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BC182ARLRM

Onsemi

BC182ARLRM by Onsemi

BC182ARLRM by Onsemi is a NPN BJT transistor with hFE of 120, VCE of 50V, and fT of 200MHz. Ideal for amplifier applications due to its single configuration and cylindrical package style. Operates at temperatures up to 150 °C with a collector current of 0.1A.

Median Price

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Lifecycle Status

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2

In-Stock Inventory

1k+

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Digiode

USA . 1,445 parts In-Stock

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Vyrian

USA . 1,139 parts In-Stock

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Native Components

USA . 441 parts In-Stock

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$1.140

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Northwest PG Solutions

USA . 1,570 parts In-Stock

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$1.254

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TANS Electronics

Latvia . 7,606 parts In-Stock

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Problanco Electronics

Mexico . 6,416 parts In-Stock

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Kulean Microsystems

USA . 4,691 parts In-Stock

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SupplyDigital Components

Austria . 1,440 parts In-Stock

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UHIMA Technologies

Türkiye . 540 parts In-Stock

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Corphita

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Corohmni

South Africa . 91 parts In-Stock

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Overview

Enhance your electronic projects with the BC182ARLRM Small Signal Bipolar Junction Transistor by Onsemi. As a trusted manufacturer, Onsemi ensures top-notch quality and reliability in all their products. Ideal for amplifier applications, this NPN transistor offers a DC current gain of 120, a maximum collector-emitter voltage of 50V, and a nominal transition frequency of 200MHz. With its cylindrical package shape and through-hole terminal form, the BC182ARLRM is easy to use and versatile for various projects. Upgrade your circuits today with the high performance and value that this transistor provides.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic package offers good durability and protection for the transistor, making it suitable for various operating conditions.

Polarity or Channel Type: NPN

NPN transistors are commonly used for amplification applications, making this transistor suitable for amplifier circuits.

Configuration: SINGLE

Single configuration simplifies circuit design and makes it easier to incorporate into electronic circuits.

Transistor Application: AMPLIFIER

Specifically designed for amplifier applications, ensuring optimal performance in amplification circuits.

Maximum Operating Temperature: 150 °C

With a high maximum operating temperature, this transistor can withstand elevated temperatures in various applications.

Maximum Collector-Emitter Voltage: 50 V

Capable of handling up to 50 volts, making it suitable for low to medium voltage applications.

Nominal Transition Frequency (fT): 200 MHz

High transition frequency allows for fast switching speeds and high-frequency operation, ideal for high-performance applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) BC182ARLRM attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

50 V

Configuration:

Minimum DC Current Gain (hFE):

120

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Polarity or Channel Type:

NPN

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

BC182ARLRM Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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