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3EZ330D5

Onsemi

3EZ330D5 by Onsemi

3EZ330D5 by Onsemi is a Zener diode with 330V nominal reference voltage, 2.3mA test current, and 2200 ohm dynamic impedance. It is used in applications requiring stable voltage regulation such as power supplies and voltage references due to its unidirectional polarity and silicon diode element material.

Median Price

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Lifecycle Status

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2

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1k+

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Digiode

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Vyrian

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Native Components

USA . 873 parts In-Stock

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Northwest PG Solutions

USA . 1,580 parts In-Stock

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Kulean Microsystems

USA . 6,174 parts In-Stock

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SupplyDigital Components

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Problanco Electronics

Mexico . 5,036 parts In-Stock

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TANS Electronics

Latvia . 3,524 parts In-Stock

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Corphita

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UHIMA Technologies

Türkiye . 622 parts In-Stock

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Corohmni

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Overview

Unlock the power of precision with the 3EZ330D5 Zener Diode by Onsemi. Manufactured by a trusted industry leader, this single-config diode offers unparalleled quality and reliability. Ideal for a wide range of applications, this diode provides a nominal reference voltage of 330V with a maximum voltage tolerance of 5%. With a maximum power dissipation of 1W and a maximum operating temperature of 150 °C, this diode ensures optimal performance in any environment. Trust Onsemi's expertise and experience to deliver unmatched value and benefits to your projects.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material makes the diode lightweight and durable, making it suitable for various applications.

Working Test Current: 2.3 mA

This low working test current ensures efficient performance and helps in conserving energy during operation.

Package Shape: ROUND

The round shape allows for easy mounting and installation in various electronic circuits.

Maximum Voltage Tolerance: 5 %

The tight voltage tolerance of 5% ensures accurate and reliable voltage regulation in different scenarios.

Maximum Operating Temperature: 150 °C

With a high maximum operating temperature of 150 °C, this diode can withstand elevated temperatures without compromising performance.

Maximum Dynamic Impedance: 2200 ohm

The low dynamic impedance of 2200 ohm ensures stable and consistent performance under varying load conditions.

Terminal Finish: Tin (Sn)

The tin terminal finish provides good conductivity and solderability, making it easy to integrate the diode into circuits.

Maximum Power Dissipation: 1 W

The high power dissipation of 1 W allows the diode to handle higher power levels without overheating.

Nominal Reference Voltage: 330 V

The nominal reference voltage of 330 V provides precise voltage regulation, making it ideal for applications requiring stable voltage outputs.

Technical Specifications

Zener Diodes 3EZ330D5 attributes and parameters. Explore more Zener Diodes devices from Onsemi

Specs

Case Connection:

ISOLATED

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Dynamic Impedance:

2200 ohm

JEDEC-95 Code:

DO-41

JESD-30 Code:

O-PALF-W2

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

LONG FORM

Polarity:

UNIDIRECTIONAL

Maximum Power Dissipation:

1 W

Qualification:

Not Qualified

Nominal Reference Voltage:

330 V

Sub-Category:

Voltage Reference Diodes

Surface Mount:

NO

Technology:

ZENER

Terminal Finish:

Tin (Sn)

Terminal Form:

Terminal Position:

Maximum Voltage Tolerance:

5 %

Working Test Current:

2.3 mA

Trade Compliance

3EZ330D5 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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