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BC618RL1

Onsemi

BC618RL1 by Onsemi

BC618RL1 by Onsemi is a NPN Darlington transistor with hFE of 4000, Vce of 55V, and Ic of 1A. Ideal for amplifier applications due to its high gain and temperature range up to 150 °C. Packaged in cylindrical shape with through-hole terminals for easy installation.

Median Price

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Lifecycle Status

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1k+

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Digiode

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Vyrian

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SupplyDigital Components

Austria . 7,872 parts In-Stock

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TANS Electronics

Latvia . 6,563 parts In-Stock

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Problanco Electronics

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QUARKTWIN TECHNOLOGY LTD

USA . 3,237 parts In-Stock

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Kulean Microsystems

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UHIMA Technologies

Türkiye . 718 parts In-Stock

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Native Components

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Corphita

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Northwest PG Solutions

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Corohmni

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Overview

Enhance your electronic projects with the BC618RL1 from Onsemi, a top-tier manufacturer known for delivering high-quality components. This Small Signal Bipolar Junction Transistor (BJT) in NPN Darlington configuration is perfect for amplifier applications. Its impressive DC current gain of 4000 ensures optimal performance, while the maximum operating temperature of 150 °C guarantees reliability. With a collector-emitter voltage of 55V and collector current of 1A, this transistor offers exceptional value and versatility. Upgrade your designs today with the BC618RL1 and experience superior performance like never before.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the transistor, ensuring long-lasting performance.

Polarity or Channel Type: NPN

Commonly used in amplification circuits and compatible with many applications.

Configuration: DARLINGTON

Offers high current gain and low saturation voltage, making it suitable for high-performance amplifier designs.

Transistor Application: AMPLIFIER

Specifically designed for amplification purposes, ensuring optimal performance in audio and signal processing applications.

Package Shape: ROUND

Simplifies installation and mounting in circular spaces, providing versatility in design.

Terminal Form: THROUGH-HOLE

Facilitates easy soldering and connection to circuit boards, making assembly and maintenance hassle-free.

No. of Terminals: 3

Suitable for basic amplifier circuits, simplifying the design and reducing complexity.

Package Style (Meter): CYLINDRICAL

Offers a compact and space-saving design, suitable for applications with limited space constraints.

Minimum DC Current Gain (hFE): 4000

Provides high amplification capability, ensuring accurate signal processing and output.

Maximum Operating Temperature: 150 °C

Withstands high temperatures, ensuring reliable operation in various environments.

Maximum Collector-Emitter Voltage: 55 V

Handles high voltage levels, making it suitable for a wide range of applications.

Transistor Element Material: SILICON

Known for its reliability and efficiency, ensuring consistent performance over time.

Maximum Collector Current (IC): 1 A

Supports high current levels, making it suitable for applications requiring a significant power output.

Terminal Finish: TIN LEAD

Prevents oxidation and ensures good electrical conductivity, enhancing the performance and lifespan of the transistor.

Terminal Position: BOTTOM

Facilitates easy installation and connection, improving the overall user experience during assembly.

Peak Reflow Temperature °C: 235

Withstands high-temperature soldering processes, ensuring reliable and secure connections.

Nominal Transition Frequency (fT): 150 MHz

Provides fast switching speeds, making it suitable for applications requiring high-frequency operation.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) BC618RL1 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Additional Features:

EUROPEAN PART NUMBER

Maximum Collector Current (IC):

1 A

Maximum Collector-Emitter Voltage:

55 V

Configuration:

Minimum DC Current Gain (hFE):

4000

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Peak Reflow Temperature (C):

235

Polarity or Channel Type:

NPN

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

BC618RL1 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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