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BC618RL

Onsemi

BC618RL by Onsemi

BC618RL by Onsemi is a NPN Darlington transistor with hFE of 4000, ideal for amplifier applications. With a max operating temp of 150 °C and Vce of 55V, it offers high performance in a cylindrical package suitable for through-hole mounting.

Median Price

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Lifecycle Status

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2

In-Stock Inventory

1k+

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Digiode

USA . 1,229 parts In-Stock

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Vyrian

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TANS Electronics

Latvia . 7,518 parts In-Stock

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SupplyDigital Components

Austria . 5,284 parts In-Stock

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Kulean Microsystems

USA . 1,624 parts In-Stock

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Corphita

USA . 1,429 parts In-Stock

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Native Components

USA . 994 parts In-Stock

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Problanco Electronics

Mexico . 765 parts In-Stock

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UHIMA Technologies

Türkiye . 531 parts In-Stock

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Northwest PG Solutions

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Corohmni

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Overview

Unlock the power of high-quality amplification with the BC618RL from Onsemi. As a leading manufacturer in the industry, Onsemi delivers top-notch Small Signal Bipolar Junction Transistors (BJT) like no other. This NPN Darlington transistor is perfect for amplifier applications, offering customers exceptional value and performance. With a minimum DC current gain of 4000 and a maximum operating temperature of 150 °C, the BC618RL ensures reliable and efficient operation. Trust Onsemi to provide you with cutting-edge technology that exceeds expectations.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the internal components, ensuring a longer lifespan for the transistor.

Polarity or Channel Type: NPN

Commonly used in amplification circuits, making it a versatile choice for various electronic applications.

Configuration: DARLINGTON

High current gain and low saturation voltage make Darlington transistors suitable for applications requiring high power amplification.

Transistor Application: AMPLIFIER

Specifically designed for amplification purposes, ensuring optimal performance in audio or signal amplification circuits.

Package Shape: ROUND

Allows for easy placement and installation in circuits, making it convenient for assembly.

Terminal Form: THROUGH-HOLE

Enables secure and stable connections on the circuit board, reducing the risk of loose connections or signal interruptions.

No. of Terminals: 3

Provides the necessary connections for proper functioning in the circuit, ensuring compatibility with standard transistor configurations.

Package Style (Meter): CYLINDRICAL

Compact and space-saving design that is ideal for applications where board space is limited.

Minimum DC Current Gain (hFE): 4000

High current gain ensures efficient amplification of signals, making it suitable for low-power applications.

Maximum Operating Temperature: 150 °C

Can withstand high operating temperatures, making it suitable for applications where heat dissipation is a concern.

Maximum Collector-Emitter Voltage: 55 V

Withstands high voltage levels, ensuring reliability and protection against voltage spikes in the circuit.

Transistor Element Material: SILICON

Silicon-based construction provides stability and reliability, ensuring consistent performance over time.

Maximum Collector Current (IC): 1 A

Able to handle high collector currents, making it suitable for applications that require power amplification.

Terminal Finish: TIN LEAD

Enhances conductivity and provides corrosion resistance, ensuring long-term reliability in connection points.

Terminal Position: BOTTOM

Facilitates easy soldering and connection to the circuit board, enhancing installation efficiency.

Nominal Transition Frequency (fT): 150 MHz

High transition frequency allows for fast switching speeds, ideal for applications that require rapid signal processing.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) BC618RL attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Additional Features:

EUROPEAN PART NUMBER

Maximum Collector Current (IC):

1 A

Maximum Collector-Emitter Voltage:

55 V

Configuration:

Minimum DC Current Gain (hFE):

4000

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Polarity or Channel Type:

NPN

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

BC618RL Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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