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3EZ39D5

Onsemi

3EZ39D5 by Onsemi

The Onsemi 3EZ39D5 is a Zener diode with a nominal reference voltage of 39V and max power dissipation of 1W. It has a working test current of 19mA and max operating temperature of 175 °C. Ideal for applications requiring precise voltage regulation in electronic circuits.

Median Price

$0.105

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Verical

USA . 8,000 parts In-Stock

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$0.105

Distributors (In-Stock)

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Vyrian

USA . 160 parts In-Stock

1+ parts

$0.077

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160

$0.077

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Digiode

USA . 2,323 parts In-Stock

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2,323

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Distributors (Availability)

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Corohmni

South Africa . 260 parts In-Stock

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$0.077

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260

$0.077

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Native Components

USA . 579 parts In-Stock

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$0.687

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579

$0.687

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Northwest PG Solutions

USA . 1,327 parts In-Stock

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$0.755

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Kepictronics

USA . 33,000 parts In-Stock

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33,000

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Kulean Microsystems

USA . 7,682 parts In-Stock

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7,682

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TANS Electronics

Latvia . 5,646 parts In-Stock

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Component Stockers USA

USA . 4,988 parts In-Stock

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SupplyDigital Components

Austria . 2,218 parts In-Stock

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Corphita

USA . 2,051 parts In-Stock

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UHIMA Technologies

Türkiye . 461 parts In-Stock

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461

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Problanco Electronics

Mexico . 272 parts In-Stock

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Overview

Looking for a reliable and high-quality Zener Diode? Look no further than the 3EZ39D5 by Onsemi. With a reputation for excellence, Onsemi offers top-notch products that deliver exceptional performance. Whether you're working on automotive electronics, industrial power supplies, or telecommunications equipment, this Zener Diode is perfect for voltage regulation and protection. Trust Onsemi to provide you with a product that offers value, benefits, and advantages that will exceed your expectations.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection for the zener diode, ensuring long-lasting performance.

Working Test Current: 19 mA

The high working test current of 19 mA allows for reliable operation in various electronic circuits.

Maximum Voltage Tolerance: 5 %

With a maximum voltage tolerance of 5%, this zener diode ensures accurate voltage regulation.

Maximum Operating Temperature: 175 °C

The high maximum operating temperature of 175 °C enables the zener diode to function effectively in a wide range of environments.

Maximum Power Dissipation: 1 W

The maximum power dissipation of 1 W allows the zener diode to handle high-power applications without overheating.

Nominal Reference Voltage: 39 V

With a nominal reference voltage of 39 V, this zener diode is suitable for voltage regulation in various electronic circuits.

Technical Specifications

Zener Diodes 3EZ39D5 attributes and parameters. Explore more Zener Diodes devices from Onsemi

Specs

Case Connection:

ISOLATED

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Dynamic Impedance:

28 ohm

JEDEC-95 Code:

DO-41

JESD-30 Code:

O-PALF-W2

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

175 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

LONG FORM

Peak Reflow Temperature (C):

260

Polarity:

UNIDIRECTIONAL

Maximum Power Dissipation:

1 W

Qualification:

Not Qualified

Nominal Reference Voltage:

39 V

Sub-Category:

Voltage Reference Diodes

Surface Mount:

NO

Technology:

ZENER

Terminal Finish:

TIN

Terminal Form:

Terminal Position:

Maximum Voltage Tolerance:

5 %

Working Test Current:

19 mA

Trade Compliance

3EZ39D5 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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