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BC182BZL1

Onsemi

BC182BZL1 by Onsemi

BC182BZL1 by Onsemi is a NPN BJT transistor with hFE of 180, VCE of 50V, and fT of 200MHz. Ideal for amplifier applications due to its single configuration and cylindrical package style. Operates at up to 150 °C with a collector current of 0.1A.

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Vyrian

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Northwest PG Solutions

USA . 341 parts In-Stock

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$2.970

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Kulean Microsystems

USA . 7,892 parts In-Stock

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SupplyDigital Components

Austria . 6,563 parts In-Stock

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TANS Electronics

Latvia . 5,898 parts In-Stock

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Corphita

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Problanco Electronics

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Corohmni

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Native Components

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UHIMA Technologies

Türkiye . 281 parts In-Stock

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Overview

Enhance your electronic projects with the BC182BZL1 by Onsemi, a high-quality NPN small signal bipolar junction transistor perfect for amplifier applications. Manufactured by the reputable Onsemi, this transistor boasts a minimum DC current gain of 180 and a maximum operating temperature of 150 °C, ensuring reliable performance. With a maximum collector-emitter voltage of 50V and a nominal transition frequency of 200 MHz, this transistor offers exceptional value and benefits for all your amplifier needs. Upgrade your circuits with the BC182BZL1 and experience superior quality and functionality.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material used for the package body provides good thermal conductivity and insulation, making the transistor suitable for high temperature applications.

Polarity or Channel Type: NPN

NPN transistors exhibit high current gain and low current leakage, making them suitable for general purpose amplification applications.

Configuration: SINGLE

The single configuration simplifies circuit design and ensures straightforward connectivity in amplifier applications.

Transistor Application: AMPLIFIER

Designed specifically for amplifier applications, this transistor offers excellent performance and stability in amplifying signals.

Package Shape: ROUND

The round package shape allows for efficient heat dissipation and compact placement on circuit boards.

Terminal Form: THROUGH-HOLE

The through-hole terminals provide secure connections and ease of soldering in circuit assembly.

No. of Terminals: 3

With 3 terminals, this transistor is easy to integrate into circuit designs and offers flexibility in connectivity.

Package Style (Meter): CYLINDRICAL

The cylindrical package style ensures uniform distribution of heat and mechanical strength for reliable performance.

Minimum DC Current Gain (hFE): 180

A minimum DC current gain of 180 indicates good amplification capability and stable operation in various circuit configurations.

Maximum Operating Temperature: 150 °C

With a maximum operating temperature of 150 °C, this transistor can withstand high temperature environments without compromising performance.

Maximum Collector-Emitter Voltage: 50 V

The maximum collector-emitter voltage of 50 V allows for safe operation in low to medium voltage applications.

Transistor Element Material: SILICON

Silicon-based transistors offer high performance, low noise, and reliability, making them ideal for a wide range of applications.

Maximum Collector Current (IC): 0.1 A

With a maximum collector current of 0.1 A, this transistor is suitable for low power amplification and signal processing applications.

Terminal Finish: TIN LEAD

The tin lead terminal finish provides good solderability and corrosion resistance for long-lasting connections.

Terminal Position: BOTTOM

The bottom terminal position allows for easy mounting on circuit boards and efficient heat dissipation.

Nominal Transition Frequency (fT): 200 MHz

A high nominal transition frequency of 200 MHz indicates excellent high-frequency performance for signal amplification and processing.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) BC182BZL1 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Additional Features:

EUROPEAN PART NUMBER

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

50 V

Configuration:

Minimum DC Current Gain (hFE):

180

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Polarity or Channel Type:

NPN

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

BC182BZL1 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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