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BCW33LT1

Onsemi

BCW33LT1 by Onsemi

BCW33LT1 by Onsemi is a NPN BJT transistor with 3 terminals, ideal for switching applications. It offers a min hFE of 420 and can handle a max collector-emitter voltage of 32V. With a max power dissipation of 0.225W and operating temperature up to 150 °C, it is suitable for small outline packages in surface mount configurations.

Median Price

$0.035

Lifecycle Status

Suppliers In-Stock

14

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 15,000 parts In-Stock

1+ parts

-

100+ parts

$0.030

1k+ parts

$0.025

10k+ parts

$0.023

15,000

-

$0.030

$0.025

$0.023

DigiKey

USA . 15,000 parts In-Stock

1+ parts

-

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$0.040

15,000

-

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$0.040

Verical

USA . 15,000 parts In-Stock

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15,000

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Digiode

USA . 235 parts In-Stock

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$0.024

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235

$0.024

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Vyrian

USA . 534 parts In-Stock

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$0.025

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534

$0.025

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Legend Electronics Inc.

USA . 90,000 parts In-Stock

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ComSIT Distribution GmbH

Germany . 63,000 parts In-Stock

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63,000

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Zilex Electronics Inc.

Canada . 15,000 parts In-Stock

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15,000

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Semi Source

USA . 8,918 parts In-Stock

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ACDS - Activité Composants Distribution Service

France . 7,720 parts In-Stock

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7,720

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Digital Electronic Gebert Verwaltungs UG

Germany . 6,000 parts In-Stock

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6,000

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Component Sense

UK . 2,578 parts In-Stock

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$0.020

2,578

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$0.020

ABC Electronics Ltd.

UK . 1,262 parts In-Stock

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1,262

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Bristol Electronics

USA . 104 parts In-Stock

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104

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Distributors (Availability)

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Corohmni

South Africa . 416 parts In-Stock

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$0.020

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416

$0.020

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Corphita

USA . 1,482 parts In-Stock

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$0.022

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1,482

$0.022

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Ampacity Inc.

Singapore . 14,792 parts In-Stock

1+ parts

$0.046

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14,792

$0.046

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Perfect Parts

USA . 22,176 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

USA . 17,582 parts In-Stock

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Assy Fe

Spain . 11,980 parts In-Stock

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Cyclops Electronics Ltd (Excess)

UK . 9,900 parts In-Stock

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9,900

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Problanco Electronics

Mexico . 6,962 parts In-Stock

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6,962

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Alle Elektronik GmbH

Germany . 4,715 parts In-Stock

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Glotronic Ltd.

UK . 3,700 parts In-Stock

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3,700

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RC Electronics

USA . 2,700 parts In-Stock

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$0.040

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2,700

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$0.040

$0.040

Kepictronics

USA . 2,460 parts In-Stock

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Metaverse IC Inc.

Canada . 2,400 parts In-Stock

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TANS Electronics

Latvia . 1,106 parts In-Stock

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SupplyDigital Components

Austria . 1,058 parts In-Stock

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Northwest PG Solutions

USA . 851 parts In-Stock

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851

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Native Components

USA . 405 parts In-Stock

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405

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UHIMA Technologies

Türkiye . 253 parts In-Stock

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Kulean Microsystems

USA . 52 parts In-Stock

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Overview

Enhance your electronic designs with the BCW33LT1 by Onsemi, a high-quality NPN small signal bipolar junction transistor perfect for switching applications. Manufactured by Onsemi, a trusted name in semiconductor technology, this transistor offers reliability and performance. With its compact size, Gull Wing terminals, and maximum power dissipation of 0.225 W, this product is ideal for a wide range of applications. Experience the value and benefits of using the BCW33LT1 in your next project and see the difference it can make in enhancing your circuits' efficiency and functionality.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides a good balance of durability and cost-effectiveness.

Polarity or Channel Type: NPN

NPN transistors are commonly used in electronic devices, making this product versatile for various applications.

Configuration: SINGLE

Single configuration simplifies circuit design and implementation.

Transistor Application: SWITCHING

Designed for switching applications, offering fast response times.

Surface Mount: YES

Suitable for surface mount technology, saving space and improving manufacturability.

Package Shape: RECTANGULAR

Rectangular shape allows for easy placement and alignment on PCBs.

Terminal Form: GULL WING

Gull wing terminals provide reliable connections and easy soldering during assembly.

No. of Terminals: 3

Three terminals ensure proper connectivity in the circuit.

Maximum Power Dissipation: 0.225 W

Can handle a maximum power dissipation of 0.225 W, suitable for low-power applications.

Package Style: SMALL OUTLINE

Small outline package style saves space on the PCB.

Minimum DC Current Gain (hFE): 420

High minimum DC current gain ensures stable and reliable operation.

Maximum Operating Temperature: 150 °C

Can operate at temperatures up to 150 °C, suitable for various environments.

Maximum Collector-Emitter Voltage: 32 V

Can handle a maximum voltage of 32 V, suitable for different voltage requirements.

Transistor Element Material: SILICON

Silicon material offers good performance and reliability for the transistor.

Maximum Collector Current (IC): 0.1 A

Can handle a maximum collector current of 0.1 A, suitable for low-power applications.

Terminal Finish: Tin/Lead (Sn/Pb)

Tin/Lead terminal finish ensures good solderability and conductivity.

Terminal Position: DUAL

Dual terminal position allows for flexible mounting orientations.

Maximum Time At Peak Reflow Temperature (s): 30

Can withstand peak reflow temperature for up to 30 seconds during assembly.

Peak Reflow Temperature °C: 235

Peak reflow temperature of 235 °C ensures proper soldering and assembly of the transistor.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) BCW33LT1 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

32 V

Configuration:

Minimum DC Current Gain (hFE):

420

JEDEC-95 Code:

TO-236AB

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e0

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

235

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

Tin/Lead (Sn/Pb)

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

BCW33LT1 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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