Loading...

BC618RLRP

Onsemi

BC618RLRP by Onsemi

BC618RLRP by Onsemi is a NPN Darlington transistor with hFE of 4000, VCE of 55V, and IC of 1A. Ideal for applications requiring high current gain and voltage amplification in electronic circuits. Package style: Cylindrical, Terminal form: Through-hole, making it suitable for various through-hole PCB designs.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 2,339 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,339

-

-

-

-

Vyrian

USA . 2,205 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,205

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

TANS Electronics

Latvia . 6,174 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

6,174

-

-

-

-

Problanco Electronics

Mexico . 5,508 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

5,508

-

-

-

-

Kulean Microsystems

USA . 3,682 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

3,682

-

-

-

-

SupplyDigital Components

Austria . 2,434 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,434

-

-

-

-

Northwest PG Solutions

USA . 2,338 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$3.489

10k+ parts

-

2,338

-

-

$3.489

-

Corphita

USA . 1,336 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,336

-

-

-

-

UHIMA Technologies

Türkiye . 790 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

790

-

-

-

-

Native Components

USA . 709 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$3.453

10k+ parts

-

709

-

-

$3.453

-

Corohmni

South Africa . 436 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

436

-

-

-

-

Overview

Unleash the power of innovation with the BC618RLRP by Onsemi, a top-of-the-line Small Signal Bipolar Junction Transistor that delivers unparalleled performance and reliability. Manufactured by the trusted brand Onsemi, this NPN Darlington transistor is designed for ultimate precision and efficiency. Its versatile applications make it ideal for a wide range of electronic devices, ensuring seamless functionality and optimal performance. Elevate your projects with the BC618RLRP and experience the quality and value that only Onsemi can provide.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/Epoxy packaging makes the transistor lightweight and durable, ensuring long-term reliability in various applications.

Polarity or Channel Type: NPN

NPN polarity allows for easy integration with other NPN components in a circuit, simplifying design and compatibility.

Configuration: DARLINGTON

Darlington configuration provides high current gain and allows for low input current, making it suitable for applications requiring high input impedance.

Package Shape: ROUND

Round package shape is compact and space-saving, ideal for applications where board space is limited.

Terminal Form: THROUGH-HOLE

Through-hole terminals offer easy and secure mounting on a printed circuit board, ensuring stable connections.

No. of Terminals: 3

Three terminals allow for easy connection in a circuit, providing flexibility in design and application.

Minimum DC Current Gain (hFE): 4000

High minimum DC current gain ensures amplification of weak signals with high accuracy and minimal distortion.

Maximum Operating Temperature: 150 °C

High maximum operating temperature allows for reliable performance in extreme environmental conditions without overheating.

Maximum Collector-Emitter Voltage: 55 V

High maximum collector-emitter voltage rating provides protection against voltage spikes and allows for use in a wide range of applications.

Transistor Element Material: SILICON

Silicon material ensures high efficiency, low noise, and stable performance over a wide temperature range.

Maximum Collector Current (IC): 1 A

High maximum collector current rating enables the transistor to handle high current loads, making it suitable for power applications.

Terminal Finish: TIN LEAD

Tin lead terminal finish offers good solderability and oxidation resistance, ensuring reliable connections in the circuit.

Terminal Position: BOTTOM

Bottom terminal position simplifies board layout and heat dissipation, making installation and thermal management easier.

Nominal Transition Frequency (fT): 150 MHz

High nominal transition frequency allows for high-speed switching and amplification of RF signals, making it suitable for radio frequency applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) BC618RLRP attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

1 A

Maximum Collector-Emitter Voltage:

55 V

Configuration:

Minimum DC Current Gain (hFE):

4000

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Polarity or Channel Type:

NPN

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

BC618RLRP Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

previous next
The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

Category top products 20

Authentic purchasing experiences

Partstack™ will investigate all reported instances of potential suspect/counterfeit part listings.

Similar products 20