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3EZ330D5RR2

Onsemi

3EZ330D5RR2 by Onsemi

3EZ330D5RR2 by Onsemi is a Zener diode with a nominal reference voltage of 330V and max power dissipation of 1W. It operates in temperatures ranging from -65 to 200 °C, making it suitable for various applications requiring precise voltage regulation. With a max dynamic impedance of 2200 ohm, this diode is ideal for use in electronic circuits where stable voltage levels are crucial.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Digiode

USA . 2,414 parts In-Stock

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Vyrian

USA . 824 parts In-Stock

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TANS Electronics

Latvia . 8,334 parts In-Stock

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Kulean Microsystems

USA . 3,472 parts In-Stock

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SupplyDigital Components

Austria . 3,271 parts In-Stock

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Corphita

USA . 2,031 parts In-Stock

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UHIMA Technologies

Türkiye . 982 parts In-Stock

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Native Components

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Northwest PG Solutions

USA . 337 parts In-Stock

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Problanco Electronics

Mexico . 276 parts In-Stock

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Corohmni

South Africa . 165 parts In-Stock

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Overview

Experience superior quality and reliability with the 3EZ330D5RR2 Zener Diode by Onsemi. As a trusted manufacturer in the industry, Onsemi delivers top-notch products that meet the highest standards. Ideal for a wide range of applications, this Zener diode offers unmatched value, benefits, and advantages to customers. Whether you're looking for precision voltage regulation or protection in your circuit design, the 3EZ330D5RR2 is the perfect choice. Trust Onsemi to provide you with the quality and performance you need for your projects.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/epoxy material provides good insulation properties, making the diode more durable and reliable.

Working Test Current: 2.3 mA

Low working test current ensures efficient operation and minimal power consumption.

Maximum Voltage Tolerance: 5%

High voltage tolerance of 5% ensures stable and accurate voltage regulation.

Maximum Operating Temperature: 200 °C

Wide operating temperature range of -65 to 200 °C allows for use in various environments.

Maximum Power Dissipation: 1 W

High power dissipation capability of 1W ensures the diode can handle high power loads without overheating.

Nominal Reference Voltage: 330 V

Nominal reference voltage of 330V allows for precise voltage regulation in circuits.

Diode Element Material: SILICON

Silicon diode element material provides good thermal stability and reliability.

Technical Specifications

Zener Diodes 3EZ330D5RR2 attributes and parameters. Explore more Zener Diodes devices from Onsemi

Specs

Case Connection:

ISOLATED

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Dynamic Impedance:

2200 ohm

JEDEC-95 Code:

DO-41

JESD-30 Code:

O-PALF-W2

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

200 Cel

Minimum Operating Temperature:

-65 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

LONG FORM

Polarity:

UNIDIRECTIONAL

Maximum Power Dissipation:

1 W

Qualification:

Not Qualified

Nominal Reference Voltage:

330 V

Sub-Category:

Voltage Reference Diodes

Surface Mount:

NO

Technology:

ZENER

Terminal Finish:

TIN LEAD

Terminal Form:

Terminal Position:

Maximum Voltage Tolerance:

5 %

Working Test Current:

2.3 mA

Trade Compliance

3EZ330D5RR2 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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