts In-Stock

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794

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Distributors (Availability)

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Ampacity Inc.

Singapore . 9,428 parts In-Stock

1+ parts

$0.019

100+ parts

-

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9,428

$0.019

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Corphita

USA . 1,444 parts In-Stock

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$0.020

100+ parts

-

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1,444

$0.020

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Component Stockers USA

USA . 12,931 parts In-Stock

1+ parts

$0.020

100+ parts

$0.020

1k+ parts

$0.020

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-

12,931

$0.020

$0.020

$0.020

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Microchip USA

USA . 12,022 parts In-Stock

1+ parts

$0.130

100+ parts

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12,022

$0.130

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AZTECH Wire

Italy . 2,757 parts In-Stock

1+ parts

$0.130

100+ parts

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2,757

$0.130

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Northwest PG Solutions

USA . 1,804 parts In-Stock

1+ parts

$9.361

100+ parts

$8.425

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1,804

$9.361

$8.425

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UNI Independent Distributors

Spain . 2,442 parts In-Stock

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2,442

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Supply Digital

USA . 1,176 parts In-Stock

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1,176

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Native Components

USA . 886 parts In-Stock

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$4.539

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886

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$4.539

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Overview

Discover the BCW30,235 by NXP Semiconductors - a versatile PNP small signal bipolar junction transistor designed for switching applications. With a compact rectangular package and impressive performance specifications, this transistor offers reliable functionality and efficient power dissipation. Ideal for a range of electronic projects, the BCW30,235 is a high-quality component that delivers exceptional value and benefits to customers. Trust in NXP Semiconductors' expertise and innovation to take your designs to the next level with this top-of-the-line transistor.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material makes the transistor lightweight and durable, ideal for a variety of applications.

Polarity or Channel Type: PNP

PNP transistors are commonly used in switching applications and can complement existing NPN transistors in a circuit.

Configuration: SINGLE

Single configuration simplifies circuit design and reduces complexity, making it easier to integrate into a system.

Transistor Application: SWITCHING

Designed for switching applications, this transistor can rapidly switch between on and off states efficiently.

Surface Mount: YES

Surface mount capability makes it easy to mount and solder, saving space and enabling automated assembly processes.

Maximum VCEsat: 0.3 V

Low VCEsat value indicates minimal voltage drop when transistor is saturated, improving overall efficiency of the circuit.

Package Shape: RECTANGULAR

Rectangular shape provides easy handling and mounting options in tight spaces or on circuit boards.

Terminal Form: GULL WING

Gull wing terminals offer mechanical strength and secure connections, ensuring reliable performance in various environments.

No. of Terminals: 3

Having 3 terminals allows for connectivity options and flexibility in circuit designs.

Maximum Power Dissipation (Abs): 0.25 W

Low power dissipation enables the transistor to operate efficiently without overheating, maintaining reliability.

Package Style (Meter): SMALL OUTLINE

Small outline package style saves space, making it suitable for compact electronic devices or densely populated PCBs.

Minimum DC Current Gain (hFE): 215

High minimum DC current gain ensures stable and predictable amplification in various circuit configurations.

Maximum Operating Temperature: 150 °C

With a high operating temperature range, the transistor can withstand demanding environmental conditions without performance degradation.

Maximum Collector-Emitter Voltage: 32 V

High collector-emitter voltage rating provides protection against voltage spikes and overloads, enhancing circuit robustness.

Transistor Element Material: SILICON

Silicon material offers good performance characteristics, such as high conductivity and reliability, making it a suitable choice for transistors.

Maximum Collector Current (IC): 0.1 A

Sufficient collector current rating allows the transistor to handle current loads within its specified limits.

Terminal Finish: TIN

Tin terminal finish provides good solderability and corrosion resistance, ensuring reliable connections and longevity.

Terminal Position: DUAL

Dual terminal position offers additional connection options and flexibility in circuit layout and design.

Maximum Time At Peak Reflow Temperature (s): 30

Short time at peak reflow temperature minimizes thermal stress, preventing damage to the transistor during soldering processes.

Peak Reflow Temperature °C: 260

High peak reflow temperature tolerance allows for compatibility with standard reflow soldering processes, ensuring reliable assembly.

Nominal Transition Frequency (fT): 100 MHz

High nominal transition frequency indicates fast response time and high-frequency operation, suitable for high-speed switching applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) BCW30,235 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from NXP Semiconductors

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

32 V

Configuration:

Minimum DC Current Gain (hFE):

215

JEDEC-95 Code:

TO-236AB

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum VCEsat:

.3 V

Trade Compliance

BCW30,235 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.21.00.95

SB

8541.21.00.80

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

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