Loading...

BC182ARL

Onsemi

BC182ARL by Onsemi

BC182ARL by Onsemi is a NPN BJT transistor with hFE of 120, VCE of 50V, and fT of 200MHz. Ideal for amplifier applications due to its single configuration and cylindrical package style. Operates at temperatures up to 150 °C with a collector current of 0.1A.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 1,793 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,793

-

-

-

-

Vyrian

USA . 1,546 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,546

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Native Components

USA . 434 parts In-Stock

1+ parts

$347.690

100+ parts

$340.736

1k+ parts

$337.259

10k+ parts

$333.782

434

$347.690

$340.736

$337.259

$333.782

Northwest PG Solutions

USA . 690 parts In-Stock

1+ parts

$382.459

100+ parts

-

1k+ parts

-

10k+ parts

-

690

$382.459

-

-

-

SupplyDigital Components

Austria . 6,996 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

6,996

-

-

-

-

Problanco Electronics

Mexico . 6,079 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

6,079

-

-

-

-

TANS Electronics

Latvia . 4,245 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

4,245

-

-

-

-

Kulean Microsystems

USA . 692 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

692

-

-

-

-

Corphita

USA . 566 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

566

-

-

-

-

Corohmni

South Africa . 435 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

435

-

-

-

-

UHIMA Technologies

Türkiye . 30 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

30

-

-

-

-

Overview

Elevate your electronic projects with the BC182ARL by Onsemi, a high-quality Small Signal Bipolar Junction Transistor designed for amplifier applications. Manufactured by the trusted name in semiconductor technology, Onsemi, this NPN transistor offers exceptional performance and reliability. With a minimum DC current gain of 120 and maximum collector-emitter voltage of 50V, this transistor provides excellent amplification capabilities. Whether you're a hobbyist or a professional, the BC182ARL is the perfect choice for enhancing your circuit designs. Unlock the potential of your projects with this versatile and efficient transistor today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

PLASTIC/EPOXY material provides durability and protection for the transistor, making it suitable for various applications.

Polarity or Channel Type: NPN

NPN type transistors are commonly used in amplification circuits, making this transistor ideal for amplifier applications.

Configuration: SINGLE

Single configuration simplifies circuit design and integration, making it easier to use in amplifier circuits.

Maximum Operating Temperature: 150 °C

High maximum operating temperature allows for reliable performance in a wide range of environmental conditions.

Maximum Collector-Emitter Voltage: 50 V

High maximum collector-emitter voltage rating provides flexibility in circuit design and compatibility with various voltage levels.

Nominal Transition Frequency (fT): 200 MHz

High nominal transition frequency allows for high-speed switching and amplification, making it suitable for demanding applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) BC182ARL attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Additional Features:

EUROPEAN PART NUMBER

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

50 V

Configuration:

Minimum DC Current Gain (hFE):

120

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Polarity or Channel Type:

NPN

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

BC182ARL Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

previous next
The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

Category top products 20

Authentic purchasing experiences

Partstack™ will investigate all reported instances of potential suspect/counterfeit part listings.

Similar products 20