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1SMB5913BT3G

Onsemi

1SMB5913BT3G by Onsemi

1SMB5913BT3G by Onsemi is a Zener diode with a nominal reference voltage of 3.3V and max power dissipation of 0.55W. It operates in temperatures ranging from -65 to 150°C, making it suitable for applications requiring precise voltage regulation in various electronic circuits. With its small outline package style and surface mount capability, this diode is ideal for compact designs where space is limited.

Median Price

$0.143

Lifecycle Status

Suppliers In-Stock

31

In-Stock Inventory

1k+

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Adafruit Industries

USA . 83 parts In-Stock

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Distrelec

Netherlands . 2,390 parts In-Stock

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DigiKey

USA . 55,912 parts In-Stock

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Mouser Electronics

USA . 42,273 parts In-Stock

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Newark

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Verical

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Master Electronics

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Arrow

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Future Electronics

Canada . 15,000 parts In-Stock

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Farnell

UK . 8,579 parts In-Stock

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Chip1Stop

Japan . 2,500 parts In-Stock

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Nova Conductors

Japan . 50 parts In-Stock

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Digiode

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Mobius Materials

USA . 2,884 parts In-Stock

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TME

Poland . 1,755 parts In-Stock

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Maritex

Poland . 1,254 parts In-Stock

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Component Electronics Inc.

Canada . 11 parts In-Stock

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IBS Electronics

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NAC Semi

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Chip Stock

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ComSIT Distribution GmbH

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North Shore Components

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Tectiva GmbH

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Bristol Electronics

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Modulus Dynamics

Lithuania . 10,788 parts In-Stock

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Ampacity Inc.

Singapore . 7,394 parts In-Stock

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Semicontronic

India . 8,092 parts In-Stock

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Corohmni

South Africa . 413 parts In-Stock

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Argo Parts USA

USA . 4,368 parts In-Stock

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Corphita

USA . 885 parts In-Stock

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Advanced Electronics

New Zealand . 83 parts In-Stock

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Aztec Data Supply Inc.

USA . 294 parts In-Stock

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Continental Prestige Electronics

USA . 52,322 parts In-Stock

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Perfect Parts

USA . 762,620 parts In-Stock

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RC Electronics

USA . 98,401 parts In-Stock

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Robosynatics

Brazil . 31,884 parts In-Stock

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Lucentia Tech

USA . 31,884 parts In-Stock

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GreenTree Electronics

Israel . 10,000 parts In-Stock

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Lixinc

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Problanco Electronics

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iodParts Technologies Inc.

India . 7,162 parts In-Stock

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Authorized Procurement Solutions

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Metaverse IC Inc.

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SupplyDigital Components

Austria . 4,325 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

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Kulean Microsystems

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TANS Electronics

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S.R.D Solutions

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Kepictronics

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Futuretech Components

Singapore . 2,430 parts In-Stock

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Netroflash

USA . 1,000 parts In-Stock

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UHIMA Technologies

Türkiye . 526 parts In-Stock

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Infinite Electronics LLP (Excess)

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Overview

Unlock the power of precision with the 1SMB5913BT3G Zener Diode by Onsemi. Designed with top-quality materials and advanced technology, this single-config diode offers unparalleled performance and reliability. Ideal for a wide range of applications, this diode provides a nominal reference voltage of 3.3V with a maximum voltage tolerance of 5%. Whether you're in need of voltage regulation or transient protection, this diode is the perfect solution. Trust Onsemi to deliver exceptional quality and value with the 1SMB5913BT3G.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy makes the diode lightweight and durable, ideal for a variety of applications.

Config: SINGLE

The single configuration simplifies the circuit design and installation process, making it easy to use.

Working Test Current: 113.6 mA

With a high working test current, this diode can handle heavy loads without any issues.

Surface Mount: YES

The surface mount feature allows for easy and secure mounting on circuit boards, saving space and making assembly more efficient.

Package Shape: RECTANGULAR

The rectangular shape of the package provides stability and ease of handling during installation.

No. of Terminals: 2

With only 2 terminals, this diode is straightforward to connect and integrate into your circuit.

Package Style (Meter): SMALL OUTLINE

The small outline package style saves space on a circuit board, making it ideal for compact designs.

Maximum Voltage Tolerance: 5%

The 5% maximum voltage tolerance ensures consistent performance and reliability in various operating conditions.

Maximum Operating Temperature: 150 °C

The high maximum operating temperature range allows for use in a wide range of environments and applications.

Maximum Dynamic Impedance: 10 ohm

The low dynamic impedance helps in maintaining a stable voltage output, crucial for sensitive electronic devices.

Minimum Operating Temperature: -65 °C

The low minimum operating temperature ensures that the diode can still function effectively even in extreme cold environments.

Terminal Finish: MATTE TIN

The matte tin finish provides excellent solderability, ensuring a secure and reliable connection in your circuit.

Terminal Position: DUAL

The dual terminal position offers flexibility in mounting and connection options, making it versatile for different setups.

Maximum Power Dissipation: 0.55 W

With a high maximum power dissipation, this diode can handle large amounts of power without overheating.

Maximum Time At Peak Reflow Temperature (s): 30

The diode can withstand the peak reflow temperature for up to 30 seconds, allowing for proper soldering and assembly.

Peak Reflow Temperature °C: 260

The peak reflow temperature of 260°C ensures a strong and durable solder joint during assembly.

Diode Type: ZENER DIODE

Being a Zener diode, this product is specifically designed for voltage regulation and protection in electronic circuits.

Nominal Reference Voltage: 3.3 V

The 3.3V nominal reference voltage provides precise voltage regulation, essential for sensitive components or circuits.

Technology: ZENER

The Zener technology used in this diode ensures accurate and reliable voltage regulation over a wide range of conditions.

Terminal Form: L BEND

The L bend terminal form offers secure mounting and easy soldering, ensuring a stable connection in your circuit.

Polarity: UNIDIRECTIONAL

The unidirectional polarity simplifies circuit design and ensures proper current flow in one direction only.

Diode Element Material: SILICON

The silicon diode element material provides high efficiency and reliability, making it a durable choice for various applications.

Technical Specifications

Zener Diodes 1SMB5913BT3G attributes and parameters. Explore more Zener Diodes devices from Onsemi

Specs

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Dynamic Impedance:

10 ohm

JEDEC-95 Code:

DO-214AA

JESD-30 Code:

R-PDSO-L2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-65 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity:

UNIDIRECTIONAL

Maximum Power Dissipation:

.55 W

Qualification:

Not Qualified

Nominal Reference Voltage:

3.3 V

Sub-Category:

Voltage Reference Diodes

Surface Mount:

YES

Technology:

ZENER

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Maximum Voltage Tolerance:

5 %

Working Test Current:

113.6 mA

Trade Compliance

1SMB5913BT3G Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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