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3EZ36D5RR1

Onsemi

3EZ36D5RR1 by Onsemi

The Onsemi 3EZ36D5RR1 is a Zener diode with a nominal reference voltage of 36V and max power dissipation of 1W. It operates in temperatures ranging from -65 to 200 °C, making it suitable for various applications requiring precise voltage regulation. With a max dynamic impedance of 22 ohm, this diode ensures stable performance in electronic circuits.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Vyrian

USA . 966 parts In-Stock

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Digiode

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Native Components

USA . 822 parts In-Stock

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$6.969

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SupplyDigital Components

Austria . 6,331 parts In-Stock

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Kulean Microsystems

USA . 2,094 parts In-Stock

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Northwest PG Solutions

USA . 1,886 parts In-Stock

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TANS Electronics

Latvia . 1,846 parts In-Stock

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Corphita

USA . 1,458 parts In-Stock

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Problanco Electronics

Mexico . 1,037 parts In-Stock

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UHIMA Technologies

Türkiye . 909 parts In-Stock

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Corohmni

South Africa . 469 parts In-Stock

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Overview

Unlock the power of precision with the 3EZ36D5RR1 Zener Diode by Onsemi. Crafted with quality materials and expert engineering, this single-configured diode offers unmatched reliability and performance in a variety of applications. From power supplies to voltage regulation, this zener diode ensures stable operation and protection for your circuits. Trust Onsemi to deliver value and excellence with every component, providing you with the advantage you need to succeed in your projects. Choose the 3EZ36D5RR1 for superior quality and peace of mind.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/Epoxy material provides good protection and durability for the diode, ensuring a longer lifespan.

Working Test Current: 21 mA

With a high working test current, this Zener diode can handle a good amount of current flow without being damaged.

Maximum Voltage Tolerance: 5 %

A low maximum voltage tolerance ensures that the diode can maintain a stable voltage output within a small range of variation.

Maximum Operating Temperature: 200 °C

With a high maximum operating temperature, this Zener diode can handle heat well and continue to function reliably in demanding environments.

Maximum Power Dissipation: 1 W

The high maximum power dissipation rating indicates that this Zener diode can handle power surges and fluctuations without getting damaged.

Nominal Reference Voltage: 36 V

The 36V nominal reference voltage makes this Zener diode suitable for applications requiring a stable voltage reference at this specific value.

Technical Specifications

Zener Diodes 3EZ36D5RR1 attributes and parameters. Explore more Zener Diodes devices from Onsemi

Specs

Case Connection:

ISOLATED

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Dynamic Impedance:

22 ohm

JEDEC-95 Code:

DO-41

JESD-30 Code:

O-PALF-W2

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

200 Cel

Minimum Operating Temperature:

-65 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

LONG FORM

Polarity:

UNIDIRECTIONAL

Maximum Power Dissipation:

1 W

Qualification:

Not Qualified

Nominal Reference Voltage:

36 V

Sub-Category:

Voltage Reference Diodes

Surface Mount:

NO

Technology:

ZENER

Terminal Finish:

TIN LEAD

Terminal Form:

Terminal Position:

Maximum Voltage Tolerance:

5 %

Working Test Current:

21 mA

Trade Compliance

3EZ36D5RR1 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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