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BC182G

Onsemi

BC182G by Onsemi

BC182G by Onsemi is a NPN BJT transistor with 3 terminals, ideal for amplifier applications. It offers a min hFE of 80 and can handle a max IC of 0.1 A. With a max operating temperature of 150 °C and VCE of 50V, it is suitable for various electronic projects requiring high power dissipation up to 1W.

Median Price

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Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

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ComSIT Distribution GmbH

Germany . 5,000 parts In-Stock

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Vyrian

USA . 2,434 parts In-Stock

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Digiode

USA . 748 parts In-Stock

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Anansix

USA . 182 parts In-Stock

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Northwest PG Solutions

USA . 643 parts In-Stock

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$3.080

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QUARKTWIN TECHNOLOGY LTD

USA . 17,805 parts In-Stock

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SupplyDigital Components

Austria . 8,349 parts In-Stock

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Problanco Electronics

Mexico . 6,593 parts In-Stock

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Microchip USA

USA . 4,099 parts In-Stock

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Computer Components Inc. - USA

USA . 4,099 parts In-Stock

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Kulean Microsystems

USA . 3,990 parts In-Stock

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Corphita

USA . 2,359 parts In-Stock

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Corohmni

South Africa . 466 parts In-Stock

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Native Components

USA . 363 parts In-Stock

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UHIMA Technologies

Türkiye . 285 parts In-Stock

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TANS Electronics

Latvia . 82 parts In-Stock

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Overview

Enhance your electronic designs with the BC182G small signal transistor by Onsemi. As a leading manufacturer in the industry, Onsemi ensures top-quality products that meet the highest standards. Ideal for amplifier applications, this NPN transistor offers reliability and high-performance in a compact cylindrical package. With a minimum DC current gain of 80 and maximum power dissipation of 1W, the BC182G provides superior functionality while being easy to use. Upgrade your projects with this versatile component and experience the value and benefits it brings to your creations.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

PLASTIC/EPOXY material is durable and lightweight, making the product easy to handle and install.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification circuits, making this product suitable for amplifier applications.

Configuration: SINGLE

Single configuration simplifies circuit design and integration, making it easier to use in various applications.

Transistor Application: AMPLIFIER

Designed specifically for amplifier applications, ensuring optimal performance in amplification tasks.

Package Shape: ROUND

Round shape is compact and space-saving, ideal for tight environments where space is limited.

Terminal Form: THROUGH-HOLE

Through-hole terminals provide secure connections and ease of soldering during installation.

No. of Terminals: 3

Three terminals offer flexibility in circuit configurations and allow for easy connection to other components.

Maximum Power Dissipation (Abs): 1 W

High power dissipation capability ensures reliable operation and prevents overheating in demanding applications.

Package Style (Meter): CYLINDRICAL

Cylindrical package style offers a compact and robust design, suitable for various mounting options.

Minimum DC Current Gain (hFE): 80

High DC current gain provides efficient signal amplification, ensuring accurate and reliable performance.

Maximum Operating Temperature: 150 °C

High maximum operating temperature allows the transistor to function in a wide range of environmental conditions.

Maximum Collector-Emitter Voltage: 50 V

High collector-emitter voltage rating enables the transistor to handle higher voltages without breakdown.

Transistor Element Material: SILICON

Silicon material ensures excellent electrical properties and reliability for long-term use.

Maximum Collector Current (IC): 0.1 A

Sufficient collector current rating allows the transistor to handle moderate current loads in various applications.

Terminal Finish: TIN SILVER COPPER

Tin silver copper terminal finish provides excellent conductivity and corrosion resistance for reliable connections.

Terminal Position: BOTTOM

Bottom terminal position simplifies PCB layout and soldering, ensuring easy integration into circuit designs.

Peak Reflow Temperature °C: 260

High peak reflow temperature tolerance allows for safe soldering and handling during manufacturing processes.

Nominal Transition Frequency (fT): 200 MHz

High transition frequency ensures fast switching speeds and high-frequency response in amplification applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) BC182G attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

50 V

Configuration:

Minimum DC Current Gain (hFE):

80

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

1 W

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

TIN SILVER COPPER

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

BC182G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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