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3EZ36D5RR2

Onsemi

3EZ36D5RR2 by Onsemi

The Onsemi 3EZ36D5RR2 is a Zener diode with a nominal reference voltage of 36V and max power dissipation of 1W. It operates in temperatures ranging from -65 to 200 °C and has a max voltage tolerance of 5%. This diode is commonly used for voltage regulation in electronic circuits.

Median Price

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Lifecycle Status

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2

In-Stock Inventory

< 1k

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Vyrian

USA . 351 parts In-Stock

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Digiode

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Native Components

USA . 641 parts In-Stock

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Northwest PG Solutions

USA . 1,169 parts In-Stock

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SupplyDigital Components

Austria . 7,714 parts In-Stock

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Problanco Electronics

Mexico . 6,182 parts In-Stock

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Kulean Microsystems

USA . 5,974 parts In-Stock

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TANS Electronics

Latvia . 5,704 parts In-Stock

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Corphita

USA . 1,282 parts In-Stock

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UHIMA Technologies

Türkiye . 410 parts In-Stock

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Corohmni

South Africa . 332 parts In-Stock

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Overview

Enhance your electronic projects with the 3EZ36D5RR2 Zener Diode by Onsemi. Manufactured with top-notch quality and expertise, this diode offers a reliable solution for voltage regulation in a variety of applications. With its superior performance and durability, this diode ensures smooth operation and protection for your circuits. Experience peace of mind knowing that your electronics are in good hands with the 3EZ36D5RR2.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material of the package body provides good insulation and protection for the diode, making it durable and reliable.

Working Test Current: 21 mA

The high working test current of 21 mA allows for stable and consistent performance of the zener diode in various circuits.

Maximum Voltage Tolerance: 5 %

The low maximum voltage tolerance of 5% ensures accurate and precise voltage regulation in electronic circuits.

Maximum Operating Temperature: 200 °C

The high maximum operating temperature of 200 °C allows the zener diode to operate in harsh environmental conditions without overheating.

Maximum Power Dissipation: 1 W

The high maximum power dissipation of 1 watt ensures that the zener diode can handle high power loads without getting damaged.

Nominal Reference Voltage: 36 V

The 36V nominal reference voltage makes this zener diode suitable for applications requiring stable voltage regulation at this specific voltage level.

Technical Specifications

Zener Diodes 3EZ36D5RR2 attributes and parameters. Explore more Zener Diodes devices from Onsemi

Specs

Case Connection:

ISOLATED

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Dynamic Impedance:

22 ohm

JEDEC-95 Code:

DO-41

JESD-30 Code:

O-PALF-W2

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

200 Cel

Minimum Operating Temperature:

-65 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

LONG FORM

Polarity:

UNIDIRECTIONAL

Maximum Power Dissipation:

1 W

Qualification:

Not Qualified

Nominal Reference Voltage:

36 V

Sub-Category:

Voltage Reference Diodes

Surface Mount:

NO

Technology:

ZENER

Terminal Finish:

TIN LEAD

Terminal Form:

Terminal Position:

Maximum Voltage Tolerance:

5 %

Working Test Current:

21 mA

Trade Compliance

3EZ36D5RR2 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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