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BC617-AMMO

NXP Semiconductors

BC617-AMMO by NXP Semiconductors

BC617-AMMO by NXP Semiconductors is a high-performance NPN Darlington transistor designed for switching applications. It features a max VCEsat of 1.1V, hFE of 10,000, and operates up to 150 °C. Ideal for efficient signal amplification in compact electronic devices.

Median Price

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Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 2,795 parts In-Stock

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2,795

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Digiode

USA . 1,522 parts In-Stock

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1,522

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Anansix

USA . 1,288 parts In-Stock

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1,288

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Distributors (Availability)

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Native Components

USA . 950 parts In-Stock

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$1.980

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950

$1.980

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Northwest PG Solutions

USA . 1,776 parts In-Stock

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$2.178

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1,776

$2.178

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One Stop Electronics

USA . 424 parts In-Stock

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$7.050

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424

$7.050

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UNI Independent Distributors

Spain . 8,039 parts In-Stock

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8,039

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Corphita

USA . 2,310 parts In-Stock

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Overview

Unlock unparalleled performance with the BC617-AMMO from NXP Semiconductors! This high-quality NPN Darlington transistor is designed for efficient switching applications, delivering exceptional reliability and a remarkable current gain. With its robust plastic/epoxy construction and ability to operate in extreme conditions up to 150 °C, it’s perfect for demanding electronic designs. Elevate your projects with NXP's trusted innovation and experience superior value and durability today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy ensures durability and protection against environmental factors, making it suitable for various applications.

Polarity or Channel Type: NPN

NPN transistors are widely used in switching and amplification applications, providing versatility in electronic circuits.

Configuration: DARLINGTON

The Darlington configuration offers high current gain, making it an excellent choice for applications requiring high sensitivity.

Transistor Application: SWITCHING

Designed for switching applications, this transistor can efficiently control larger currents and voltages.

Maximum VCEsat: 1.1 V

A low saturation voltage indicates efficient operation and reduced power loss during switching, enhancing overall performance.

Package Shape: ROUND

The round package shape allows for compact designs, making it suitable for space-constrained applications.

Terminal Form: THROUGH-HOLE

Through-hole terminals provide strong mechanical support and reliability, essential for robust electronic designs.

No. of Terminals: 3

With three terminals, this transistor is straightforward to integrate into various circuits, simplifying design processes.

Package Style (Meter): CYLINDRICAL

The cylindrical package style contributes to effective thermal dissipation, ensuring stable performance during operation.

Minimum DC Current Gain (hFE): 10000

A high current gain makes this transistor suitable for developing highly sensitive and efficient amplifiers.

Maximum Operating Temperature: 150 °C

A high maximum operating temperature allows this transistor to function in demanding environments, increasing its application range.

Maximum Collector-Emitter Voltage: 40 V

The ability to withstand high collector-emitter voltage makes this transistor suitable for a variety of high-voltage applications.

Transistor Element Material: SILICON

Silicon is a common material for transistors, offering good efficiency, reliability, and performance in electronic devices.

Maximum Collector Current (IC): 1 A

The capability to handle up to 1 A of collector current makes this transistor suitable for driving loads efficiently.

Terminal Position: BOTTOM

Bottom-positioned terminals facilitate easy soldering and PCB layout, improving manufacturing efficiency.

Nominal Transition Frequency (fT): 155 MHz

A high transition frequency indicates the transistor's ability to operate at high speeds, ideal for high-frequency applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) BC617-AMMO attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from NXP Semiconductors

Specs

Maximum Collector Current (IC):

1 A

Maximum Collector-Emitter Voltage:

40 V

Configuration:

Minimum DC Current Gain (hFE):

10000

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Polarity or Channel Type:

NPN

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum VCEsat:

1.1 V

Trade Compliance

BC617-AMMO Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

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