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3EZ36D5RL

Onsemi

3EZ36D5RL by Onsemi

3EZ36D5RL by Onsemi is a Zener diode with a nominal reference voltage of 36V and max power dissipation of 1W. It operates at a max temperature of 175 °C, making it suitable for applications requiring stable voltage regulation in harsh environments. With a working test current of 21mA and low dynamic impedance of 22 ohm, it is ideal for use in electronic circuits where precise voltage control is essential.

Median Price

$0.165

Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (Authorized)

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Rochester

USA . 5,900 parts In-Stock

1+ parts

-

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$0.159

1k+ parts

$0.132

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$0.117

5,900

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$0.159

$0.132

$0.117

DigiKey

USA . 5,900 parts In-Stock

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$0.200

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$0.200

Verical

USA . 5,900 parts In-Stock

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$0.165

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$0.165

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Digiode

USA . 1,919 parts In-Stock

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$0.124

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$0.124

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Vyrian

USA . 1,673 parts In-Stock

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$0.130

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Distributors (Availability)

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Andel Nordic

Denmark . 195 parts In-Stock

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$0.090

100+ parts

-

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$0.061

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$0.061

195

$0.090

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$0.061

$0.061

Corphita

USA . 1,762 parts In-Stock

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$0.117

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Component Stockers USA

USA . 7,799 parts In-Stock

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$0.130

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$0.130

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$0.110

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Corohmni

South Africa . 346 parts In-Stock

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$0.130

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346

$0.130

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QUARKTWIN TECHNOLOGY LTD

USA . 14,012 parts In-Stock

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Problanco Electronics

Mexico . 8,386 parts In-Stock

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Continental Prestige Electronics

USA . 5,900 parts In-Stock

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$0.111

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SupplyDigital Components

Austria . 5,885 parts In-Stock

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TANS Electronics

Latvia . 2,890 parts In-Stock

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UHIMA Technologies

Türkiye . 961 parts In-Stock

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Kulean Microsystems

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Northwest PG Solutions

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Native Components

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Overview

Experience superior quality and reliability with the 3EZ36D5RL Zener Diode by Onsemi. As a trusted manufacturer in the industry, Onsemi delivers top-notch products that meet the highest standards. This Zener Diode is perfect for a wide range of applications, offering customers unparalleled value and benefits. Trust in the exceptional performance and efficiency of the 3EZ36D5RL to power your projects with precision and reliability.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/epoxy material provides durability and protection for the diode, making it suitable for various applications.

Working Test Current: 21 mA

With a working test current of 21 mA, this Zener diode can efficiently regulate voltage in electronic circuits.

Maximum Operating Temperature: 175 °C

The high maximum operating temperature of 175 °C ensures the diode can withstand demanding environments.

Nominal Reference Voltage: 36 V

The nominal reference voltage of 36V allows for precise voltage regulation in electronic circuits.

Maximum Power Dissipation: 1 W

With a maximum power dissipation of 1W, this Zener diode can handle moderate power levels effectively.

Technical Specifications

Zener Diodes 3EZ36D5RL attributes and parameters. Explore more Zener Diodes devices from Onsemi

Specs

Case Connection:

ISOLATED

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Dynamic Impedance:

22 ohm

JEDEC-95 Code:

DO-41

JESD-30 Code:

O-PALF-W2

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

175 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

LONG FORM

Peak Reflow Temperature (C):

260

Polarity:

UNIDIRECTIONAL

Maximum Power Dissipation:

1 W

Qualification:

Not Qualified

Nominal Reference Voltage:

36 V

Sub-Category:

Voltage Reference Diodes

Surface Mount:

NO

Technology:

ZENER

Terminal Finish:

TIN

Terminal Form:

Terminal Position:

Maximum Voltage Tolerance:

5 %

Working Test Current:

21 mA

Trade Compliance

3EZ36D5RL Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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