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BC182ARLRE

Onsemi

BC182ARLRE by Onsemi

BC182ARLRE by Onsemi is a NPN BJT transistor with hFE of 120, VCE of 50V, and fT of 200MHz. Ideal for amplifier applications due to its single configuration and cylindrical package style. Operates at temperatures up to 150 °C with a collector current of 0.1A.

Median Price

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Lifecycle Status

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2

In-Stock Inventory

1k+

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Vyrian

USA . 2,192 parts In-Stock

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Digiode

USA . 1,794 parts In-Stock

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1,794

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Native Components

USA . 960 parts In-Stock

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$94.750

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$90.960

960

$94.750

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$90.960

Northwest PG Solutions

USA . 112 parts In-Stock

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$104.225

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112

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SupplyDigital Components

Austria . 6,553 parts In-Stock

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Kulean Microsystems

USA . 5,835 parts In-Stock

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Problanco Electronics

Mexico . 1,794 parts In-Stock

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TANS Electronics

Latvia . 1,063 parts In-Stock

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Corphita

USA . 900 parts In-Stock

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900

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UHIMA Technologies

Türkiye . 724 parts In-Stock

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Corohmni

South Africa . 315 parts In-Stock

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Overview

Experience the exceptional performance of the BC182ARLRE by Onsemi, a top-tier manufacturer known for delivering high-quality Small Signal Bipolar Junction Transistors (BJT). This NPN transistor offers a versatile application in amplifiers, guaranteeing reliable and efficient operation. With a minimum DC current gain of 120 and a maximum collector-emitter voltage of 50V, this transistor is a game-changer in the electronics industry. Upgrade your projects with the BC182ARLRE and enjoy unparalleled value, benefits, and advantages that only Onsemi can provide.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material provides durability and protection for the internal components of the transistor, making it robust and long-lasting.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification circuits, which makes this transistor suitable for amplifier applications.

Configuration: SINGLE

The single configuration simplifies the setup and integration of the transistor into circuits, making it easy to use and suitable for various amplification applications.

Transistor Application: AMPLIFIER

Designed specifically for amplifier applications, this transistor is optimized for signal amplification with high fidelity and minimal distortion.

Terminal Form: THROUGH-HOLE

The through-hole terminal form allows for easy and secure soldering onto circuit boards, ensuring reliable connections in amplifier circuits.

No. of Terminals: 3

With three terminals, this transistor can be easily integrated into amplifier circuits with appropriate connections for base, emitter, and collector, ensuring proper functionality.

Maximum Operating Temperature: 150 °C

With a high maximum operating temperature of 150 °C, this transistor can withstand elevated temperatures in amplifier applications without compromising performance.

Maximum Collector-Emitter Voltage: 50 V

The maximum collector-emitter voltage of 50V allows for safe operation in amplifier circuits with varying voltage requirements, ensuring reliable performance.

Minimum DC Current Gain (hFE): 120

The minimum DC current gain of 120 ensures stable and consistent amplification of signals in amplifier circuits, providing reliable performance.

Transistor Element Material: SILICON

Silicon is a common and reliable material used in transistor elements, providing high performance and durability for amplifier applications.

Maximum Collector Current (IC): 0.1 A

With a maximum collector current of 0.1A, this transistor can handle moderate current levels in amplifier circuits, ensuring safe and efficient operation.

Terminal Finish: TIN LEAD

The tin-lead terminal finish provides excellent solderability and conductivity, ensuring secure connections in amplifier circuits for optimal performance.

Terminal Position: BOTTOM

The bottom terminal position allows for easy installation and secure placement of the transistor in amplifier circuits, ensuring proper functionality and connectivity.

Nominal Transition Frequency (fT): 200 MHz

With a nominal transition frequency of 200MHz, this transistor can amplify signals with high frequency components, making it suitable for a wide range of amplifier applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) BC182ARLRE attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

50 V

Configuration:

Minimum DC Current Gain (hFE):

120

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Polarity or Channel Type:

NPN

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

BC182ARLRE Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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