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3EZ39D5G

Onsemi

3EZ39D5G by Onsemi

The Onsemi 3EZ39D5G is a Zener diode with a nominal reference voltage of 39V and max power dissipation of 1W. It operates at a max temperature of 175 °C, with a dynamic impedance of 28 ohm. Ideal for voltage regulation in electronic circuits requiring precise voltage control.

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Lifecycle Status

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1k+

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Vyrian

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Northwest PG Solutions

USA . 93 parts In-Stock

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AZTECH Wire

Italy . 525 parts In-Stock

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Component Stockers USA

USA . 365 parts In-Stock

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TANS Electronics

Latvia . 5,429 parts In-Stock

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SupplyDigital Components

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Problanco Electronics

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Kulean Microsystems

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Corphita

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UHIMA Technologies

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Native Components

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Overview

Unleash the power of precision with the Onsemi 3EZ39D5G Zener Diode. Manufactured by industry leader Onsemi, this single-configured diode offers impeccable quality and reliability. Ideal for a wide range of applications, this Zener diode provides unmatched value and benefits to customers. With a nominal reference voltage of 39V and maximum power dissipation of 1W, this diode ensures optimal performance in any circuit. Experience the advantage of superior technology with the 3EZ39D5G by Onsemi.

Feature Benefit Bullets

Config: SINGLE

SINGLE configuration makes it easy to use in circuits without the need for complex setups.

Working Test Current: 19 mA

The high test current ensures reliable performance in a variety of circuit applications.

Maximum Voltage Tolerance: 5 %

The low voltage tolerance ensures accurate voltage regulation in circuits.

Maximum Operating Temperature: 175 °C

With a high maximum operating temperature, this Zener diode can withstand temperature fluctuations in electronic devices.

Maximum Dynamic Impedance: 28 ohm

The low dynamic impedance ensures stable and consistent voltage regulation in circuits.

Terminal Finish: TIN

TIN terminal finish provides good solderability and ensures secure connections in circuits.

Maximum Power Dissipation: 1 W

With a high power dissipation rating, this Zener diode can handle high power loads without overheating.

Peak Reflow Temperature °C: 260

The high peak reflow temperature makes it suitable for reflow soldering processes in circuit manufacturing.

Diode Type: ZENER DIODE

Being a Zener diode, it is specifically designed for voltage regulation applications in circuits.

Nominal Reference Voltage: 39 V

The 39V nominal reference voltage makes it ideal for regulating voltage at this specific level in circuits.

Technical Specifications

Zener Diodes 3EZ39D5G attributes and parameters. Explore more Zener Diodes devices from Onsemi

Specs

Config:

SINGLE

Diode Type:

Maximum Dynamic Impedance:

28 ohm

JESD-609 Code:

e3

No. of Elements:

1

Maximum Operating Temperature:

175 Cel

Peak Reflow Temperature (C):

260

Maximum Power Dissipation:

1 W

Nominal Reference Voltage:

39 V

Sub-Category:

Voltage Reference Diodes

Surface Mount:

NO

Terminal Finish:

TIN

Maximum Voltage Tolerance:

5 %

Working Test Current:

19 mA

Trade Compliance

3EZ39D5G Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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