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SZ1SMB5914BT3G-VF01

Onsemi

SZ1SMB5914BT3G-VF01 by Onsemi

SZ1SMB5914BT3G-VF01 by Onsemi is a Zener diode with a working test current of 104.2 mA and max reverse current of 75 uA. It is commonly used in applications requiring voltage regulation and protection against voltage spikes.

Median Price

$0.099

Lifecycle Status

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Adafruit Industries

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Semicontronic

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Corphita

USA . 1,625 parts In-Stock

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Advanced Electronics

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Corohmni

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Overview

Looking for a reliable and high-quality Zener diode? Look no further than the SZ1SMB5914BT3G-VF01 by Onsemi. With its single configuration and small outline package style, this diode is perfect for a wide range of applications. Whether you're looking to regulate voltage, protect circuits, or ensure stability, this diode has got you covered. Plus, with its maximum operating temperature of 150 °C, it can handle even the toughest conditions. Trust Onsemi, a reputable manufacturer, to deliver top-notch performance and durability. Don't settle for anything less when it comes to your electronic needs. Get the SZ1SMB5914BT3G-VF01 today and experience the value, benefits, and advantages it brings to your projects.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides excellent protection and durability, making the Zener diode suitable for various applications.

Config: SINGLE

The single configuration simplifies circuit design, offering convenience and ease of use.

Working Test Current: 104.2 mA

With a high working test current, this Zener diode can efficiently regulate voltage in demanding situations.

Surface Mount: YES

The surface mount feature allows for easy installation and integration onto circuit boards, optimizing space utilization.

Maximum Reverse Current: 75 uA

The low maximum reverse current ensures efficient and reliable reverse voltage regulation, enhancing circuit performance.

Package Shape: RECTANGULAR

The rectangular shape enables neat and organized arrangement within circuit designs.

Reverse Test Voltage: 1 V

This Zener diode can withstand up to 1V reverse voltage, providing reliable protection against reverse voltage spikes.

No. of Terminals: 2

The diode's two terminals simplify connectivity and contribute to a streamlined circuit layout.

Package Style (Meter): SMALL OUTLINE

The small outline package style facilitates compact circuit designs, especially in space-constrained applications.

Maximum Voltage Tolerance: 5%

With a high voltage tolerance, this Zener diode ensures stable voltage regulation within a 5% range, increasing circuit reliability.

Maximum Knee Impedance: 500 ohm

The low knee impedance enhances the diode's ability to maintain accurate voltage regulation and provide smooth current flow.

Maximum Operating Temperature: 150 °C

With a high maximum operating temperature, this Zener diode can reliably function in harsh environments.

Maximum Dynamic Impedance: 9 ohm

The low maximum dynamic impedance allows for efficient voltage regulation and optimal circuit performance.

Minimum Operating Temperature: -65 °C

The diode's ability to operate at low temperatures makes it suitable for various temperature-sensitive applications.

Terminal Finish: MATTE TIN

The matte tin terminal finish ensures excellent solderability and long-term contact reliability.

Terminal Position: DUAL

The dual terminal position facilitates easy installation and reduces circuit complexity.

Maximum Power Dissipation: 0.55 W

This Zener diode can handle a maximum power dissipation of 0.55W, making it suitable for high-power applications.

Maximum Time At Peak Reflow Temperature (s): 30

The diode's ability to withstand peak reflow temperature for 30 seconds ensures reliable soldering during manufacturing.

Peak Reflow Temperature °C: 260

With a peak reflow temperature of 260°C, this diode can withstand high-temperature soldering processes.

Reference Standard: AEC-Q101

Complying with the AEC-Q101 reference standard ensures the diode's reliability and performance in automotive applications.

Diode Type: ZENER DIODE

The Zener diode type indicates its specific functionality in voltage regulation and protection applications.

Maximum Forward Voltage (VF): 1.5 V

The diode's low maximum forward voltage ensures minimal voltage drop and efficient energy transfer.

Nominal Reference Voltage: 3.6 V

With a nominal reference voltage of 3.6V, this diode provides precise voltage regulation and stability.

Technology: ZENER

The Zener technology allows this diode to provide precise voltage regulation and protection against voltage spikes.

Terminal Form: C BEND

The C bend terminal form simplifies the diode's installation process and contributes to a secure connection.

No. of Elements: 1

This diode consists of a single element, making it a simple and cost-effective choice for voltage regulation.

Moisture Sensitivity Level (MSL): 1

With an MSL of 1, this diode exhibits excellent moisture resistance, ensuring long-term reliability.

Polarity: UNIDIRECTIONAL

The unidirectional polarity ensures that this diode only allows current flow in one direction, providing effective voltage regulation and protection.

Diode Element Material: SILICON

The silicon diode element material offers high conductivity and reliable performance in various temperature and voltage conditions.

Technical Specifications

Zener Diodes SZ1SMB5914BT3G-VF01 attributes and parameters. Explore more Zener Diodes devices from Onsemi

Specs

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Dynamic Impedance:

9 ohm

Maximum Forward Voltage (VF):

1.5 V

JESD-30 Code:

R-PDSO-C2

JESD-609 Code:

e3

Maximum Knee Impedance:

500 ohm

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-65 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity:

UNIDIRECTIONAL

Maximum Power Dissipation:

.55 W

Reference Standard:

AEC-Q101

Nominal Reference Voltage:

3.6 V

Maximum Reverse Current:

75 uA

Reverse Test Voltage:

1 V

Surface Mount:

YES

Technology:

ZENER

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Maximum Voltage Tolerance:

5 %

Working Test Current:

104.2 mA

Trade Compliance

SZ1SMB5914BT3G-VF01 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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