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AMIS-52150

Onsemi

AMIS-52150 by Onsemi

AMIS-52150 by Onsemi is a telecom interface IC with 20 terminals, operating at 0-50 °C. It has a supply voltage of 3V and max current of 25mA. This rectangular-shaped IC in plastic/epoxy package is surface mountable and suitable for various communication applications.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

< 1k

Distributors (In-Stock)

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Digiode

USA . 300 parts In-Stock

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300

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Vyrian

USA . 154 parts In-Stock

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154

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Distributors (Availability)

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Native Components

USA . 186 parts In-Stock

1+ parts

$0.068

100+ parts

-

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$0.065

186

$0.068

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$0.065

Northwest PG Solutions

USA . 429 parts In-Stock

1+ parts

$0.075

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$0.066

429

$0.075

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$0.066

SupplyDigital Components

Austria . 7,797 parts In-Stock

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7,797

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Problanco Electronics

Mexico . 3,240 parts In-Stock

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3,240

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TANS Electronics

Latvia . 2,407 parts In-Stock

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2,407

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Corphita

USA . 2,349 parts In-Stock

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2,349

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UHIMA Technologies

Türkiye . 891 parts In-Stock

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891

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Corohmni

South Africa . 397 parts In-Stock

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Kulean Microsystems

USA . 291 parts In-Stock

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291

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Overview

Unlock the power of seamless communication with the AMIS-52150 by Onsemi. Crafted with precision and expertise, this innovative telecom interface IC offers unparalleled quality and reliability. Perfect for a wide range of applications, this product ensures smooth operation and enhanced performance. Experience the value and benefits of this cutting-edge technology, providing customers with a competitive edge in today's fast-paced market. Elevate your projects with the AMIS-52150 and discover a world of possibilities.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/epoxy materials are lightweight and durable, making the product easy to handle and resistant to damage during handling or usage.

Surface Mount: YES

Surface mount technology allows for easy and efficient integration of the IC into electronic circuit boards, saving space and reducing assembly time.

Power Supplies (V): 3

Operating at 3 volts allows for efficient power consumption and compatibility with a wide range of devices.

Maximum Operating Temperature: 50 °C

With a high maximum operating temperature, this IC can withstand extended periods of use without overheating or malfunctioning.

Terminal Position: DUAL

Dual terminal position provides flexibility in connecting the IC to other components, allowing for various circuit configurations.

Technical Specifications

Other Function Telecom Interface ICs AMIS-52150 attributes and parameters. Explore more Other Function Telecom Interface ICs devices from Onsemi

Specs

JESD-30 Code:

R-PDSO-G20

No. of Terminals:

20

Maximum Operating Temperature:

50 Cel

Minimum Operating Temperature:

0 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

SSOP20,.3

Package Shape:

Package Style (Meter):

SMALL OUTLINE, SHRINK PITCH

Power Supplies (V):

3

Qualification:

Not Qualified

Sub-Category:

Other Telecom ICs

Maximum Supply Current:

25 mA

Nominal Supply Voltage:

3 V

Surface Mount:

YES

Temperature Grade:

Terminal Form:

Terminal Pitch:

.635 mm

Terminal Position:

DUAL

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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