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SZ1SMB5917BT3G

Onsemi

SZ1SMB5917BT3G by Onsemi

SZ1SMB5917BT3G by Onsemi is a Zener diode with a 4.7V nominal reference voltage and 5% max voltage tolerance. It operates b/w -65 to 150 °C, has a max power dissipation of 0.55W, and features unidirectional polarity. Ideal for applications requiring precise voltage regulation in compact electronic devices.

Median Price

$0.776

Lifecycle Status

Suppliers In-Stock

8

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Adafruit Industries

USA . 100 parts In-Stock

1+ parts

$0.411

100+ parts

$0.378

1k+ parts

$0.354

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100

$0.411

$0.378

$0.354

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DigiKey

USA . 8,302 parts In-Stock

1+ parts

$1.140

100+ parts

$0.467

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$0.326

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8,302

$1.140

$0.467

$0.326

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Distributors (In-Stock)

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Nova Conductors

Japan . 50 parts In-Stock

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$0.354

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$0.354

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Digiode

USA . 135 parts In-Stock

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$0.390

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Chip Stock

USA . 51,268 parts In-Stock

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Flip Electronics

USA . 12,500 parts In-Stock

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LIBRA Elektronik GmbH

Germany . 1,680 parts In-Stock

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Vyrian

USA . 1,182 parts In-Stock

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Distributors (Availability)

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Aztec Data Supply Inc.

USA . 4,505 parts In-Stock

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$0.133

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4,505

$0.133

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Corohmni

South Africa . 149 parts In-Stock

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$0.340

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149

$0.340

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Decca Corp

Germany . 1,160 parts In-Stock

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$0.349

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$0.342

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$0.339

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1,160

$0.349

$0.342

$0.339

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Semicontronic

India . 1,084 parts In-Stock

1+ parts

$0.349

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$0.340

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$0.339

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1,084

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$0.339

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Ampacity Inc.

Singapore . 1,082 parts In-Stock

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$0.349

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1,082

$0.349

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Continental Prestige Electronics

USA . 4,820 parts In-Stock

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$0.354

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$0.347

4,820

$0.354

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$0.347

Argo Parts USA

USA . 4,772 parts In-Stock

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$0.354

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$0.343

4,772

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Corphita

USA . 699 parts In-Stock

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$0.370

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699

$0.370

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Advanced Electronics

New Zealand . 100 parts In-Stock

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$0.411

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$0.378

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$0.354

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100

$0.411

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RC Electronics

USA . 82,213 parts In-Stock

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$0.360

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$0.330

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$0.320

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Lixinc

USA . 18,157 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

USA . 13,068 parts In-Stock

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Perfect Parts

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Kulean Microsystems

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Authorized Procurement Solutions

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Problanco Electronics

Mexico . 2,791 parts In-Stock

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SupplyDigital Components

Austria . 2,724 parts In-Stock

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UHIMA Technologies

Türkiye . 347 parts In-Stock

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347

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Lucentia Tech

USA . 100 parts In-Stock

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$2.662

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$2.662

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$2.662

100

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$2.662

$2.662

TANS Electronics

Latvia . 68 parts In-Stock

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Netroflash

USA . 50 parts In-Stock

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$0.347

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$0.336

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$0.329

50

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$0.329

Overview

Elevate your electronic designs with the SZ1SMB5917BT3G by Onsemi, a top-quality Zener Diode designed for optimal performance and reliability. With Onsemi's reputation for excellence in semiconductor manufacturing, this diode offers unparalleled precision and efficiency in a compact, single configuration. Ideal for a wide range of applications, from voltage regulation to surge protection, this diode ensures consistent and stable performance even in demanding environments. Experience the value and benefits of Onsemi's SZ1SMB5917BT3G - the perfect choice for your next project.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection for the diode, making it suitable for various applications.

Config: SINGLE

Single configuration simplifies circuit design and installation, making it user-friendly.

Working Test Current: 79.8 mA

With a high working test current, this diode ensures reliable performance and consistent operation.

Surface Mount: YES

The surface mount feature allows for easy and efficient PCB assembly, saving time and effort.

Package Shape: RECTANGULAR

The rectangular shape enables space-saving placement on the PCB, ideal for compact designs.

No. of Terminals: 2

With two terminals, this diode is easy to install and connect within the circuit.

Package Style (Meter): SMALL OUTLINE

The small outline package style saves space and allows for efficient PCB layout.

Maximum Voltage Tolerance: 5%

A high voltage tolerance ensures stable operation within a wide range of voltage variations.

Maximum Operating Temperature: 150 °C

With a high operating temperature, this diode can withstand harsh environmental conditions.

Maximum Dynamic Impedance: 5 ohm

Low dynamic impedance ensures minimal loss and efficient signal processing.

Minimum Operating Temperature: -65 °C

The low minimum operating temperature allows for reliable performance in cold environments.

Terminal Finish: MATTE TIN

Matte tin finish provides corrosion resistance and ensures a secure electrical connection.

Terminal Position: DUAL

Dual terminal position simplifies installation and allows for flexibility in circuit design.

Maximum Power Dissipation: 0.55 W

High power dissipation capability makes this diode suitable for demanding applications.

Maximum Time At Peak Reflow Temperature (s): 30

The diode can withstand peak reflow temperatures for a specified duration, ensuring reliability during soldering.

Peak Reflow Temperature °C: 260

The diode can endure high peak reflow temperatures, making it suitable for lead-free soldering processes.

Reference Standard: AEC-Q101

Compliant with automotive industry standards, ensuring high reliability and performance.

Diode Type: ZENER DIODE

Zener diode type allows for precise voltage regulation and protection in the circuit.

Nominal Reference Voltage: 4.7 V

With a nominal reference voltage of 4.7V, this diode provides accurate voltage regulation.

Technology: ZENER

Zener technology ensures stable voltage regulation and protection against voltage spikes.

Terminal Form: L BEND

L bend terminal form facilitates easy installation and secure electrical connections.

Polarity: UNIDIRECTIONAL

Unidirectional polarity ensures that current flows in one direction, providing effective circuit protection.

Diode Element Material: SILICON

Silicon material offers high efficiency and reliability for the diode's performance.

Technical Specifications

Zener Diodes SZ1SMB5917BT3G attributes and parameters. Explore more Zener Diodes devices from Onsemi

Specs

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Dynamic Impedance:

5 ohm

JESD-30 Code:

R-PDSO-L2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-65 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity:

UNIDIRECTIONAL

Maximum Power Dissipation:

.55 W

Reference Standard:

AEC-Q101

Nominal Reference Voltage:

4.7 V

Sub-Category:

Voltage Reference Diodes

Surface Mount:

YES

Technology:

ZENER

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Maximum Voltage Tolerance:

5 %

Working Test Current:

79.8 mA

Trade Compliance

SZ1SMB5917BT3G Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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