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BC618RLRE

Onsemi

BC618RLRE by Onsemi

BC618RLRE by Onsemi is a NPN Darlington transistor with hFE of 4000, VCE of 55V, and IC of 1A. Ideal for applications requiring high current gain and voltage amplification in electronic circuits. Package style: Cylindrical, making it suitable for through-hole mounting in various devices.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 2,334 parts In-Stock

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Digiode

USA . 793 parts In-Stock

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Native Components

USA . 498 parts In-Stock

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$2.060

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498

$2.060

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Northwest PG Solutions

USA . 309 parts In-Stock

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$2.266

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Kulean Microsystems

USA . 7,833 parts In-Stock

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SupplyDigital Components

Austria . 7,721 parts In-Stock

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Problanco Electronics

Mexico . 4,158 parts In-Stock

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TANS Electronics

Latvia . 2,590 parts In-Stock

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UHIMA Technologies

Türkiye . 933 parts In-Stock

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Corphita

USA . 854 parts In-Stock

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Corohmni

South Africa . 325 parts In-Stock

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Overview

Elevate your electronic designs with the BC618RLRE by Onsemi, a high-quality Small Signal Bipolar Junction Transistor (BJT) that offers exceptional performance and reliability. Manufactured by industry leader Onsemi, this NPN Darlington transistor boasts a DC current gain of 4000 and can handle a maximum collector-emitter voltage of 55V, making it ideal for a wide range of applications. With its robust construction and cutting-edge technology, this transistor ensures superior functionality and longevity in your projects. Trust Onsemi's reputation for excellence and unlock endless possibilities with the BC618RLRE.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the internal components of the transistor.

Polarity or Channel Type: NPN

Common type of transistor that allows for easy interfacing in various electronic circuits.

Configuration: DARLINGTON

Offers high current gain and allows for amplification of weak signals with low input current.

Package Shape: ROUND

Compact shape that can easily fit into tight spaces on a circuit board.

Terminal Form: THROUGH-HOLE

Enables easy soldering onto a circuit board for secure connections.

No. of Terminals: 3

Simple configuration for basic circuit connections.

Package Style (Meter): CYLINDRICAL

Provides a standard packaging style that is widely used in the industry.

Minimum DC Current Gain (hFE): 4000

High current gain allows for better signal amplification and low input current requirements.

Maximum Operating Temperature: 150 °C

Can withstand high temperatures, making it suitable for various operating conditions.

Maximum Collector-Emitter Voltage: 55 V

Can handle relatively high voltages in a circuit without breakdown.

Transistor Element Material: SILICON

Common material choice for transistors due to its reliability and performance characteristics.

Maximum Collector Current (IC): 1 A

Can handle high current levels without getting damaged.

Terminal Finish: TIN LEAD

Provides good electrical conductivity for reliable connections.

Terminal Position: BOTTOM

Standard terminal placement for easy soldering onto a circuit board.

Nominal Transition Frequency (fT): 150 MHz

Allows for high-frequency signal processing and amplification.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) BC618RLRE attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

1 A

Maximum Collector-Emitter Voltage:

55 V

Configuration:

Minimum DC Current Gain (hFE):

4000

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Polarity or Channel Type:

NPN

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

BC618RLRE Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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