Loading...

BC618RLRM

Onsemi

BC618RLRM by Onsemi

BC618RLRM by Onsemi is a NPN Darlington transistor with hFE of 4000, VCE of 55V, and IC of 1A. Ideal for applications requiring high current gain and voltage amplification in through-hole configurations. Suitable for use in electronic circuits operating up to 150 °C.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 2,134 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,134

-

-

-

-

Digiode

USA . 1,905 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,905

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Native Components

USA . 477 parts In-Stock

1+ parts

$2.081

100+ parts

-

1k+ parts

-

10k+ parts

-

477

$2.081

-

-

-

Northwest PG Solutions

USA . 1,523 parts In-Stock

1+ parts

$2.289

100+ parts

-

1k+ parts

-

10k+ parts

-

1,523

$2.289

-

-

-

SupplyDigital Components

Austria . 7,035 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

7,035

-

-

-

-

Problanco Electronics

Mexico . 3,315 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

3,315

-

-

-

-

Kulean Microsystems

USA . 2,506 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,506

-

-

-

-

Corphita

USA . 781 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

781

-

-

-

-

Corohmni

South Africa . 238 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

238

-

-

-

-

UHIMA Technologies

Türkiye . 90 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

90

-

-

-

-

TANS Electronics

Latvia . 3 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

3

-

-

-

-

Overview

Unlock the potential of your electronics with the BC618RLRM by Onsemi. Crafted with precision and expertise, this Small Signal Bipolar Junction Transistor (BJT) offers unparalleled performance and reliability. Whether you're enhancing audio systems or optimizing power management, this NPN Darlington transistor delivers exceptional results. With a high DC current gain of 4000 and a maximum operating temperature of 150 °C, the BC618RLRM is designed to exceed expectations. Trust in Onsemi's legacy of excellence and elevate your projects with this top-tier component.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy as the package body material provides good insulation properties and makes the transistor more durable and resistant to temperature variations.

Polarity or Channel Type: NPN

NPN type transistors are commonly used in amplification and switching applications, making this product suitable for a wide range of electronic circuits.

Configuration: DARLINGTON

The Darlington configuration provides high current gain and allows for high sensitivity in signal amplification applications.

Maximum Operating Temperature: 150 °C

With a maximum operating temperature of 150 °C, this transistor can withstand high temperatures without compromising its performance, making it suitable for various environments.

Maximum Collector-Emitter Voltage: 55 V

The high maximum collector-emitter voltage rating of 55V allows for safe operation in applications where higher voltages are involved.

Nominal Transition Frequency (fT): 150 MHz

The high nominal transition frequency of 150 MHz indicates that this transistor is capable of handling high-frequency signals efficiently, making it ideal for high-speed applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) BC618RLRM attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

1 A

Maximum Collector-Emitter Voltage:

55 V

Configuration:

Minimum DC Current Gain (hFE):

4000

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Polarity or Channel Type:

NPN

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

BC618RLRM Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

previous next
The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

Category top products 20

Authentic purchasing experiences

Partstack™ will investigate all reported instances of potential suspect/counterfeit part listings.

Similar products 20