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BC182BRLRE

Onsemi

BC182BRLRE by Onsemi

BC182BRLRE by Onsemi is a NPN BJT transistor with hFE of 180, VCE of 50V, and fT of 200MHz. Ideal for amplifier applications due to its single configuration and cylindrical package style. Operating at up to 150 °C, it offers a collector current of 0.1A in a through-hole terminal form.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 1,935 parts In-Stock

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Digiode

USA . 232 parts In-Stock

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232

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Kulean Microsystems

USA . 7,800 parts In-Stock

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7,800

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SupplyDigital Components

Austria . 6,046 parts In-Stock

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Problanco Electronics

Mexico . 3,638 parts In-Stock

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TANS Electronics

Latvia . 3,401 parts In-Stock

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Northwest PG Solutions

USA . 1,310 parts In-Stock

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Corphita

USA . 1,307 parts In-Stock

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UHIMA Technologies

Türkiye . 636 parts In-Stock

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636

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Native Components

USA . 511 parts In-Stock

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Corohmni

South Africa . 77 parts In-Stock

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Overview

Enhance your electronic projects with the BC182BRLRE by Onsemi. Manufactured with precision and quality in mind, this Small Signal Bipolar Junction Transistor (BJT) offers reliable performance for amplifier applications. With a high DC current gain of 180 and a maximum operating temperature of 150 °C, this NPN transistor provides excellent functionality and efficiency. Its durable plastic/epoxy package ensures long-lasting durability while its compact cylindrical design makes it easy to incorporate into various circuit designs. Trust Onsemi to deliver top-notch components that bring value and reliability to your projects.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides good protection for the transistor, making it durable and suitable for various applications.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplifiers and other circuits, offering good performance and versatility.

Configuration: SINGLE

Simplifies circuit design and layout, making it easier to integrate the transistor into a system.

Transistor Application: AMPLIFIER

Designed specifically for amplifier circuits, ensuring optimal performance in such applications.

Package Shape: ROUND

Round shape allows for efficient thermal dissipation, ensuring stable operation under high temperature conditions.

Terminal Form: THROUGH-HOLE

Through-hole terminals are easy to solder and provide strong mechanical connections, improving reliability.

No. of Terminals: 3

Simple 3-terminal design makes it easy to integrate into circuits, reducing complexity and potential for errors.

Package Style (Meter): CYLINDRICAL

Cylindrical package style is compact and space-saving, ideal for applications with limited space constraints.

Minimum DC Current Gain (hFE): 180

High DC current gain ensures efficient amplification of signals, improving overall performance.

Maximum Operating Temperature: 150 °C

High maximum operating temperature allows for reliable operation in a wide range of environmental conditions.

Maximum Collector-Emitter Voltage: 50 V

High maximum voltage rating ensures reliable operation and protection against voltage spikes.

Transistor Element Material: SILICON

Silicon is a common and reliable semiconductor material, ensuring stable and consistent performance.

Maximum Collector Current (IC): 0.1 A

Suitable for low-power applications, providing efficient current handling capabilities.

Terminal Finish: TIN LEAD

Tin lead finish provides excellent solderability and corrosion resistance, ensuring stable connections.

Terminal Position: BOTTOM

Bottom terminal position allows for easy PCB mounting and integration, improving installation efficiency.

Nominal Transition Frequency (fT): 200 MHz

High transition frequency allows for fast signal switching and high-frequency operation, ideal for amplification applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) BC182BRLRE attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

50 V

Configuration:

Minimum DC Current Gain (hFE):

180

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Polarity or Channel Type:

NPN

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

BC182BRLRE Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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