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3EZ330D5RR1

Onsemi

3EZ330D5RR1 by Onsemi

3EZ330D5RR1 by Onsemi is a Zener diode with a nominal reference voltage of 330V and max power dissipation of 1W. It operates in temperatures ranging from -65 to 200 °C, making it suitable for various applications requiring stable voltage regulation. With a max dynamic impedance of 2200 ohm, this diode is ideal for use in electronic circuits that demand precise voltage control.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Vyrian

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Digiode

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Kulean Microsystems

USA . 6,227 parts In-Stock

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SupplyDigital Components

Austria . 5,444 parts In-Stock

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Problanco Electronics

Mexico . 4,012 parts In-Stock

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Northwest PG Solutions

USA . 1,018 parts In-Stock

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TANS Electronics

Latvia . 849 parts In-Stock

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Corohmni

South Africa . 303 parts In-Stock

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Native Components

USA . 169 parts In-Stock

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UHIMA Technologies

Türkiye . 165 parts In-Stock

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Corphita

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Overview

Enhance your electronic projects with the 3EZ330D5RR1 Zener Diode by Onsemi. Known for their superior quality and reliability, Onsemi products are trusted by professionals worldwide. This Zener diode is perfect for voltage regulation and protection applications, offering precise voltage control and increased circuit stability. With a high maximum power dissipation of 1W and a nominal reference voltage of 330V, this diode ensures optimal performance in a variety of scenarios. Upgrade your projects with the 3EZ330D5RR1 and experience the value and benefits that Onsemi products have to offer.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides good heat dissipation and protection for the diode, ensuring its longevity and reliability.

Working Test Current: 2.3 mA

The low working test current means lower power consumption, making the product energy-efficient.

Maximum Voltage Tolerance: 5 %

The tight voltage tolerance ensures consistent and reliable performance in various applications.

Maximum Operating Temperature: 200 °C

With a high maximum operating temperature, this zener diode can withstand harsh environmental conditions.

Maximum Dynamic Impedance: 2200 ohm

The low dynamic impedance allows for stable and accurate regulation of voltage across the diode.

Nominal Reference Voltage: 330 V

This high reference voltage makes it suitable for applications requiring precise voltage regulation.

Technical Specifications

Zener Diodes 3EZ330D5RR1 attributes and parameters. Explore more Zener Diodes devices from Onsemi

Specs

Case Connection:

ISOLATED

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Dynamic Impedance:

2200 ohm

JEDEC-95 Code:

DO-41

JESD-30 Code:

O-PALF-W2

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

200 Cel

Minimum Operating Temperature:

-65 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

LONG FORM

Polarity:

UNIDIRECTIONAL

Maximum Power Dissipation:

1 W

Qualification:

Not Qualified

Nominal Reference Voltage:

330 V

Sub-Category:

Voltage Reference Diodes

Surface Mount:

NO

Technology:

ZENER

Terminal Finish:

TIN LEAD

Terminal Form:

Terminal Position:

Maximum Voltage Tolerance:

5 %

Working Test Current:

2.3 mA

Trade Compliance

3EZ330D5RR1 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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