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BC618ZL1

Onsemi

BC618ZL1 by Onsemi

BC618ZL1 by Onsemi is a NPN Darlington transistor with hFE of 4000, VCE of 55V, and IC of 1A. Ideal for amplifier applications due to its high gain and operating temperature up to 150 °C. Its silicon element and cylindrical package make it suitable for through-hole mounting.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Vyrian

USA . 912 parts In-Stock

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Digiode

USA . 608 parts In-Stock

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Northwest PG Solutions

USA . 641 parts In-Stock

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Kulean Microsystems

USA . 6,681 parts In-Stock

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SupplyDigital Components

Austria . 5,909 parts In-Stock

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TANS Electronics

Latvia . 3,663 parts In-Stock

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Corphita

USA . 2,356 parts In-Stock

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Problanco Electronics

Mexico . 1,449 parts In-Stock

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UHIMA Technologies

Türkiye . 770 parts In-Stock

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Corohmni

South Africa . 375 parts In-Stock

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Native Components

USA . 50 parts In-Stock

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Overview

Experience superior performance and reliability with the BC618ZL1 by Onsemi. As a leading manufacturer in the industry, Onsemi delivers high-quality small signal bipolar junction transistors (BJTs) like never before. Ideal for amplifier applications, this NPN Darlington transistor offers a minimum DC current gain of 4000, ensuring optimal functionality. With a maximum operating temperature of 150 °C and a maximum collector-emitter voltage of 55V, this transistor provides unmatched efficiency and durability. Trust Onsemi's BC618ZL1 for all your electronic needs and witness the difference in performance today.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection for the transistor, ensuring a longer lifespan and reliability in various operating conditions.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification circuits due to their high input impedance and fast switching speeds, making them ideal for audio amplification and signal processing applications.

Configuration: DARLINGTON

Darlington configuration offers high current gain and low saturation voltage, making it suitable for applications requiring high power amplification.

Transistor Application: AMPLIFIER

Designed specifically for amplification purposes, this transistor is optimized for providing high gain and low noise characteristics in amplifier circuits.

Maximum Operating Temperature: 150 °C

With a high maximum operating temperature, this transistor can withstand elevated temperature environments without compromising performance, making it suitable for industrial and automotive applications.

Maximum Collector-Emitter Voltage: 55 V

With a high maximum voltage rating, this transistor can handle a wide range of voltage levels in amplification circuits, providing flexibility in design and compatibility with various power supply configurations.

Maximum Collector Current (IC): 1 A

Capable of handling high current levels, this transistor is suitable for power amplification applications where high current output is required.

Nominal Transition Frequency (fT): 150 MHz

With a high transition frequency, this transistor can provide fast response times and high bandwidth in amplifier circuits, ensuring accurate signal reproduction and minimal distortion.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) BC618ZL1 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Additional Features:

EUROPEAN PART NUMBER

Maximum Collector Current (IC):

1 A

Maximum Collector-Emitter Voltage:

55 V

Configuration:

Minimum DC Current Gain (hFE):

4000

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Polarity or Channel Type:

NPN

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

BC618ZL1 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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