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BC618RL1G

Onsemi

BC618RL1G by Onsemi

BC618RL1G by Onsemi is a NPN Darlington transistor with hFE of 4000, VCE of 55V, and IC of 1A. Ideal for amplifier applications due to its high gain and temperature range up to 150 °C. Packaged in cylindrical shape with through-hole terminals for easy installation.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Vyrian

USA . 2,349 parts In-Stock

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Digiode

USA . 1,877 parts In-Stock

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Component Stockers USA

USA . 575 parts In-Stock

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$99.990

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QUARKTWIN TECHNOLOGY LTD

USA . 9,888 parts In-Stock

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SupplyDigital Components

Austria . 7,359 parts In-Stock

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TANS Electronics

Latvia . 6,354 parts In-Stock

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Problanco Electronics

Mexico . 5,664 parts In-Stock

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Glotronic Ltd.

UK . 3,700 parts In-Stock

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Northwest PG Solutions

USA . 2,228 parts In-Stock

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Corphita

USA . 1,654 parts In-Stock

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UHIMA Technologies

Türkiye . 641 parts In-Stock

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Corohmni

South Africa . 473 parts In-Stock

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Kulean Microsystems

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Native Components

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Overview

Upgrade your amplifier with the BC618RL1G by Onsemi, a high-quality Small Signal Bipolar Junction Transistor. Manufactured by Onsemi, known for their top-notch products, this NPN transistor offers a DC current gain of 4000 and a maximum collector-emitter voltage of 55V. Ideal for amplifier applications, this DARLINGTON configuration transistor provides superior performance and reliability, ensuring that your projects run smoothly. Trust Onsemi for all your transistor needs and experience the difference in quality and value with the BC618RL1G.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the transistor, making it suitable for various applications.

Polarity or Channel Type: NPN

Commonly used in amplification circuits, ensures compatibility with standard circuit designs.

Configuration: DARLINGTON

High current gain due to the Darlington configuration, suitable for applications requiring high amplification.

Transistor Application: AMPLIFIER

Designed specifically for amplification purposes, ensuring optimal performance in amplifier circuits.

Package Shape: ROUND

Compact and space-saving design, making it suitable for applications with limited space constraints.

Terminal Form: THROUGH-HOLE

Easy to solder onto PCBs, ensuring a secure and reliable connection.

Maximum Operating Temperature: 150 °C

Can operate at high temperatures without performance degradation, suitable for industrial applications.

Maximum Collector-Emitter Voltage: 55 V

Suitable for applications requiring higher voltage handling capabilities.

Maximum Collector Current (IC): 1 A

Capable of handling high currents, suitable for power applications.

Nominal Transition Frequency (fT): 150 MHz

High transition frequency for fast switching speeds, suitable for high-frequency applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) BC618RL1G attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Additional Features:

EUROPEAN PART NUMBER

Maximum Collector Current (IC):

1 A

Maximum Collector-Emitter Voltage:

55 V

Configuration:

Minimum DC Current Gain (hFE):

4000

JEDEC-95 Code:

TO-226AA

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

TIN SILVER COPPER

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

BC618RL1G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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