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BC618-AMMO

NXP Semiconductors

BC618-AMMO by NXP Semiconductors

BC618-AMMO by NXP Semiconductors is a high-performance NPN Darlington transistor designed for efficient switching applications. It features a max VCEsat of 1.1V, hFE of 10,000, and operates up to 150 °C. Ideal for compact designs with its cylindrical package and through-hole terminals.

Median Price

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Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

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Digiode

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Anansix

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Vyrian

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Native Components

USA . 360 parts In-Stock

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Northwest PG Solutions

USA . 525 parts In-Stock

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One Stop Electronics

USA . 742 parts In-Stock

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UNI Independent Distributors

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Corphita

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Overview

Unlock exceptional performance with the BC618-AMMO by NXP Semiconductors, a leader in innovation and reliability. Designed for switching applications, this NPN Darlington transistor delivers outstanding efficiency and stability even in demanding conditions. Its robust design ensures maximum durability while minimizing energy loss. Elevate your projects with a component that promises quality and dependability—an ideal choice for automotive, industrial, and consumer electronics applications!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Durable and lightweight packaging provides good protection against environmental factors.

Polarity or Channel Type: NPN

NPN type enables suitable operation in a variety of applications including amplification and switching.

Configuration: DARLINGTON

Darlington configuration offers high current gain, making it ideal for low-signal applications.

Transistor Application: SWITCHING

Optimized for switching applications, ensuring low power loss and high efficiency.

Maximum VCEsat: 1.1 V

Low saturation voltage leads to reduced power dissipation, enhancing overall efficiency.

Package Shape: ROUND

Round package design facilitates easy integration into various circuit layouts.

Terminal Form: THROUGH-HOLE

Through-hole design ensures stable mounting and reliable electrical connections, suitable for a range of PCB designs.

No. of Terminals: 3

Three terminals make it straightforward to interface with other components in circuit designs.

Package Style (Meter): CYLINDRICAL

Cylindrical package style is efficient for space-constrained designs, allowing for compact circuit layouts.

Minimum DC Current Gain (hFE): 10000

Extremely high DC current gain enables effective signal amplification, beneficial for low-level signals.

Maximum Operating Temperature: 150 °C

High thermal tolerance makes it suitable for applications in demanding environments.

Maximum Collector-Emitter Voltage: 55 V

Sufficient collector-emitter voltage rating allows for its use in high voltage applications.

Transistor Element Material: SILICON

Silicon material offers good performance at high frequencies and reliable thermal stability.

Maximum Collector Current (IC): 1 A

Supports a maximum collector current of 1 A, making it versatile for a variety of load applications.

Terminal Position: BOTTOM

Bottom terminal positioning aids in effective heat dissipation, enhancing device longevity.

Nominal Transition Frequency (fT): 155 MHz

High transition frequency supports fast switching applications, making it suitable for RF and high-speed circuits.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) BC618-AMMO attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from NXP Semiconductors

Specs

Maximum Collector Current (IC):

1 A

Maximum Collector-Emitter Voltage:

55 V

Configuration:

Minimum DC Current Gain (hFE):

10000

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Polarity or Channel Type:

NPN

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum VCEsat:

1.1 V

Trade Compliance

BC618-AMMO Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

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