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BC182AG

Onsemi

BC182AG by Onsemi

BC182AG by Onsemi is a NPN BJT transistor with 3 terminals and a max power dissipation of 0.35W. With a min hFE of 120, it's ideal for amplifier applications, operating at up to 150°C. Its cylindrical package shape and silicon element make it suitable for various electronic designs.

Median Price

$0.062

Lifecycle Status

Suppliers In-Stock

7

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 34,995 parts In-Stock

1+ parts

-

100+ parts

$0.053

1k+ parts

$0.044

10k+ parts

$0.039

34,995

-

$0.053

$0.044

$0.039

DigiKey

USA . 34,995 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.070

34,995

-

-

-

$0.070

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 150 parts In-Stock

1+ parts

$0.039

100+ parts

-

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-

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-

150

$0.039

-

-

-

Digiode

USA . 847 parts In-Stock

1+ parts

$0.041

100+ parts

-

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847

$0.041

-

-

-

DigiKey Marketplace

USA . 34,995 parts In-Stock

1+ parts

-

100+ parts

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34,995

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-

-

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Vyrian

USA . 34,700 parts In-Stock

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34,700

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VNN

France . 25,875 parts In-Stock

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25,875

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-

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-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corohmni

South Africa . 379 parts In-Stock

1+ parts

$0.037

100+ parts

-

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-

10k+ parts

-

379

$0.037

-

-

-

Aranea Global

USA . 50 parts In-Stock

1+ parts

$0.038

100+ parts

-

1k+ parts

$0.036

10k+ parts

-

50

$0.038

-

$0.036

-

Corphita

USA . 194 parts In-Stock

1+ parts

$0.039

100+ parts

-

1k+ parts

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194

$0.039

-

-

-

Component Stockers USA

USA . 41,709 parts In-Stock

1+ parts

$0.040

100+ parts

$0.040

1k+ parts

$0.040

10k+ parts

$0.040

41,709

$0.040

$0.040

$0.040

$0.040

Ampacity Inc.

Singapore . 34,655 parts In-Stock

1+ parts

$0.080

100+ parts

-

1k+ parts

-

10k+ parts

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34,655

$0.080

-

-

-

Continental Prestige Electronics

USA . 34,995 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

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10k+ parts

$0.039

34,995

-

-

-

$0.039

TANS Electronics

Latvia . 8,052 parts In-Stock

1+ parts

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8,052

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Kulean Microsystems

USA . 7,660 parts In-Stock

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7,660

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Problanco Electronics

Mexico . 4,909 parts In-Stock

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4,909

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SupplyDigital Components

Austria . 2,065 parts In-Stock

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2,065

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UHIMA Technologies

Türkiye . 119 parts In-Stock

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119

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Overview

Unlock the potential of your electronic projects with the BC182AG by Onsemi. Manufactured with precision and expertise, this small signal bipolar junction transistor offers unparalleled performance in amplifier applications. With a minimum DC current gain of 120 and maximum operating temperature of 150°C, this NPN transistor provides reliability and efficiency. The package's cylindrical shape and through-hole terminal form make it easy to integrate into your designs. Trust Onsemi's reputation for quality and innovation, and elevate your projects with the BC182AG transistor.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material makes this transistor lightweight and durable, ideal for portable or handheld devices.

Polarity or Channel Type: NPN

The NPN configuration allows for easy integration into a variety of circuits, providing versatility in design options.

Configuration: SINGLE

A single configuration simplifies circuit design and layout, making this transistor easy to use for beginners and experienced engineers alike.

Transistor Application: AMPLIFIER

Designed specifically for amplifier applications, this transistor delivers reliable and high-quality signal amplification.

Package Shape: ROUND

The round package shape provides efficient heat dissipation, ensuring optimal performance even under heavy load conditions.

Terminal Form: THROUGH-HOLE

Through-hole terminals offer secure and stable connections, making this transistor suitable for soldering onto PCBs.

No. of Terminals: 3

With three terminals, this transistor offers flexibility in circuit connections and allows for various configurations.

Maximum Power Dissipation (Abs): 0.35 W

The high maximum power dissipation rating enables this transistor to handle heavy loads without overheating.

Package Style (Meter): CYLINDRICAL

The cylindrical package style offers easy handling and installation, making this transistor user-friendly.

Minimum DC Current Gain (hFE): 120

The minimum DC current gain ensures consistent and reliable performance in a wide range of operating conditions.

Maximum Operating Temperature: 150 °C

With a maximum operating temperature of 150°C, this transistor can withstand high temperatures without sacrificing performance.

Maximum Collector-Emitter Voltage: 50 V

The high maximum collector-emitter voltage rating provides robust protection against voltage spikes and surges.

Transistor Element Material: SILICON

The use of silicon as the transistor element material ensures high reliability and efficiency in signal amplification.

Maximum Collector Current (IC): 0.1 A

The high maximum collector current rating allows this transistor to handle heavy load currents with ease.

Terminal Finish: TIN SILVER COPPER

The terminal finish of tin, silver, and copper provides excellent conductivity and corrosion resistance for long-term reliability.

Terminal Position: BOTTOM

The bottom terminal position allows for easy PCB mounting and soldering, making installation hassle-free.

Peak Reflow Temperature °C: 260

The high peak reflow temperature rating of 260°C ensures reliable soldering and assembly processes.

Nominal Transition Frequency (fT): 200 MHz

With a high nominal transition frequency, this transistor is capable of handling high-speed signal processing and amplification.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) BC182AG attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

50 V

Configuration:

Minimum DC Current Gain (hFE):

120

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

TIN SILVER COPPER

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

BC182AG Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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