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1SMB5914BT3G

Onsemi

1SMB5914BT3G by Onsemi

1SMB5914BT3G by Onsemi is a Zener diode with a nominal reference voltage of 3.6V, max power dissipation of 0.55W, and working test current of 104.2mA. It is used in applications requiring precise voltage regulation such as power supplies and voltage references due to its unidirectional polarity and small outline package style.

Median Price

$0.144

Lifecycle Status

Suppliers In-Stock

31

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1k+

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Adafruit Industries

USA . 450 parts In-Stock

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Newark

USA . 161 parts In-Stock

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DigiKey

USA . 8,378 parts In-Stock

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Mouser Electronics

USA . 4,937 parts In-Stock

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Chip1Stop

Japan . 17,500 parts In-Stock

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Verical

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Farnell

UK . 8,906 parts In-Stock

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Arrow

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RS (Exports)

UK . 4,980 parts In-Stock

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Element14

Singapore . 3,490 parts In-Stock

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Digiode

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TME

Poland . 485 parts In-Stock

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Maritex

Poland . 6,749 parts In-Stock

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Nova Conductors

Japan . 150 parts In-Stock

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Ozdisan Elektronik

Türkiye . 2,354 parts In-Stock

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Chip Stock

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IBS Electronics

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Cyclops Electronics Ltd

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Vyrian

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NAC Semi

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Bristol Electronics

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Atlantic Semiconductor

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Florida Circuit

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ComSIT Distribution GmbH

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Prism Electronics

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Semicontronic

India . 8,481 parts In-Stock

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Ampacity Inc.

Singapore . 8,593 parts In-Stock

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Corphita

USA . 1,488 parts In-Stock

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Corohmni

South Africa . 383 parts In-Stock

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Advanced Electronics

New Zealand . 450 parts In-Stock

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Aztec Data Supply Inc.

USA . 2,286 parts In-Stock

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Argo Parts USA

USA . 2,730 parts In-Stock

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Continental Prestige Electronics

USA . 2,577 parts In-Stock

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Modulus Dynamics

Lithuania . 18,833 parts In-Stock

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Component Stockers USA

USA . 1 parts In-Stock

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Netroflash

USA . 50 parts In-Stock

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Perfect Parts

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RC Electronics

USA . 87,124 parts In-Stock

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Lixinc

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Robosynatics

Brazil . 10,465 parts In-Stock

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Lucentia Tech

USA . 10,465 parts In-Stock

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iodParts Technologies Inc.

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Problanco Electronics

Mexico . 7,250 parts In-Stock

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SupplyDigital Components

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Eastek

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Kulean Microsystems

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Authorized Procurement Solutions

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TANS Electronics

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UHIMA Technologies

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Futuretech Components

Singapore . 595 parts In-Stock

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Kepictronics

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Overview

Unlock the power of precision and reliability with the 1SMB5914BT3G Zener Diode by Onsemi. Crafted with top-notch quality materials, this diode offers unparalleled performance in a wide range of applications. From voltage regulation to surge protection, this single-configured diode provides peace of mind with its high voltage tolerance and low dynamic impedance. Trust Onsemi's expertise in semiconductor manufacturing and elevate your projects with the value and benefits that the 1SMB5914BT3G brings to the table.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection for the diode, ensuring a longer lifespan.

Working Test Current: 104.2 mA

The high working test current allows for reliable performance in various circuit applications.

Surface Mount: YES

The surface mount capability makes installation easier and saves space on the circuit board.

Maximum Voltage Tolerance: 5 %

The tight voltage tolerance ensures consistent performance and reliability in voltage regulation.

Maximum Operating Temperature: 150 °C

With a high operating temperature range, this diode can withstand harsh environmental conditions.

Maximum Power Dissipation: 0.55 W

The high power dissipation capability allows the diode to handle higher loads without overheating.

Nominal Reference Voltage: 3.6 V

The specific reference voltage makes this diode ideal for applications requiring a stable voltage output.

Technical Specifications

Zener Diodes 1SMB5914BT3G attributes and parameters. Explore more Zener Diodes devices from Onsemi

Specs

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Dynamic Impedance:

9 ohm

JESD-30 Code:

R-PDSO-L2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-65 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity:

UNIDIRECTIONAL

Maximum Power Dissipation:

.55 W

Qualification:

Not Qualified

Nominal Reference Voltage:

3.6 V

Sub-Category:

Voltage Reference Diodes

Surface Mount:

YES

Technology:

ZENER

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Maximum Voltage Tolerance:

5 %

Working Test Current:

104.2 mA

Trade Compliance

1SMB5914BT3G Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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