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1SMB5919BT3G

Onsemi

1SMB5919BT3G by Onsemi

1SMB5919BT3G by Onsemi is a Zener diode with 5.6V nominal voltage, 66.9mA test current, and 2 ohm dynamic impedance. Ideal for applications requiring precise voltage regulation in small outline packages at temperatures ranging from -65 to 150°C.

Median Price

$0.164

Lifecycle Status

Suppliers In-Stock

42

In-Stock Inventory

1k+

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Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Newark

USA . 16,216 parts In-Stock

1+ parts

$0.371

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Distrelec

Netherlands . 1,056 parts In-Stock

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$0.375

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$0.221

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DigiKey

USA . 1,445 parts In-Stock

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$0.530

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$0.206

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$0.138

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Mouser Electronics

USA . 89,078 parts In-Stock

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$0.640

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Future Electronics

Canada . 737,500 parts In-Stock

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Farnell

UK . 66,553 parts In-Stock

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Element14

Singapore . 33,182 parts In-Stock

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EBV Elektronik

Germany . 27,500 parts In-Stock

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Verical

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Master Electronics

USA . 25,000 parts In-Stock

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Arrow

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Avnet

USA . 7,500 parts In-Stock

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Chip1Stop

Japan . 5,417 parts In-Stock

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Distributors (In-Stock)

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Digiode

USA . 2,091 parts In-Stock

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TME

Poland . 11,254 parts In-Stock

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$0.166

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$0.103

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11,254

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$0.096

Maritex

Poland . 5 parts In-Stock

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$0.402

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$0.353

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5

$0.472

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$0.307

Component Electronics Inc.

Canada . 95 parts In-Stock

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Nova Conductors

Japan . 81 parts In-Stock

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Türkiye . 29,438 parts In-Stock

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NAC Semi

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Chip Stock

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Electro Sonic

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Semtec, LLC

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Mil-Aero Solutions, Inc.

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Speed Components Ltd

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Prism Electronics

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Ampacity Inc.

Singapore . 63,956 parts In-Stock

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Semicontronic

India . 62,264 parts In-Stock

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Aztec Data Supply Inc.

USA . 1,406 parts In-Stock

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Corohmni

South Africa . 203 parts In-Stock

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Continental Prestige Electronics

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Argo Parts USA

USA . 2,267 parts In-Stock

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Modulus Dynamics

Lithuania . 18,601 parts In-Stock

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Advanced Electronics

New Zealand . 50 parts In-Stock

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Corphita

USA . 130 parts In-Stock

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Perfect Parts

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RC Electronics

USA . 80,050 parts In-Stock

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Infinite Electronics LLP (Excess)

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ChipstoGo Electronic ltd

UK . 27,500 parts In-Stock

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GreenTree Electronics

Israel . 25,000 parts In-Stock

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Glotronic Ltd.

UK . 8,000 parts In-Stock

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Latvia . 5,923 parts In-Stock

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SupplyDigital Components

Austria . 3,614 parts In-Stock

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Singapore . 2,500 parts In-Stock

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USA . 2,400 parts In-Stock

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Israel . 2,216 parts In-Stock

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Problanco Electronics

Mexico . 1,893 parts In-Stock

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Robosynatics

Brazil . 1,452 parts In-Stock

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Lucentia Tech

USA . 1,452 parts In-Stock

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Spain . 1,011 parts In-Stock

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UHIMA Technologies

Türkiye . 755 parts In-Stock

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Overview

Discover the power of the 1SMB5919BT3G by Onsemi, a top-quality Zener diode that delivers reliable performance and precise voltage regulation. Manufactured by Onsemi, a trusted name in semiconductor technology, this diode is ideal for a wide range of applications. From power supplies to automotive electronics, this diode offers unparalleled value, benefits, and advantages to customers. Experience the difference with the 1SMB5919BT3G and unlock new possibilities for your projects.

Feature Benefit Bullets

Package Body Material:

PLASTIC/EPOXY - This material provides durability and protection for the diode, making it a reliable choice for various applications.

Config:

SINGLE - The single configuration simplifies installation and makes the diode easier to work with.

Working Test Current:

66.9 mA - With a high working test current, this diode can handle heavier loads and offer reliable performance.

Surface Mount:

YES - The surface mount capability allows for easy installation on circuit boards, saving time and effort.

Package Shape:

RECTANGULAR - The rectangular shape of the package makes it easy to integrate into compact designs.

No. of Terminals:

2 - With two terminals, this diode is simple to connect and use in circuits.

Package Style (Meter):

SMALL OUTLINE - The small outline package style saves space and is ideal for applications with limited room.

Maximum Voltage Tolerance:

5% - The tight voltage tolerance ensures accuracy and consistency in performance.

Maximum Operating Temperature:

150 °C - With a high operating temperature, this diode can function reliably in various environments.

Maximum Dynamic Impedance:

2 ohm - The low dynamic impedance helps reduce power losses and improve efficiency.

Minimum Operating Temperature:

65 °C - The low minimum operating temperature range allows for use in extreme cold conditions.

Terminal Finish:

MATTE TIN - The matte tin finish provides good conductivity and corrosion resistance for long-lasting performance.

Terminal Position:

DUAL - The dual terminal position offers flexibility in installation and connection options.

Maximum Power Dissipation:

0.55 W - This diode can handle high power dissipation, making it suitable for demanding applications.

Maximum Time At Peak Reflow Temperature (s):

30 - The short time at peak reflow temperature reduces the risk of thermal damage during soldering.

Peak Reflow Temperature °C:

260 - With a high peak reflow temperature, this diode can withstand the soldering process without damage.

Diode Type:

ZENER DIODE - As a Zener diode, this product provides precise voltage regulation and protection in electrical circuits.

Nominal Reference Voltage:

5.6 V - The nominal reference voltage of 5.6V offers stable voltage regulation for various applications.

Technology:

ZENER - The Zener technology ensures accurate voltage regulation and protection in electrical circuits.

Terminal Form:

L BEND - The L bend terminal form makes installation and connection easy and secure.

Polarity:

UNIDIRECTIONAL - The unidirectional polarity ensures the diode can only conduct in one direction, providing reliable circuit protection.

Diode Element Material:

SILICON - The silicon diode element material offers high performance, reliability, and efficiency in regulating voltage.

Technical Specifications

Zener Diodes 1SMB5919BT3G attributes and parameters. Explore more Zener Diodes devices from Onsemi

Specs

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Dynamic Impedance:

2 ohm

JEDEC-95 Code:

DO-214AA

JESD-30 Code:

R-PDSO-L2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-65 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity:

UNIDIRECTIONAL

Maximum Power Dissipation:

.55 W

Qualification:

Not Qualified

Nominal Reference Voltage:

5.6 V

Sub-Category:

Voltage Reference Diodes

Surface Mount:

YES

Technology:

ZENER

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Maximum Voltage Tolerance:

5 %

Working Test Current:

66.9 mA

Trade Compliance

1SMB5919BT3G Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

NSN

5961-01-589-7527, 5961015897527

NIIN

015897527

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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