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AMIS49587C5871G

Onsemi

AMIS49587C5871G by Onsemi

AMIS49587C5871G by Onsemi is a 28-terminal telecom IC with 3.3V supply, operating b/w -40 to 80 °C. It features J BEND terminals, PLASTIC/EPOXY body, and is surface mountable in a square chip carrier package. Ideal for telecom circuits requiring low power consumption and compact design.

Median Price

$14.900

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Chip1Stop

Japan . 1 parts In-Stock

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$14.900

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1

$14.900

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Digiode

USA . 1,020 parts In-Stock

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$14.155

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$14.155

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Chip Stock

USA . 70,000 parts In-Stock

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Vyrian

USA . 9,071 parts In-Stock

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Distributors (Availability)

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Corphita

USA . 928 parts In-Stock

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$13.410

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928

$13.410

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Corohmni

South Africa . 336 parts In-Stock

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$14.900

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AZTECH Wire

Italy . 232 parts In-Stock

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$16.410

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Problanco Electronics

Mexico . 7,915 parts In-Stock

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TANS Electronics

Latvia . 5,259 parts In-Stock

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SupplyDigital Components

Austria . 4,885 parts In-Stock

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Microchip USA

USA . 2,519 parts In-Stock

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Kepictronics

USA . 1,048 parts In-Stock

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Native Components

USA . 991 parts In-Stock

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$4.578

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991

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$4.578

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Northwest PG Solutions

USA . 848 parts In-Stock

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$4.626

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848

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$4.626

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UHIMA Technologies

Türkiye . 717 parts In-Stock

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Kulean Microsystems

USA . 374 parts In-Stock

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Perfect Parts

USA . 118 parts In-Stock

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Overview

Discover the AMIS49587C5871G by Onsemi, a top-tier manufacturer known for its high-quality products. This Telecom Interface IC offers unparalleled performance and reliability in various applications. With a package style of chip carrier and a terminal finish of tin, this product ensures seamless integration and optimal functionality. Experience the value of efficient power supplies at 3.3V, while enjoying the benefits of a compact design and wide operating temperature range. Elevate your projects with the AMIS49587C5871G's superior quality and advanced features, making it the ideal choice for telecom circuits.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material provides durability and protection for the integrated circuits within the package.

Surface Mount: YES

Being surface mountable makes it easier to integrate this telecom interface IC into various electronic devices and PCB designs.

Power Supplies (V): 3.3

Operates at a standard voltage of 3.3V, making it compatible with a wide range of power supply systems.

Maximum Operating Temperature: 80 °C

Can operate efficiently in a wide range of temperatures, ensuring reliability in different environmental conditions.

Terminal Finish: TIN

The tin terminal finish provides good conductivity and solderability for easy integration into circuits during manufacturing.

Nominal Supply Voltage: 3.3 V

The 3.3V nominal supply voltage is a common standard in electronics, allowing for easy compatibility with existing systems.

Technical Specifications

Other Function Telecom Interface ICs AMIS49587C5871G attributes and parameters. Explore more Other Function Telecom Interface ICs devices from Onsemi

Specs

JESD-30 Code:

S-PQCC-J28

JESD-609 Code:

e3

Length:

11.506 mm

Moisture Sensitivity Level (MSL):

3

No. of Functions:

1

No. of Terminals:

28

Maximum Operating Temperature:

80 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

LDCC28,.5SQ

Package Shape:

Package Style (Meter):

CHIP CARRIER

Peak Reflow Temperature (C):

260

Power Supplies (V):

3.3

Qualification:

Not Qualified

Maximum Seated Height:

4.572 mm

Sub-Category:

Modems

Maximum Supply Current:

.08 mA

Nominal Supply Voltage:

3.3 V

Surface Mount:

YES

Telecom IC Type:

Temperature Grade:

Terminal Finish:

TIN

Terminal Form:

Terminal Pitch:

1.27 mm

Terminal Position:

QUAD

Maximum Time At Peak Reflow Temperature (s):

30

Width:

11.506 mm

Trade Compliance

AMIS49587C5871G Telecommunications trade compliance attributes, and parameters.

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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