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3EZ39D5RL

Onsemi

3EZ39D5RL by Onsemi

The Onsemi 3EZ39D5RL is a Zener diode with a nominal reference voltage of 39V and max power dissipation of 1W. It operates in temperatures ranging from -65 to 200 °C and has a max voltage tolerance of 5%. Ideal for applications requiring stable voltage regulation in electronic circuits.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Vyrian

USA . 1,838 parts In-Stock

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Digiode

USA . 794 parts In-Stock

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Native Components

USA . 475 parts In-Stock

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$1.435

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$1.435

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Northwest PG Solutions

USA . 1,915 parts In-Stock

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$1.578

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Kulean Microsystems

USA . 7,073 parts In-Stock

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Problanco Electronics

Mexico . 6,927 parts In-Stock

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TANS Electronics

Latvia . 2,815 parts In-Stock

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UHIMA Technologies

Türkiye . 553 parts In-Stock

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SupplyDigital Components

Austria . 473 parts In-Stock

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Corohmni

South Africa . 375 parts In-Stock

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Corphita

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Overview

Enhance your electronic projects with the reliable 3EZ39D5RL Zener Diode by Onsemi. With a focus on quality and precision, Onsemi is known for producing top-notch components that exceed industry standards. Ideal for voltage regulation and protection applications, this Zener diode offers stable performance and durability. Trust in Onsemi to deliver exceptional value and benefits with their innovative products, providing you with the advantage you need to succeed in your projects. Choose the 3EZ39D5RL for superior results every time.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides good resistance to heat and moisture, making the diode durable and reliable in various operating conditions.

Working Test Current: 19 mA

The diode can handle a current of 19 mA during testing, indicating it can be used in low to moderate current applications without any issues.

Maximum Voltage Tolerance: 5%

With a low voltage tolerance of 5%, this diode ensures precise voltage regulation in circuits, making it ideal for applications requiring stable voltage outputs.

Maximum Operating Temperature: 200 °C

With a maximum operating temperature of 200 °C, this diode can withstand high temperatures, making it suitable for use in various industrial environments.

Nominal Reference Voltage: 39 V

The diode has a nominal reference voltage of 39V, providing a stable voltage reference for circuits requiring precise voltage control.

Maximum Power Dissipation: 1 W

With a maximum power dissipation of 1W, this diode can handle high power levels without getting damaged, making it suitable for high power applications.

Technical Specifications

Zener Diodes 3EZ39D5RL attributes and parameters. Explore more Zener Diodes devices from Onsemi

Specs

Case Connection:

ISOLATED

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Dynamic Impedance:

28 ohm

JEDEC-95 Code:

DO-41

JESD-30 Code:

O-PALF-W2

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

200 Cel

Minimum Operating Temperature:

-65 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

LONG FORM

Polarity:

UNIDIRECTIONAL

Maximum Power Dissipation:

1 W

Qualification:

Not Qualified

Nominal Reference Voltage:

39 V

Sub-Category:

Voltage Reference Diodes

Surface Mount:

NO

Technology:

ZENER

Terminal Finish:

TIN LEAD

Terminal Form:

Terminal Position:

Maximum Voltage Tolerance:

5 %

Working Test Current:

19 mA

Trade Compliance

3EZ39D5RL Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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