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SZ1SMB5913BT3G

Onsemi

SZ1SMB5913BT3G by Onsemi

SZ1SMB5913BT3G by Onsemi is a Zener diode with a 3.3V nominal reference voltage, suitable for automotive applications due to AEC-Q101 standard compliance. It has a max power dissipation of 0.55W, operating temperature range from -65°C to 150°C, and a working test current of 113.6mA.

Median Price

$0.247

Lifecycle Status

Suppliers In-Stock

10

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Adafruit Industries

USA . 350 parts In-Stock

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$0.100

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$0.095

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$0.095

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350

$0.100

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$0.095

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Mouser Electronics

USA . 4,730 parts In-Stock

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$1.140

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$0.467

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$1.140

$0.467

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DigiKey

USA . 2,500 parts In-Stock

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$0.247

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Digiode

USA . 1,405 parts In-Stock

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Nova Conductors

Japan . 69 parts In-Stock

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$0.368

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Chip Stock

USA . 32,500 parts In-Stock

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Flip Electronics

USA . 23,333 parts In-Stock

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IBS Electronics

USA . 7,500 parts In-Stock

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$0.323

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Vyrian

USA . 952 parts In-Stock

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Prism Electronics

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Distributors (Availability)

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Semicontronic

India . 3,198 parts In-Stock

1+ parts

$0.085

100+ parts

$0.083

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$0.082

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3,198

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$0.083

$0.082

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Ampacity Inc.

Singapore . 1,245 parts In-Stock

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$0.085

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Corphita

USA . 427 parts In-Stock

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$0.090

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Aztec Data Supply Inc.

USA . 4,317 parts In-Stock

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$0.092

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Advanced Electronics

New Zealand . 350 parts In-Stock

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$0.100

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$0.095

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350

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Corohmni

South Africa . 494 parts In-Stock

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Argo Parts USA

USA . 24 parts In-Stock

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$0.357

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$0.346

24

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Netroflash

USA . 1,000 parts In-Stock

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$0.368

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Modulus Dynamics

Lithuania . 15 parts In-Stock

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$0.409

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$0.405

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$0.393

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15

$0.409

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$0.393

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Continental Prestige Electronics

USA . 740 parts In-Stock

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$0.475

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$0.257

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$0.206

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740

$0.475

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Infinite Electronics LLP (Excess)

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RC Electronics

USA . 60,447 parts In-Stock

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iodParts Technologies Inc.

India . 17,500 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

USA . 16,617 parts In-Stock

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TANS Electronics

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Problanco Electronics

Mexico . 4,444 parts In-Stock

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SupplyDigital Components

Austria . 4,360 parts In-Stock

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Lixinc

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Perfect Parts

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Authorized Procurement Solutions

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Kulean Microsystems

USA . 519 parts In-Stock

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UHIMA Technologies

Türkiye . 509 parts In-Stock

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Robosynatics

Brazil . 350 parts In-Stock

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$7.762

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$7.762

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$7.762

350

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$7.762

$7.762

Lucentia Tech

USA . 350 parts In-Stock

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$7.762

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$7.762

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$7.762

350

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$7.762

$7.762

$7.762

Formix International (Excess)

India . 289 parts In-Stock

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Overview

Discover the Onsemi SZ1SMB5913BT3G Zener Diode, a high-quality product manufactured by Onsemi known for its superior performance and reliability. Ideal for a variety of applications, this Zener diode offers customers exceptional value with its precise voltage regulation and protection capabilities. Whether you're in need of voltage stabilization or surge protection, this product delivers top-notch results with its small outline package style and dual terminal position. Trust Onsemi for all your Zener diode needs and experience the advantages firsthand.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy body material ensures durability and protection for the zener diode, making it suitable for various environments.

Working Test Current: 113.6 mA

The high working test current of 113.6 mA allows for reliable and efficient performance of the zener diode in different applications.

Surface Mount: YES

Being surface mountable enables easy and convenient installation of the zener diode on circuit boards, saving space and simplifying assembly.

Maximum Operating Temperature: 150 °C

With a maximum operating temperature of 150°C, this zener diode can withstand high temperatures without compromising its functionality.

Nominal Reference Voltage: 3.3 V

The 3.3V nominal reference voltage makes this zener diode ideal for voltage regulation and stabilization within electronic circuits.

Diode Element Material: SILICON

Silicon diode element material ensures high performance, reliability, and efficiency of the zener diode in various applications.

Technical Specifications

Zener Diodes SZ1SMB5913BT3G attributes and parameters. Explore more Zener Diodes devices from Onsemi

Specs

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Dynamic Impedance:

10 ohm

JESD-30 Code:

R-PDSO-L2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-65 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity:

UNIDIRECTIONAL

Maximum Power Dissipation:

.55 W

Reference Standard:

AEC-Q101

Nominal Reference Voltage:

3.3 V

Sub-Category:

Voltage Reference Diodes

Surface Mount:

YES

Technology:

ZENER

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Maximum Voltage Tolerance:

5 %

Working Test Current:

113.6 mA

Trade Compliance

SZ1SMB5913BT3G Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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