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BC182BRLRA

Onsemi

BC182BRLRA by Onsemi

BC182BRLRA by Onsemi is a NPN BJT transistor with hFE of 180, VCE of 50V, and fT of 200MHz. Ideal for amplifier applications due to its single configuration and cylindrical package style. Operates at temperatures up to 150 °C with a collector current of 0.1A.

Median Price

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Lifecycle Status

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2

In-Stock Inventory

1k+

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Vyrian

USA . 2,327 parts In-Stock

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Digiode

USA . 879 parts In-Stock

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Problanco Electronics

Mexico . 6,710 parts In-Stock

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SupplyDigital Components

Austria . 6,019 parts In-Stock

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Kulean Microsystems

USA . 4,754 parts In-Stock

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TANS Electronics

Latvia . 2,717 parts In-Stock

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Northwest PG Solutions

USA . 1,692 parts In-Stock

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Corphita

USA . 1,504 parts In-Stock

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Native Components

USA . 860 parts In-Stock

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UHIMA Technologies

Türkiye . 456 parts In-Stock

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Corohmni

South Africa . 439 parts In-Stock

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Overview

Enhance your electronic projects with the BC182BRLRA by Onsemi, a high-quality NPN small signal bipolar junction transistor designed for amplifier applications. Manufactured by industry leader Onsemi, this transistor offers exceptional performance and reliability. Its plastic/epoxy package body ensures durability while its maximum operating temperature of 150 °C allows for versatile use. With a minimum DC current gain of 180 and a maximum collector-emitter voltage of 50V, the BC182BRLRA provides outstanding value and benefits to customers seeking superior components for their projects. Upgrade your designs with this top-of-the-line transistor today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy package ensures a durable and reliable housing for the transistor, making it suitable for various applications.

Polarity or Channel Type: NPN

The NPN configuration allows for easy integration with other NPN transistors and components in circuits.

Configuration: SINGLE

The single configuration simplifies circuit design and makes it easier to use in amplifier applications.

Transistor Application: AMPLIFIER

Designed specifically for amplifier applications, ensuring optimal performance in amplification circuits.

Package Shape: ROUND

The round package shape provides a compact design that can easily fit into various circuit layouts.

Terminal Form: THROUGH-HOLE

The through-hole terminal form enables easy PCB mounting and soldering for a secure connection.

No. of Terminals: 3

With 3 terminals, this transistor is versatile and can be used in a variety of circuit configurations.

Package Style (Meter): CYLINDRICAL

The cylindrical package style provides a robust and space-saving design for efficient circuit integration.

Minimum DC Current Gain (hFE): 180

The high minimum DC current gain ensures reliable amplification performance in various circuit configurations.

Maximum Operating Temperature: 150 °C

With a maximum operating temperature of 150 °C, this transistor can withstand high temperatures without compromising performance.

Maximum Collector-Emitter Voltage: 50 V

The high maximum collector-emitter voltage rating allows for a wide range of voltage applications.

Transistor Element Material: SILICON

Silicon material provides efficient performance and reliability in various amplifier applications.

Maximum Collector Current (IC): 0.1 A

With a maximum collector current of 0.1 A, this transistor can handle moderate current loads in amplifier circuits.

Terminal Finish: TIN LEAD

The tin lead terminal finish ensures a stable connection and prevents oxidation for long-term reliability.

Terminal Position: BOTTOM

The bottom terminal position simplifies PCB layout and soldering for easy integration into circuits.

Nominal Transition Frequency (fT): 200 MHz

With a nominal transition frequency of 200 MHz, this transistor offers high-speed performance in amplifier applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) BC182BRLRA attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

50 V

Configuration:

Minimum DC Current Gain (hFE):

180

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Polarity or Channel Type:

NPN

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

BC182BRLRA Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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