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3EZ360D5

Onsemi

3EZ360D5 by Onsemi

The Onsemi 3EZ360D5 Zener Diode has a nominal reference voltage of 360V, max power dissipation of 1W, and max operating temperature of 200 °C. It is used in applications requiring precise voltage regulation such as power supplies and voltage references.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Digiode

USA . 1,908 parts In-Stock

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Vyrian

USA . 1,339 parts In-Stock

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Problanco Electronics

Mexico . 7,456 parts In-Stock

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Kulean Microsystems

USA . 3,906 parts In-Stock

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SupplyDigital Components

Austria . 3,342 parts In-Stock

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Northwest PG Solutions

USA . 2,288 parts In-Stock

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TANS Electronics

Latvia . 1,612 parts In-Stock

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Corphita

USA . 1,596 parts In-Stock

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Native Components

USA . 758 parts In-Stock

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UHIMA Technologies

Türkiye . 341 parts In-Stock

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Corohmni

South Africa . 152 parts In-Stock

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Overview

Experience top-notch quality and performance with the 3EZ360D5 Zener Diode by Onsemi. As a reputable manufacturer in the industry, Onsemi guarantees reliability and precision in every product they produce. The 3EZ360D5 is perfect for a wide range of applications, offering customers unparalleled value and benefits. Trust in this Zener Diode to deliver consistently accurate voltage regulation, ensuring optimal performance in your circuits. Upgrade to the 3EZ360D5 today and experience the difference for yourself!

Feature Benefit Bullets

Config: SINGLE

Single configuration allows for easy installation and straightforward circuit integration.

Working Test Current: 2.1 mA

Low working test current ensures minimal power consumption and efficient operation.

Maximum Voltage Tolerance: 5 %

High voltage tolerance of 5% ensures stable performance even under varying voltage conditions.

Maximum Operating Temperature: 200 °C

High maximum operating temperature of 200 °C allows for use in a wide range of environments.

Maximum Dynamic Impedance: 2700 ohm

Low dynamic impedance of 2700 ohms ensures fast response and accurate voltage regulation.

Terminal Finish: Tin/Lead (Sn/Pb)

Tin/Lead terminal finish provides durability and reliable connection in various applications.

Maximum Power Dissipation: 1 W

High maximum power dissipation of 1 watt allows for handling of high power loads without overheating.

Diode Type: ZENER DIODE

Zener diode type ensures precise voltage regulation and protection in electronic circuits.

Nominal Reference Voltage: 360 V

High nominal reference voltage of 360 volts makes this zener diode suitable for applications requiring high voltage regulation.

Technical Specifications

Zener Diodes 3EZ360D5 attributes and parameters. Explore more Zener Diodes devices from Onsemi

Specs

Config:

SINGLE

Diode Type:

Maximum Dynamic Impedance:

2700 ohm

JESD-609 Code:

e0

No. of Elements:

1

Maximum Operating Temperature:

200 Cel

Maximum Power Dissipation:

1 W

Nominal Reference Voltage:

360 V

Sub-Category:

Voltage Reference Diodes

Surface Mount:

NO

Terminal Finish:

Tin/Lead (Sn/Pb)

Maximum Voltage Tolerance:

5 %

Working Test Current:

2.1 mA

Trade Compliance

3EZ360D5 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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