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BC182BRLRM

Onsemi

BC182BRLRM by Onsemi

BC182BRLRM by Onsemi is a NPN BJT transistor with hFE of 180, VCE of 50V, and fT of 200MHz. Ideal for amplifier applications due to its single configuration and cylindrical package style. Operates at up to 150 °C with a collector current of 0.1A.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Digiode

USA . 2,129 parts In-Stock

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Vyrian

USA . 1,999 parts In-Stock

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Native Components

USA . 863 parts In-Stock

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$6.520

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863

$6.520

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Problanco Electronics

Mexico . 8,335 parts In-Stock

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SupplyDigital Components

Austria . 6,506 parts In-Stock

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TANS Electronics

Latvia . 5,503 parts In-Stock

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Kulean Microsystems

USA . 2,679 parts In-Stock

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Corphita

USA . 2,330 parts In-Stock

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Northwest PG Solutions

USA . 720 parts In-Stock

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$6.390

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720

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UHIMA Technologies

Türkiye . 523 parts In-Stock

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Corohmni

South Africa . 385 parts In-Stock

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Overview

Discover the power of the BC182BRLRM by Onsemi, a top-quality Small Signal Bipolar Junction Transistor designed for amplification applications. Manufactured with precision and expertise, this NPN transistor offers unmatched reliability and performance. Whether you're looking to enhance audio signals or boost electronic circuits, this product delivers superior results. With a high DC current gain of 180 and a maximum operating temperature of 150 °C, the BC182BRLRM is a versatile and efficient choice for your projects. Trust Onsemi for cutting-edge technology and exceptional value in every component.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the transistor, ensuring a longer lifespan.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplifiers and other applications due to their versatility and efficiency.

Configuration: SINGLE

Simplifies circuit design and offers ease of use for applications requiring a single transistor.

Transistor Application: AMPLIFIER

Specifically designed for amplifier applications, ensuring optimal performance in audio or signal amplification.

Package Shape: ROUND

Allows for easy mounting and integration into circular or cylindrical designs.

Terminal Form: THROUGH-HOLE

Facilitates easy soldering and connection to a circuit board or other components.

No. of Terminals: 3

Simple and straightforward connection with only three terminals required for operation.

Package Style (Meter): CYLINDRICAL

Fits well in cylindrical housings or packages, making it suitable for various compact designs.

Minimum DC Current Gain (hFE): 180

Provides high amplification capability for the transistor, ensuring efficient signal amplification.

Maximum Operating Temperature: 150 °C

Can operate reliably at high temperatures, suitable for applications where heat dissipation is a concern.

Maximum Collector-Emitter Voltage: 50 V

With a high maximum voltage rating, the transistor can handle a wide range of voltage levels.

Transistor Element Material: SILICON

Silicon transistors offer excellent performance and reliability in various applications.

Maximum Collector Current (IC): 0.1 A

Capable of handling moderate current loads, suitable for many applications.

Terminal Finish: TIN LEAD

Provides a reliable and durable terminal finish for soldering and electrical connections.

Terminal Position: BOTTOM

Facilitates easy mounting and connection in circuit designs with components located on the bottom side.

Nominal Transition Frequency (fT): 200 MHz

Suitable for high-frequency applications such as RF amplifiers or other signal processing circuits.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) BC182BRLRM attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

50 V

Configuration:

Minimum DC Current Gain (hFE):

180

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Polarity or Channel Type:

NPN

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

BC182BRLRM Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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