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SZ1SMB5920BT3G-VF01

Onsemi

SZ1SMB5920BT3G-VF01 by Onsemi

SZ1SMB5920BT3G-VF01 by Onsemi is a Zener diode with 4V reverse test voltage, 60.5mA working test current, and 6.2V nominal reference voltage. It is ideal for applications requiring precise voltage regulation in automotive electronics, telecommunications, and power supplies due to its AEC-Q101 reference standard compliance.

Median Price

$0.040

Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

Distributors (Authorized)

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Adafruit Industries

USA . 40 parts In-Stock

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$0.040

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$0.038

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40

$0.040

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Digiode

USA . 2,019 parts In-Stock

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Flip Electronics

USA . 22,500 parts In-Stock

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Chip Stock

USA . 15,000 parts In-Stock

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Vyrian

USA . 13,060 parts In-Stock

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Nova Conductors

Japan . 10 parts In-Stock

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Ampacity Inc.

Singapore . 40 parts In-Stock

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$0.034

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40

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Semicontronic

India . 40 parts In-Stock

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$0.034

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$0.033

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$0.033

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40

$0.034

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Corphita

USA . 2,491 parts In-Stock

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$0.036

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Corohmni

South Africa . 167 parts In-Stock

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Advanced Electronics

New Zealand . 40 parts In-Stock

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$0.038

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Aztec Data Supply Inc.

USA . 4,168 parts In-Stock

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$0.119

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AZTECH Wire

Italy . 226 parts In-Stock

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Component Stockers USA

USA . 366 parts In-Stock

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$99.990

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Kulean Microsystems

USA . 7,411 parts In-Stock

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SupplyDigital Components

Austria . 5,872 parts In-Stock

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Continental Prestige Electronics

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Problanco Electronics

Mexico . 3,616 parts In-Stock

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Argo Parts USA

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TANS Electronics

Latvia . 624 parts In-Stock

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UHIMA Technologies

Türkiye . 277 parts In-Stock

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Robosynatics

Brazil . 200 parts In-Stock

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$7.103

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$7.103

Lucentia Tech

USA . 200 parts In-Stock

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$7.103

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$7.103

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$7.103

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Bastille Electronics

Australia . 100 parts In-Stock

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Modulus Dynamics

Lithuania . 15 parts In-Stock

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Overview

Unlock the power of precision with the SZ1SMB5920BT3G-VF01 Zener Diode by Onsemi. Manufactured with top-notch quality and cutting-edge technology, this diode is designed for a wide range of applications. From voltage regulation to surge protection, this product offers unmatched performance and reliability. Experience peace of mind knowing that your circuits are safe and secure with the SZ1SMB5920BT3G-VF01, providing value and benefits that exceed expectations. Trust Onsemi to deliver quality products that meet your needs effortlessly.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection for the diode, making it a reliable choice for various applications.

Config: SINGLE

The single configuration simplifies installation and reduces the chances of errors, making it user-friendly.

Working Test Current: 60.5 mA

With a high working test current, this diode can handle heavy loads without the risk of failure.

Surface Mount: YES

The surface-mount feature allows for easy integration into compact circuit designs, saving space and enhancing efficiency.

Maximum Reverse Current: 5 uA

The low maximum reverse current ensures minimal power loss and efficient performance of the diode.

Package Shape: RECTANGULAR

The rectangular shape of the package makes it easy to handle and install, enhancing convenience for users.

Reverse Test Voltage: 4 V

The high reverse test voltage capability adds to the robustness of the diode, making it suitable for demanding applications.

No. of Terminals: 2

With two terminals, this diode is easy to connect and offers a simple solution for circuit connections.

Package Style (Meter): SMALL OUTLINE

The small outline package style saves space and allows for denser circuit layouts, making it ideal for compact designs.

Maximum Voltage Tolerance: 5 %

The tight voltage tolerance ensures accurate performance and consistent results in various operating conditions.

Maximum Knee Impedance: 200 ohm

The low knee impedance enables efficient current regulation and stable operation of the diode.

Maximum Operating Temperature: 150 °C

The high maximum operating temperature range ensures the diode can withstand harsh environmental conditions, expanding its range of applications.

Maximum Dynamic Impedance: 2 ohm

The low dynamic impedance enhances the diode's response time and efficiency in regulating current flow.

Minimum Operating Temperature: -65 °C

With a low minimum operating temperature, this diode is suitable for use in extreme cold environments without compromising performance.

Terminal Finish: Matte Tin (Sn) - annealed

The matte tin finish provides corrosion resistance and facilitates soldering, ensuring reliable electrical connections.

Terminal Position: DUAL

The dual terminal position enables flexible installation and connectivity options, adding versatility to the diode.

Maximum Power Dissipation: 0.55 W

The high maximum power dissipation rating allows the diode to handle high power loads without overheating or failure.

Maximum Time At Peak Reflow Temperature (s): 30

The extended time at peak reflow temperature ensures a secure bond during the soldering process, enhancing reliability.

Peak Reflow Temperature °C: 260

The high peak reflow temperature capability ensures the diode can withstand the soldering process without damage, ensuring a robust assembly.

Reference Standard: AEC-Q101

Compliant with the AEC-Q101 standard, this diode meets strict automotive industry requirements for quality and reliability.

Diode Type: ZENER DIODE

The Zener diode type allows for precise voltage regulation, making it ideal for applications requiring stable voltage levels.

Maximum Forward Voltage (VF): 1.5 V

With a low forward voltage drop, this diode minimizes power loss and maximizes efficiency in voltage regulation.

Nominal Reference Voltage: 6.2 V

The nominal reference voltage provides a stable voltage level for precise regulation and control in various circuit applications.

Technology: ZENER

Utilizing Zener technology, this diode offers excellent voltage regulation and reliability for consistent performance.

Terminal Form: C BEND

The C bend terminal form facilitates secure connections and minimizes the risk of disconnection, ensuring reliable operation.

Polarity: UNIDIRECTIONAL

With unidirectional polarity, this diode ensures consistent current flow in one direction, preventing reverse current damage.

Diode Element Material: SILICON

The silicon diode element material provides high efficiency and reliability in current regulation, making it a durable choice for long-term use.

Technical Specifications

Zener Diodes SZ1SMB5920BT3G-VF01 attributes and parameters. Explore more Zener Diodes devices from Onsemi

Specs

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Dynamic Impedance:

2 ohm

Maximum Forward Voltage (VF):

1.5 V

JESD-30 Code:

R-PDSO-C2

JESD-609 Code:

e3

Maximum Knee Impedance:

200 ohm

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-65 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity:

UNIDIRECTIONAL

Maximum Power Dissipation:

.55 W

Reference Standard:

AEC-Q101

Nominal Reference Voltage:

6.2 V

Maximum Reverse Current:

5 uA

Reverse Test Voltage:

4 V

Surface Mount:

YES

Technology:

ZENER

Terminal Finish:

Matte Tin (Sn) - annealed

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Maximum Voltage Tolerance:

5 %

Working Test Current:

60.5 mA

Trade Compliance

SZ1SMB5920BT3G-VF01 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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