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BC617-T/R

NXP Semiconductors

BC617-T/R by NXP Semiconductors

BC617-T/R by NXP is a high-performance NPN Darlington transistor ideal for switching applications. It features a max VCEsat of 1.1V, hFE of 10,000, and operates up to 150 °C. Its cylindrical package and through-hole design make it versatile for various electronic circuits.

Median Price

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Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

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Digiode

USA . 4,974 parts In-Stock

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Vyrian

USA . 4,230 parts In-Stock

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Anansix

USA . 1,301 parts In-Stock

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One Stop Electronics

USA . 1,399 parts In-Stock

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$41.050

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1,399

$41.050

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Corphita

USA . 3,992 parts In-Stock

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Northwest PG Solutions

USA . 1,900 parts In-Stock

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$3.732

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$3.732

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UNI Independent Distributors

Spain . 974 parts In-Stock

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Native Components

USA . 82 parts In-Stock

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$3.694

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Overview

Unlock exceptional performance with the BC617-T/R by NXP Semiconductors—your go-to solution for reliable small signal switching. Renowned for their commitment to quality, NXP delivers a Darlington transistor that excels in efficiency and reliability, making it ideal for various applications from consumer electronics to industrial systems. Experience enhanced gain, low saturation voltage, and impressive thermal stability, ensuring your designs achieve optimal performance with ease!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Durable and lightweight, ensuring reliable performance in various environments.

Polarity or Channel Type: NPN

NPN configuration is ideal for high-speed switching applications, enabling efficient operation.

Configuration: DARLINGTON

Darlington configuration provides high current gain, making it suitable for amplifying low signals.

Transistor Application: SWITCHING

Designed specifically for switching applications, this transistor ensures fast and reliable operation.

Maximum VCEsat: 1.1 V

Low saturation voltage allows for efficient power management, minimizing energy loss during operation.

Package Shape: ROUND

Round package shape aids in efficient heat dissipation, enhancing the transistor's lifespan and reliability.

Terminal Form: THROUGH-HOLE

Through-hole mounting provides robust connectivity and is suitable for prototyping and high-power applications.

No. of Terminals: 3

Three terminals allow for straightforward connections in typical circuit configurations, simplifying design.

Package Style (Meter): CYLINDRICAL

Cylindrical package style optimizes space utilization on PCB while ensuring secure placement.

Minimum DC Current Gain (hFE): 10000

Exceptional current gain enables the transistor to amplify weak signals effectively, enhancing performance.

Maximum Operating Temperature: 150 °C

High temperature tolerance ensures reliability in demanding environments, allowing for versatile applications.

Maximum Collector-Emitter Voltage: 40 V

Capable of withstanding higher voltages, making it suitable for a variety of applications requiring rigid performance.

Transistor Element Material: SILICON

Silicon material provides excellent electrical properties, ensuring efficient operation and stability.

Maximum Collector Current (IC): 1 A

Can handle significant collector current, making it suitable for driving loads and ensuring reliability in applications.

Terminal Position: BOTTOM

Bottom terminal position allows for easy integration into circuit boards, ensuring efficient layout and design.

Nominal Transition Frequency (fT): 155 MHz

High transition frequency enables fast switching speeds, making it ideal for high-frequency applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) BC617-T/R attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from NXP Semiconductors

Specs

Maximum Collector Current (IC):

1 A

Maximum Collector-Emitter Voltage:

40 V

Configuration:

Minimum DC Current Gain (hFE):

10000

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Polarity or Channel Type:

NPN

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum VCEsat:

1.1 V

Trade Compliance

BC617-T/R Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

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