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3EZ36D5RLG

Onsemi

3EZ36D5RLG by Onsemi

The Onsemi 3EZ36D5RLG is a Zener diode with a nominal reference voltage of 36V and max power dissipation of 1W. It operates at temperatures up to 175 °C, with a max voltage tolerance of 5%. Ideal for applications requiring precise voltage regulation in electronic circuits.

Median Price

$0.153

Lifecycle Status

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1k+

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Adafruit Industries

USA . 70 parts In-Stock

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Rochester

USA . 12,000 parts In-Stock

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$0.159

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$0.132

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$0.117

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DigiKey

USA . 12,000 parts In-Stock

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Verical

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Digiode

USA . 679 parts In-Stock

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Vyrian

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DigiKey Marketplace

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Corphita

USA . 2,134 parts In-Stock

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Corohmni

South Africa . 133 parts In-Stock

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Advanced Electronics

New Zealand . 70 parts In-Stock

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Native Components

USA . 759 parts In-Stock

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Northwest PG Solutions

USA . 890 parts In-Stock

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Continental Prestige Electronics

USA . 12,000 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

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SupplyDigital Components

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TANS Electronics

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Kulean Microsystems

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UHIMA Technologies

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Problanco Electronics

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Overview

Elevate your electronic projects with the 3EZ36D5RLG Zener Diode from Onsemi, a trusted manufacturer known for delivering top-quality components. Perfect for voltage regulation and protection in a variety of applications, this single-configured diode offers a nominal reference voltage of 36V with a maximum voltage tolerance of 5%. With a maximum power dissipation of 1W and peak reflow temperature of 260 °C, this diode ensures reliable performance even under extreme conditions. Trust Onsemi's expertise and invest in the 3EZ36D5RLG for unmatched value, benefits, and advantages in your next project.

Feature Benefit Bullets

Working Test Current: 21 mA

The higher working test current of 21 mA ensures that the zener diode can handle a higher current flow without breaking down, making it suitable for applications with varying current requirements.

Maximum Voltage Tolerance: 5%

With a low maximum voltage tolerance of 5%, this zener diode provides precise voltage regulation, making it ideal for applications where maintaining a stable voltage is crucial.

Maximum Operating Temperature: 175 °C

The zener diode can operate at high temperatures of up to 175 °C, ensuring reliable performance even in demanding thermal conditions.

Maximum Dynamic Impedance: 22 ohm

The low dynamic impedance of 22 ohms allows for efficient voltage regulation and ensures minimal power loss in the circuit, making this zener diode energy-efficient.

Terminal Finish: TIN

The TIN terminal finish provides good solderability and conductivity, ensuring secure connections and reliable performance in various electronic applications.

Maximum Power Dissipation: 1 W

With a high maximum power dissipation of 1 W, this zener diode can handle higher power levels without overheating, making it suitable for applications with high power requirements.

Peak Reflow Temperature °C: 260

The zener diode can withstand peak reflow temperatures of up to 260 °C, ensuring robust performance during soldering processes without compromising its functionality.

Nominal Reference Voltage: 36 V

The nominal reference voltage of 36 V provides precise voltage regulation, making this zener diode suitable for applications requiring stable voltage levels within this range.

Technical Specifications

Zener Diodes 3EZ36D5RLG attributes and parameters. Explore more Zener Diodes devices from Onsemi

Specs

Config:

SINGLE

Diode Type:

Maximum Dynamic Impedance:

22 ohm

JESD-609 Code:

e3

No. of Elements:

1

Maximum Operating Temperature:

175 Cel

Peak Reflow Temperature (C):

260

Maximum Power Dissipation:

1 W

Nominal Reference Voltage:

36 V

Sub-Category:

Voltage Reference Diodes

Surface Mount:

NO

Terminal Finish:

TIN

Maximum Voltage Tolerance:

5 %

Working Test Current:

21 mA

Trade Compliance

3EZ36D5RLG Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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